公开(公告)号：US12057429B1

公开(公告)日：2024-08-06

申请号：US17356387

申请日：2021-06-23

申请人： HRL Laboratories, LLC

发明人： Aurelio Lopez ,  Peter Brewer ,  Partia Naghibi Mahmoudabadi ,  Erik Daniel ,  Tahir Hussain

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13144 ,  H01L2224/13466 ,  H01L2224/14051 ,  H01L2224/16057 ,  H01L2224/80201 ,  H01L2224/80986 ,  H01L2224/81053 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81379

摘要： A method for bonding two confronting electronic devices together wherein the two electronic devices are initially temporarily coupled together using a room temperature process with a plurality of knife-edge microstructures on at least a first one of the electronic devices engaging portions of the a second one of the electronic devices. The room temperature process involves applying a relatively low compressive force or pressure between the two electronic devices compared to the forces or pressures used in convention flip-chip bonding. The first one of the electronic devices and the second one of the electronic devices also have traditional contact pads that are spaced from each other by a standoff distance when the devices are initially coupled together using the room temperature process. This allows for inspection of the two electronic devices while they are initially temporarily coupled together. In need be, the two can be separated at this stage for re-work After passing inspection, a relatively higher compressive force or pressure is applied between the two electronic devices to cause the standoff distance to decrease to zero and for the contact pads confronting each other on the confronting two electronic devices to weld thereby permanently bonding the two electronic devices together.

公开(公告)号：US20230163094A1

公开(公告)日：2023-05-25

申请号：US17988469

申请日：2022-11-16

申请人： Samsung Electronics Co., Ltd.

发明人： Euisun Choi ,  Huijae Kim ,  Mingu Lee ,  Hyeonggyun Cheong ,  Yunpyo Hong

IPC分类号： H01L23/00

CPC分类号： H01L24/74 ,  H01L24/80 ,  H01L24/08 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/7592 ,  H01L2224/8018 ,  H01L2224/08221 ,  H01L2224/8318 ,  H01L2224/32221 ,  H01L2224/75304 ,  H01L2224/75312 ,  H01L2224/75745 ,  H01L2224/75824 ,  H01L2224/80093 ,  H01L2224/80201 ,  H01L2224/80894 ,  H01L2224/80908 ,  H01L2224/83093 ,  H01L2224/83201 ,  H01L2224/83908

摘要： A chip bonding apparatus, includes: a body; a substrate conveyor installed on the body to transfer a substrate; a bonding head conveyor disposed on an upper surface of the body; an alignment unit installed on the body and adjusting a position of the substrate and a position of a chip; and a bonding head installed in the bonding head conveyor and moved and attaching a chip therebelow, wherein the bonding head is provided with a chip bonding unit for attaching the chip in a lower end portion thereof, wherein the chip bonding unit, includes: a chip bonding unit body having an installation groove formed therein; a pushing module having one end portion inserted in the installation groove; and an attachment module having a deformable member deformed by the pushing module; wherein the deformable member is provided with a deformable portion which is deformed by being pressed by the pushing module, and having a bottom surface in contact and exerting a force on the chip to bond the chip to the substrate.

公开(公告)号：US20180158796A1

公开(公告)日：2018-06-07

申请号：US15822364

申请日：2017-11-27

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshitaka OTSUKA ,  Takashi NAKAMITSU ,  Yosuke OMORI ,  Kenji SUGAKAWA

IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L21/677 ,  H01L21/67 ,  B32B37/10 ,  B32B41/00 ,  B32B37/00

CPC分类号： H01L24/75 ,  B32B15/01 ,  B32B37/0046 ,  B32B37/10 ,  B32B41/00 ,  B32B2041/04 ,  B32B2457/14 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67742 ,  H01L21/68 ,  H01L21/6838 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/7515 ,  H01L2224/753 ,  H01L2224/75302 ,  H01L2224/75305 ,  H01L2224/7531 ,  H01L2224/7555 ,  H01L2224/7565 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75901 ,  H01L2224/75981 ,  H01L2224/75986 ,  H01L2224/80009 ,  H01L2224/80201 ,  H01L2224/80894 ,  H01L2224/80908 ,  H01L2224/83009 ,  H01L2224/83201 ,  H01L2224/83894 ,  H01L2224/83908

摘要： There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

公开(公告)号：US09991149B2

公开(公告)日：2018-06-05

申请号：US14933694

申请日：2015-11-05

申请人： Skorpios Technologies, Inc.

发明人： Damien Lambert ,  John Spann ,  Stephen Krasulick

IPC分类号： H01L21/683 ,  H01L21/027 ,  H01L23/00 ,  H01L21/762 ,  G02B6/42 ,  H01L21/20

CPC分类号： H01L21/6835 ,  G02B6/4201 ,  H01L21/0274 ,  H01L21/2007 ,  H01L21/683 ,  H01L21/76254 ,  H01L24/03 ,  H01L24/27 ,  H01L24/75 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0362 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/80201 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2225/06593 ,  H01L2924/01014 ,  H01L2924/1032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15738

摘要： A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

公开(公告)号：US20180040547A1

公开(公告)日：2018-02-08

申请号：US15231512

申请日：2016-08-08

申请人： QUALCOMM Incorporated

发明人： Chengjie Zuo ,  Changhan Hobie Yun ,  David Francis Berdy ,  Niranjan Sunil Mudakatte ,  Mario Francisco Velez ,  Shiqun Gu ,  Jonghae Kim

IPC分类号： H01L23/498 ,  H01L27/092 ,  H01L49/02

CPC分类号： H01L23/49827 ,  H01L21/76264 ,  H01L23/481 ,  H01L23/49833 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/32 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/117 ,  H01L25/50 ,  H01L27/092 ,  H01L28/10 ,  H01L28/40 ,  H01L2224/06181 ,  H01L2224/06182 ,  H01L2224/08146 ,  H01L2224/08237 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/80013 ,  H01L2224/80047 ,  H01L2224/80201 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/8285 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06572 ,  H01L2224/80001 ,  H01L2924/00014 ,  H01L21/76898

摘要： In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.

公开(公告)号：US20180019226A1

公开(公告)日：2018-01-18

申请号：US15644379

申请日：2017-07-07

申请人： TOKYO ELECTRON LIMITED

发明人： Masataka MATSUNAGA ,  Takahiro MASUNAGA ,  Yasutaka SOMA ,  Takashi KOGA ,  Shogo HARA ,  Masaaki UMITSUKI ,  Kazutoshi ISHIMARU ,  Fumio SAKATA

IPC分类号： H01L23/00 ,  B32B37/00 ,  B32B41/00

CPC分类号： H01L24/83 ,  B32B37/025 ,  B32B41/00 ,  B32B2457/14 ,  H01L24/74 ,  H01L24/75 ,  H01L24/80 ,  H01L24/94 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75724 ,  H01L2224/75725 ,  H01L2224/75743 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75901 ,  H01L2224/80009 ,  H01L2224/80013 ,  H01L2224/8002 ,  H01L2224/80123 ,  H01L2224/80129 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80201 ,  H01L2224/80894 ,  H01L2224/80908 ,  H01L2224/83031 ,  H01L2224/83122 ,  H01L2224/83896 ,  H01L2224/94 ,  H01L2224/80 ,  H01L2924/00012

摘要： A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.

公开(公告)号：US20160155724A1

公开(公告)日：2016-06-02

申请号：US14955124

申请日：2015-12-01

申请人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

发明人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03616 ,  H01L2224/0392 ,  H01L2224/04 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14515 ,  H01L2224/16146 ,  H01L2224/73251 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06596 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2924/00012 ,  H01L22/00 ,  H01L21/304 ,  H01L2221/68304 ,  H01L2221/68381 ,  H01L21/78

摘要： Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.

摘要翻译： 提供具有堆叠结构的半导体器件及其制造方法。 半导体器件包括至少一个单块，其包括堆叠在其上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片中的每一个包括半导体衬底，该半导体衬底包括通孔，半导体衬底的前表面上的电路层和设置在电路层中并且与通孔电连接的前衬垫 。 半导体基板的表面彼此面对。 电路层彼此直接接触，使得半导体芯片彼此结合。

公开(公告)号：US09209142B1

公开(公告)日：2015-12-08

申请号：US14562169

申请日：2014-12-05

申请人： Skorpios Technologies, Inc.

发明人： Damien Lambert ,  John Spann ,  Stephen Krasulick

IPC分类号： H01L21/67 ,  H01L23/00 ,  H01L21/762 ,  H01L21/683 ,  H01L21/20

CPC分类号： H01L21/6835 ,  G02B6/4201 ,  H01L21/0274 ,  H01L21/2007 ,  H01L21/683 ,  H01L21/76254 ,  H01L24/03 ,  H01L24/27 ,  H01L24/75 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0362 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/80201 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2225/06593 ,  H01L2924/01014 ,  H01L2924/1032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15738

摘要： A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

摘要翻译： 使用具有顺应性树脂的转印衬底将一个或多个芯片结合到目标晶片。 植入区域形成在转印衬底中。 转印衬底的一部分被蚀刻以形成提升器。 将合适的材料施加到转印基板上。 芯片被固定到柔性材料上，其中芯片被固定到提升管上方的柔性材料。 当芯片固定到顺应性材料时，芯片被结合到目标晶片。 从芯片上去除转印衬底和柔顺材料。 转印衬底对UV光是不透明的。

公开(公告)号：US20150311179A1

公开(公告)日：2015-10-29

申请号：US14795579

申请日：2015-07-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： CHENG-WEI CHENG ,  SHU-JEN HAN ,  MASAHARU KOBAYASHI ,  KO-TAO LEE ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU

IPC分类号： H01L23/00 ,  H01L21/02

CPC分类号： H01L24/89 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/92 ,  H01L29/78603 ,  H01L29/78681 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/05617 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/08245 ,  H01L2224/80004 ,  H01L2224/80006 ,  H01L2224/80052 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80379 ,  H01L2224/80801 ,  H01L2224/8083 ,  H01L2224/80894 ,  H01L2224/9202 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2224/03 ,  H01L2924/00

摘要： A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.

摘要翻译： 一种用于制造的器件和方法，包括提供包括第一衬底和形成在第一衬底上的第一金属层的第一衬底组件和包括形成在第二衬底上的第二衬底和第二金属层的第二衬底组件。 使用冷焊工艺将第一金属层接合到第二金属层，其中第一基板和第二基板中的一个包括用于形成晶体管器件的半导体沟道层。

公开(公告)号：US20140091370A1

公开(公告)日：2014-04-03

申请号：US13660497

申请日：2012-10-25

申请人： INTERNATIONAL BUSINESS MACHINES CORP

发明人： CHENG-WEI CHENG ,  SHU-JEN HAN ,  MASAHARU KOBAYASHI ,  KO-TAO LEE ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU

IPC分类号： H01L29/78 ,  H01L23/48

CPC分类号： H01L24/89 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/92 ,  H01L29/78603 ,  H01L29/78681 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/05617 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/08245 ,  H01L2224/80004 ,  H01L2224/80006 ,  H01L2224/80052 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80379 ,  H01L2224/80801 ,  H01L2224/8083 ,  H01L2224/80894 ,  H01L2224/9202 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2224/03 ,  H01L2924/00

摘要： A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.

摘要翻译： 一种用于制造的器件和方法，包括提供包括第一衬底和形成在第一衬底上的第一金属层的第一衬底组件和包括形成在第二衬底上的第二衬底和第二金属层的第二衬底组件。 使用冷焊工艺将第一金属层接合到第二金属层，其中第一基板和第二基板中的一个包括用于形成晶体管器件的半导体沟道层。