METHOD FOR PRODUCING GE-CORE BASED WAVEGUIDES

    公开(公告)号:US20190177836A1

    公开(公告)日:2019-06-13

    申请号:US16213402

    申请日:2018-12-07

    摘要: A method for producing a waveguide including a germanium-based core and a cladding is provided, the method including a step of “low temperature” depositing of a shell after forming the core by engraving, such that the deposition temperature is less than 780° C., followed by a step of “high temperature” depositing of a thick encapsulation layer. The shell and the encapsulation layer at least partially form the cladding of the waveguide. Optionally, a step of annealing under hydrogen at a “low temperature”, less than 750° C., precedes the deposition of the shell. These “low temperature” annealing and depositing steps advantageously make it possible to avoid a post-engraving alteration of the free surfaces of the core during the forming of the cladding which is less germanium-rich.

    Method for manufacturing a waveguide including a semi-conducting junction
    6.
    发明授权
    Method for manufacturing a waveguide including a semi-conducting junction 有权
    一种制造包括半导体结的波导的方法

    公开(公告)号:US09435951B2

    公开(公告)日:2016-09-06

    申请号:US14953773

    申请日:2015-11-30

    摘要: The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).

    摘要翻译: 本发明涉及一种制造包括半导体结(23)的波导(40)的方法。 该方法包括以下步骤:提供包括具有第一导电类型的第一部分(21)的半导体层(20)的支撑件(10) 保护第一部分; 在所述半导体层(20)的与所述第一部分(21,221)相邻的第二部分(22)中选择性地注入第二导电型掺杂剂。 第二部分(22,222)中的第二导电型掺杂剂的浓度大于第一部分(21,221)中的第一导电类型掺杂剂的浓度。 该方法还包括以下步骤:在第一部分(21,221)中扩散第二导电型掺杂剂以在第一部分(21,221)中形成半导体结(23,223),并部分地蚀刻半导体层 20,200),以在第一部分(21,221)中形成波导(40,240),使用第一部分(21,221)的保护,使得半导体结(23,223)被包括在 波导(40,240)。