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公开(公告)号:US12072282B2
公开(公告)日:2024-08-27
申请号:US17616908
申请日:2020-06-04
申请人: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , CPE LYON FORMATION CONTINUE ET RECHERCHE , ECOLE CENTRALE DE LYON , INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON , UNIVERSITE CLAUDE BERNARD LYON 1 , AVALUN , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人: Mathieu Dupoy , Taha Benyattou , Lotfi Berguiga , Jean-Marc Fedeli , Maryse Fournier , Nicolas Gaignebet , Cecile Jamois , Patrick Pouteau
CPC分类号: G01N21/31 , G01N2021/3137 , G01N2021/438 , G01N2021/5957
摘要: A method for analysing a sample uses a resonant support having a surface on which a plurality of separated photonic crystals extends. At least two crystals are configured to capture the same analyte. A resonance wavelength associated with each crystal varies with an amount of analyte in contact with the crystal. The wavelengths define a resonance spectral band between 200-1500 nm. The transmission/reflection of the light is maximum at an associated resonance wavelength. The method includes: illuminating the support in the resonance spectral band, the intensity of the lamination being variable in band; acquiring a measurement image using an image sensor, the image having different regions-of-interest each optically coupled to a photonic crystal; using a reference image representative of an image acquired by the image sensor, when the support is illuminated in the resonance spectral band in a reference configuration; and comparing the measurement image with the reference image.
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公开(公告)号:US11942328B2
公开(公告)日:2024-03-26
申请号:US17457362
申请日:2021-12-02
CPC分类号: H01L21/3065 , H01S5/1231 , H01S5/125 , H01S5/209 , H01S5/22 , H01S5/2202 , H01S5/3401 , H01S5/12 , H01S2301/176
摘要: A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.
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公开(公告)号:US11236417B2
公开(公告)日:2022-02-01
申请号:US16213402
申请日:2018-12-07
摘要: A method for producing a waveguide including a germanium-based core and a cladding is provided, the method including a step of “low temperature” depositing of a shell after forming the core by engraving, such that the deposition temperature is less than 780° C., followed by a step of “high temperature” depositing of a thick encapsulation layer. The shell and the encapsulation layer at least partially form the cladding of the waveguide. Optionally, a step of annealing under hydrogen at a “low temperature”, less than 750° C., precedes the deposition of the shell. These “low temperature” annealing and depositing steps advantageously make it possible to avoid a post-engraving alteration of the free surfaces of the core during the forming of the cladding which is less germanium-rich.
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公开(公告)号:US11885731B2
公开(公告)日:2024-01-30
申请号:US17448254
申请日:2021-09-21
申请人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , CPE LYON FORMATION CONTINUE ET RECHERCHE , ECOLE CENTRALE DE LYON , INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON , UNIVERSITE CLAUDE BERNARD LYON 1
IPC分类号: G01N15/14
CPC分类号: G01N15/1434
摘要: An optical particle detector including at least one channel intended to receive a fluid carrying at least one particle, and across which light rays are intended to pass such that the light rays are partially scattered by the at least one particle, a plurality of photodetectors capable of receiving said scattered light rays, wherein the detector includes at least one optical waveguide configured to collect, at least at one entrance of the waveguide, light rays that were not scattered by the at least one particle and having crossed the channel, and to reinject the unscattered light rays into the channel through at least one exit of the waveguide.
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公开(公告)号:US20190177836A1
公开(公告)日:2019-06-13
申请号:US16213402
申请日:2018-12-07
摘要: A method for producing a waveguide including a germanium-based core and a cladding is provided, the method including a step of “low temperature” depositing of a shell after forming the core by engraving, such that the deposition temperature is less than 780° C., followed by a step of “high temperature” depositing of a thick encapsulation layer. The shell and the encapsulation layer at least partially form the cladding of the waveguide. Optionally, a step of annealing under hydrogen at a “low temperature”, less than 750° C., precedes the deposition of the shell. These “low temperature” annealing and depositing steps advantageously make it possible to avoid a post-engraving alteration of the free surfaces of the core during the forming of the cladding which is less germanium-rich.
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6.
公开(公告)号:US09435951B2
公开(公告)日:2016-09-06
申请号:US14953773
申请日:2015-11-30
CPC分类号: G02B6/1347 , G02B6/00 , G02B6/134 , G02B6/1342 , G02B6/136 , G02F1/025 , G02F1/2257 , G02F2001/212 , H01L2223/6627 , H01L2223/6633
摘要: The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
摘要翻译: 本发明涉及一种制造包括半导体结(23)的波导(40)的方法。 该方法包括以下步骤:提供包括具有第一导电类型的第一部分(21)的半导体层(20)的支撑件(10) 保护第一部分; 在所述半导体层(20)的与所述第一部分(21,221)相邻的第二部分(22)中选择性地注入第二导电型掺杂剂。 第二部分(22,222)中的第二导电型掺杂剂的浓度大于第一部分(21,221)中的第一导电类型掺杂剂的浓度。 该方法还包括以下步骤:在第一部分(21,221)中扩散第二导电型掺杂剂以在第一部分(21,221)中形成半导体结(23,223),并部分地蚀刻半导体层 20,200),以在第一部分(21,221)中形成波导(40,240),使用第一部分(21,221)的保护,使得半导体结(23,223)被包括在 波导(40,240)。
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