公开(公告)号：US11581859B2

公开(公告)日：2023-02-14

申请号：US16913783

申请日：2020-06-26

Applicant: Cree, Inc.

Inventor： Alexander Komposch ,  Qianli Mu ,  Kun Wang ,  Eng Wah Woo

IPC: H03F3/187 ,  H03F3/195 ,  H03F1/56 ,  H03F3/24

Abstract: A radio frequency (RF) transistor amplifier package includes a submount, and first and second leads extending from a first side of the submount. The first and second leads are configured to provide RF signal connections to one or more transistor dies on a surface of the submount. At least one rivet is attached to the surface of the submount between the first and second leads on the first side. One or more corners of the first side of the submount may be free of rivets. Related devices and associated RF leads and non-RF leads are also discussed.

公开(公告)号：US11935879B2

公开(公告)日：2024-03-19

申请号：US17342925

申请日：2021-06-09

Applicant: CREE, INC

Inventor： Eng Wah Woo ,  Samantha Cheang ,  Kok Meng Kam ,  Marvin Mabell ,  Haedong Jang ,  Alexander Komposch

IPC: H01L25/16 ,  H01L21/48 ,  H01L23/00 ,  H01L23/047 ,  H01L23/66

CPC classification number: H01L25/165 ,  H01L21/4817 ,  H01L23/047 ,  H01L23/66 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2223/6672 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48175 ,  H01L2224/73265 ,  H01L2924/1033 ,  H01L2924/1205 ,  H01L2924/1207 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/1421

Abstract: A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

公开(公告)号：US20210408979A1

公开(公告)日：2021-12-30

申请号：US16913783

申请日：2020-06-26

Applicant: Cree, Inc.

Inventor： Alexander Komposch ,  Qianli Mu ,  Kun Wang ,  Eng Wah Woo

IPC: H03F3/195 ,  H03F3/24 ,  H03F1/56

Abstract: A radio frequency (RF) transistor amplifier package includes a submount, and first and second leads extending from a first side of the submount. The first and second leads are configured to provide RF signal connections to one or more transistor dies on a surface of the submount. At least one rivet is attached to the surface of the submount between the first and second leads on the first side. One or more corners of the first side of the submount may be free of rivets. Related devices and associated RF leads and non-RF leads are also discussed.