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公开(公告)号：US20150357014A1
公开(公告)日：2015-12-10
申请号：US14762264
申请日：2014-01-16
申请人： CROCUS TECHNOLOGY SA
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
摘要： MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
摘要翻译： MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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公开(公告)号：US09336846B2
公开(公告)日：2016-05-10
申请号：US14762264
申请日：2014-01-16
申请人： CROCUS Technology SA
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
摘要： MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
摘要翻译： MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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