公开(公告)号：US20170183540A1

公开(公告)日：2017-06-29

申请号：US15394090

申请日：2016-12-29

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Tina LI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

公开(公告)号：US20140349483A1

公开(公告)日：2014-11-27

申请号：US14289728

申请日：2014-05-29

Applicant: Cabot Microelectronics Corporation

Inventor： Tina LI ,  Kevin Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC: H01L21/306 ,  C09G1/02

CPC classification number: G09G1/02 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

公开(公告)号：US20170369742A1

公开(公告)日：2017-12-28

申请号：US15629487

申请日：2017-06-21

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Tina LI

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.

公开(公告)号：US20170210946A1

公开(公告)日：2017-07-27

申请号：US15414786

申请日：2017-01-25

Applicant: Cabot Microelectronics Corporation

Inventor： Viet LAM ,  Tina LI

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.

公开(公告)号：US20170121560A1

公开(公告)日：2017-05-04

申请号：US14924997

申请日：2015-10-28

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin DOCKERY ,  Helin HUANG ,  Lin FU ,  Tina LI

IPC: C09G1/02 ,  B24B37/24 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.