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1.发明申请公开(公告)号：US20160168421A1
公开(公告)日：2016-06-16
申请号：US14568311
申请日：2014-12-12
Applicant: Cabot Microelectronics Corporation
Inventor： Sudeep PALLIKKARA KUTTIATOOR , Kevin DOCKERY , Prativa PANDEY , Renhe JIA
IPC: C09G1/02
CPC classification number: C09G1/02 , C03C15/00 , C23F1/16 , H01L21/31053 , H01L21/31111 , H01L21/76224
Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Abstract translation: 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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公开(公告)号：US20170121561A1
公开(公告)日：2017-05-04
申请号：US14925054
申请日：2015-10-28
Applicant: Cabot Microelectronics Corporation
Inventor： Kevin DOCKERY , Helin HUANG , Lin FU
Abstract: Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.
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公开(公告)号：US20170121560A1
公开(公告)日：2017-05-04
申请号：US14924997
申请日：2015-10-28
Applicant: Cabot Microelectronics Corporation
Inventor： Kevin DOCKERY , Helin HUANG , Lin FU , Tina LI
Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
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