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    COMPOSITION FOR TUNGSTEN CMP
    1.
    发明申请
    COMPOSITION FOR TUNGSTEN CMP 有权
    TUNGSTEN CMP的组合物

    公开(公告)号：US20150259572A1

    公开(公告)日：2015-09-17

    申请号：US14203621

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    POLYURETHANE CMP PADS HAVING A HIGH MODULUS RATIO
    2.
    发明申请
    POLYURETHANE CMP PADS HAVING A HIGH MODULUS RATIO 审中-公开

    公开(公告)号：US20170087688A1

    公开(公告)日：2017-03-30

    申请号：US15273855

    申请日：2016-09-23

    Applicant: Cabot Microelectronics Corporation

    Inventor： Lin FU ,  Rachel Ma ,  Nathan Speer ,  Chen-Chih Tsai ,  Kathryn Bergman

    IPC: B24B37/24 ,  B24B37/04 ,  B24B37/22

    Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.

    COMPOSITION FOR TUNGSTEN CMP
    4.
    发明申请
    COMPOSITION FOR TUNGSTEN CMP 有权
    TUNGSTEN CMP的组合物

    公开(公告)号：US20150259573A1

    公开(公告)日：2015-09-17

    申请号：US14203647

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

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