TUNGSTEN BULK POLISHING METHOD WITH IMPROVED TOPOGRAPHY

    公开(公告)号:US20190211228A1

    公开(公告)日:2019-07-11

    申请号:US15866008

    申请日:2018-01-09

    IPC分类号: C09G1/02 C09K3/14 H01L21/321

    摘要: The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer on a surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −20 mV to about −70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.