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公开(公告)号：US10647887B2
公开(公告)日：2020-05-12
申请号：US15864720
申请日：2018-01-08
Applicant: Cabot Microelectronics Corporation
Inventor： Kevin P. Dockery , Pankaj K. Singh , Steven Grumbine , Kim Long
Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.
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公开(公告)号：US20190211228A1
公开(公告)日：2019-07-11
申请号：US15866008
申请日：2018-01-09
Applicant: Cabot Microelectronics Corporation
Inventor： William J. Ward , Matthew E. Carnes , Ji Cui , Kim Long
IPC: C09G1/02 , C09K3/14 , H01L21/321
CPC classification number: C09G1/02 , C09K3/1409 , C09K3/1436 , H01L21/3212
Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer on a surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −20 mV to about −70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.
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