公开(公告)号：US11043151B2

公开(公告)日：2021-06-22

申请号：US15723886

申请日：2017-10-03

Applicant: Cabot Microelectronics Corporation

Inventor： Ji Cui ,  Helin Huang ,  Kevin P. Dockery ,  Pankaj K. Singh ,  Hung-Tsung Huang ,  Chih-Hsien Chien

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105 ,  G09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

公开(公告)号：US11597854B2

公开(公告)日：2023-03-07

申请号：US16513404

申请日：2019-07-16

Applicant: Cabot Microelectronics Corporation

Inventor： William J. Ward ,  Matthew E. Carnes ,  Ji Cui ,  Helin Huang

IPC: C09G1/02 ,  C08K3/22 ,  C09K13/00 ,  C23F1/26 ,  H01L21/306 ,  C23F3/06 ,  C08L39/00 ,  C08K9/00 ,  C08K3/36 ,  C08K3/28 ,  H01L21/321

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

公开(公告)号：US10522341B2

公开(公告)日：2019-12-31

申请号：US15825305

申请日：2017-11-29

Applicant: Cabot Microelectronics Corporation

Inventor： Helin Huang ,  Ji Cui

IPC: C09G1/06 ,  H01L21/02 ,  H01L21/321 ,  C11D3/22 ,  C11D3/20 ,  C11D17/00 ,  C11D3/48 ,  C11D3/00 ,  C11D11/00 ,  C11D3/43

Abstract: Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

公开(公告)号：US09631122B1

公开(公告)日：2017-04-25

申请号：US14925054

申请日：2015-10-28

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin Dockery ,  Helin Huang ,  Lin Fu

IPC: C09G1/02 ,  C23F3/04 ,  B24B37/24

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.

公开(公告)号：US10066126B2

公开(公告)日：2018-09-04

申请号：US14988891

申请日：2016-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  C09K13/06 ,  C09G1/04 ,  H01L21/321

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

公开(公告)号：US09771496B2

公开(公告)日：2017-09-26

申请号：US14924997

申请日：2015-10-28

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin Dockery ,  Helin Huang ,  Lin Fu ,  Tina Li

IPC: C09G1/02 ,  B24B37/24 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

公开(公告)号：US20170190936A1

公开(公告)日：2017-07-06

申请号：US14988891

申请日：2016-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/3212

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.