Abstract:
Disclosed embodiments perform readout at a high rate without being affected by transition of pixel transistors. A solid state imaging device of an embodiment has a pixel having a photoelectric conversion unit that generates charges, an amplification transistor including an input node that receives a signal based on the charges generated in the photoelectric conversion unit, and a reset transistor that resets the potential of the input node of the amplification transistor; a signal processing circuit that reads out a signal from the pixel via a signal line; and a switch provided between the signal line and an input node of the signal processing circuit, and a signal value of a control signal applied to the gate of the reset transistor changes while the switch is in the off-state.
Abstract:
An imaging apparatus includes first and second substrates respectively including first pixels and second pixels arranged thereon. The first pixels each includes a first photoelectric conversion unit and a first transistor configured to output a first signal based on a charge generated in the first photoelectric conversion unit. The second pixels each includes a second photoelectric conversion unit and a second transistor configured to output a second signal based on a charge generated in the second photoelectric conversion unit. The first and second substrates are stacked via an insulation film.
Abstract:
A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.
Abstract:
It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.
Abstract:
The imaging apparatus has a plurality of pixels each of which has a plurality of photoelectric conversion units; generates a plurality of first combined signals obtained by combining signals based on electric charges of photoelectric conversion units in one side with each other, and a plurality of second signals obtained by combining signals based on electric charges of the plurality of photoelectric conversion units with each other; and outputs a part of the first combined signals out of the plurality of first combined signals.
Abstract:
An image sensor includes a pixel unit having first and second photoelectric converters, an amplifier provided commonly for the first and second photoelectric converters, first and second transfer transistors configured to respectively transfer charges generated in the first and second electric converters to an input portion of the amplifier. The signal read out by the readout portion includes a first optical signal read out in a state in which charges are transferred from the first photoelectric converter to the input portion by the first transfer transistor, and a second optical signal read out, after the readout of the first optical signal, in a state in which charges are transferred from the second photoelectric converter to the input portion by the second transfer transistor.
Abstract:
A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.
Abstract:
A solid-state imaging apparatus has a plurality of pixels and an amplifying unit (300) for amplifying signals of the plurality of pixels. The plurality of pixels have imaging pixels and focus detecting pixels. The amplifying unit amplifies the signals of the imaging pixels at a first gain and amplifies the signals of the focus detecting pixels at a second gain different from the first gain.
Abstract:
A photoelectric conversion apparatus includes a photoelectric conversion region provided with a plurality of photoelectric conversion units, a signal processing unit configured to process an output signal from the plurality of photoelectric conversion units, and a processing unit configured to perform processing based on a learned model on data processed by the signal processing unit. The photoelectric conversion apparatus also includes a first pad connected to the processing unit and a second pad connected to the signal processing unit.
Abstract:
The imaging apparatus has a plurality of pixels each of which has a plurality of photoelectric conversion units; generates a plurality of first combined signals obtained by combining signals based on electric charges of photoelectric conversion units in one side with each other, and a plurality of second signals obtained by combining signals based on electric charges of the plurality of photoelectric conversion units with each other; and outputs a part of the first combined signals out of the plurality of first combined signals.