Abstract:
Disclosed embodiments perform readout at a high rate without being affected by transition of pixel transistors. A solid state imaging device of an embodiment has a pixel having a photoelectric conversion unit that generates charges, an amplification transistor including an input node that receives a signal based on the charges generated in the photoelectric conversion unit, and a reset transistor that resets the potential of the input node of the amplification transistor; a signal processing circuit that reads out a signal from the pixel via a signal line; and a switch provided between the signal line and an input node of the signal processing circuit, and a signal value of a control signal applied to the gate of the reset transistor changes while the switch is in the off-state.
Abstract:
A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.
Abstract:
A solid-state imaging device includes pixels forming pixel rows, and a scanning circuit that performs a reset operation of a photoelectric converter and a readout operation of a pixel signal based on charges generated by the photoelectric converter including charge transfer from the photoelectric converter to the holding unit. The pixel rows include imaging rows and focus detection rows. The scanning circuit performs an image capture scan of the imaging rows and a focus detection scan of the focus detection rows, independently, such that signals of the focus detection rows are output after signals from the imaging rows. The scanning circuit performs the focus detection scan such that the reset operation on the focus detection row does not overlap with a charge transfer period on an imaging row belonging to a unit pixel row neighboring a unit pixel row to which a focus detection row under the reset operation belongs.
Abstract:
A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.
Abstract:
An image pickup apparatus of the present invention includes a clipping circuit that clips the voltage of an input node of an amplifying unit in a pixel. The clipping circuit can operate at least in a time period in which a charge is transferred from a photoelectric conversion unit to the input node of the amplifying unit, and can switch among multiple clipping voltages.
Abstract:
A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.
Abstract:
A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.
Abstract:
A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.
Abstract:
A method for manufacturing an image pickup apparatus in which a second semiconductor region of first conductive type which becomes a well contact region is disposed adjacent to a first semiconductor region via an element isolation region in a pixel which has a well contact region among a plurality of pixels. A first mask which has openings in a region which becomes a first semiconductor region, an element isolation region disposed between the region which becomes the first semiconductor region and a region which becomes a second semiconductor region, and a region which becomes the second semiconductor region is disposed, and the first semiconductor region is formed in the region which becomes the first semiconductor region by conducting ion implantation of second conductive type at an oblique angle to a normal line of a principal surface using the first mask.
Abstract:
An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array.