摘要:
A process and novel intermediates for making compounds of the formula I: wherein: R2 is selected from the group consisting of H, F, Cl, C1-4 alkyl, C3-4 cycloalkyl and CF3; R4 is H or Me; R5 is H, Me or Et, with the proviso that R4 and R5 are not both Me, and if R4 is Me then R5 cannot be Et; R11 is Me, Et, cyclopropyl, propyl, isopropyl, or cyclobutyl; and Q is selected from the group consisting of:
摘要翻译:制备式I化合物的方法和新型中间体:其中:R 2选自H,F,Cl,C 1-4烷基,C 3-4环烷基和CF 3; R 4是H 或Me; R 5是H,Me或Et,条件是R 4和R 5不都是Me,如果R 4是Me,那么R 5不能是Et; R 环丙基,丙基,异丙基或环丁基; 且Q选自:
摘要:
A touch screen display apparatus including a sensor unit to sense and to process light signals and a pixel unit to drive pixels according to the light signal processing performed by the sensor unit. The touch screen display apparatus includes a substrate; a plurality of pixel units disposed on the substrate, wherein each of the pixel units includes a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; and a plurality of sensor units disposed on the substrate, wherein each of the sensor units includes a sensor first electrode, a sensor second electrode, and an organic light receiving layer interposed between the sensor first electrode and the sensor second electrode.
摘要:
A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.
摘要:
An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.
摘要:
A touch screen display apparatus for easily sensing the touch of a user. The touch screen display apparatus includes: a substrate; a display unit formed on the substrate; and a touch panel disposed to face the display unit, where the touch panel comprises a sealing substrate, a first electrode formed on the sealing substrate, a second electrode spaced apart from the first electrode, and a light receiving unit comprising an organic material interposed between the first electrode and the second electrode.
摘要:
An apparatus is provided for performing a scroll function in a portable terminal, in which a touch screen displays a list divided into a plurality of sections, a memory stores a scroll function established for each of the plurality of sections, and a controller locates a focus on a particular item by performing a scroll function established for a particular section, when the section among the plurality of sections is touched and dragged.
摘要:
A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.
摘要:
Provided is a semiconductor device that can include a lower interconnection on a substrate and at least one upper interconnection disposed on the lower interconnection. At least one gate structure can be disposed between the upper interconnection and the lower interconnection, where the gate structure can include a plurality of gate lines that are vertically stacked so that each of the gate lines has a wiring portion that is substantially parallel to an upper surface of the substrate and a contact portion that extends from the wiring portion along a direction penetrating an upper surface of the substrate. At least one semiconductor pattern can connect the upper and lower interconnections.
摘要:
Disclosed herein is a pair of dry type patches for teeth whitening, having a patch for upper teeth and a patch for lower teeth, in which the patch for upper teeth has a shape different from the patch for lower teeth, and each patch has a controlled width and shape such that the contact area of each patch with gums is minimized. In the patch for upper teeth, a central portion covering right and left upper central incisors is widest. In the patch for lower teeth, either portion covering right and left lower canine teeth is widest. Since the dry type patches covers all the portions of the teeth while minimizing the contact area with gums, no or little irritation is caused and wearability is excellent.
摘要:
An integrated circuit device includes a transistor array having a vertical stack of independently controllable gate electrodes therein. A first semiconductor channel region is provided, which extends on a first sidewall of the vertical stack of independently controllable gate electrodes. A first electrically insulating layer is also provided, which extends between the first semiconductor channel region and the first sidewall of the vertical stack of independently controllable gate electrodes. Source and drain regions are provided, which are electrically coupled to first and second ends of the first semiconductor channel region, respectively.