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    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY
    2.
    发明申请
    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY 有权
    投影目标的微观算法

    公开(公告)号：US20140104588A1

    公开(公告)日：2014-04-17

    申请号：US14104211

    申请日：2013-12-12

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Johannes Zellner ,  Hans-Juergen Mann ,  Martin Endres

    IPC: G03F7/20

    CPC classification number: G03F7/70316 ,  G02B17/0663 ,  G03F7/702 ,  G03F7/70233

    Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

    Abstract translation: 用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。 投影物镜包括至少六个反射镜，其中至少一个反射镜具有自由形反射表面。 投影物镜的总长（T）与物体像偏移（dOIS）之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。 投影物镜可以具有多个反射镜，其中总长度（T）和物体图像偏移（dOIS）之间的比率小于2。

    EUV collector for use in an EUV projection exposure apparatus
    3.
    发明授权
    EUV collector for use in an EUV projection exposure apparatus 有权

    公开(公告)号：US10578972B2

    公开(公告)日：2020-03-03

    申请号：US16136453

    申请日：2018-09-20

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Holger Kierey ,  Johannes Zellner

    IPC: G03F7/00 ,  G02B5/08 ,  G02B5/18 ,  G03F7/20 ,  G02B19/00

    Abstract: An EUV collector serves for use in an EUV projection exposure apparatus. The collector guides EUV used light emitted by a plasma source region. An overall impingement surface of the collector is impinged upon by radiation emitted by the plasma source region. A used light portion of the overall impingement surface guides the EUV used light. An extraneous light portion of the overall impingement surface is impinged upon by extraneous light radiation, the wavelength of which differs from that of the used light. The used light portion and the extraneous light portion are not congruent. This EUV collector has increased efficiency can involve reduced production costs.

    Projection objective of a microlithographic projection exposure apparatus
    4.
    发明授权
    Projection objective of a microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置的投影目标

    公开(公告)号：US09372411B2

    公开(公告)日：2016-06-21

    申请号：US14199932

    申请日：2014-03-06

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Johannes Zellner ,  Boris Bittner ,  Norbert Wabra ,  Martin von Hodenberg ,  Sonja Schneider ,  Ricarda Schoemer ,  Arne Schob ,  Guenter Rudolph ,  Alexander Gratzke ,  Bryce Anton Moffat

    IPC: G03B27/52 ,  G03B27/54 ,  G03F7/20 ,  H01S5/00 ,  H01S5/40

    CPC classification number: G03F7/70308 ,  G03F7/70891 ,  H01S5/005 ,  H01S5/0064 ,  H01S5/4025

    Abstract: A projection objective of a microlithographic projection exposure apparatus includes a wavefront correction device including a refractive optical element that has two opposite optical surfaces, through which projection light passes, and a circumferential rim surface extending between the two optical surfaces. A first and a second optical system are configured to direct first and second heating light to different portions of the rim surface such that at least a portion of the first and second heating light enters the refractive optical element. A temperature distribution caused by a partial absorption of the heating light results in a refractive index distribution inside the refractive optical element that corrects a wavefront error. At least the first optical system includes a focusing optical element that focuses the first heating light in a focal area such that the first heating light emerging from the focal area impinges on the rim surface.

    Abstract translation: 微光刻投影曝光装置的投影物镜包括具有折射光学元件的波前校正装置，所述折射光学元件具有投影光通过的两个相对的光学表面和在两个光学表面之间延伸的圆周边缘表面。 第一和第二光学系统被配置为将第一和第二加热光引导到边缘表面的不同部分，使得第一和第二加热光的至少一部分进入折射光学元件。 由加热光的部分吸收引起的温度分布导致折射光学元件内的折射率分布，其校正波前误差。 至少第一光学系统包括聚焦光学元件，其将第一加热光聚焦在焦点区域中，使得从焦点区域射出的第一加热光照射在边缘表面上。

    Projection objective for microlithography
    6.
    发明授权
    Projection objective for microlithography 有权
    微光刻的投影目标

    公开(公告)号：US09304408B2

    公开(公告)日：2016-04-05

    申请号：US14104211

    申请日：2013-12-12

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Johannes Zellner ,  Hans-Juergen Mann ,  Martin Endres

    IPC: G03B27/32 ,  G03B27/54 ,  G03F7/20 ,  G02B17/06

    CPC classification number: G03F7/70316 ,  G02B17/0663 ,  G03F7/702 ,  G03F7/70233

    Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

    Abstract translation: 用于微光刻的投影物镜用于将物平面中的物体场成像到图像平面中的图像场中。 投影物镜包括至少六个反射镜，其中至少一个反射镜具有自由形反射表面。 投影物镜的总长（T）与物体像偏移（dOIS）之间的比例可以小于12.像平面是物平面下游的投影物镜的第一场平面。 投影物镜可以具有多个反射镜，其中总长度（T）和物体图像偏移（dOIS）之间的比率小于2。

    PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    8.
    发明申请
    PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置的投影目标

    公开(公告)号：US20140185024A1

    公开(公告)日：2014-07-03

    申请号：US14199932

    申请日：2014-03-06

    Applicant: CARL ZEISS SMT GMBH

    Inventor： Johannes Zellner ,  Boris Bittner ,  Norbert Wabra ,  Martin von Hodenberg ,  Sonja Schneider ,  Ricarda Schneider ,  Arne Schob ,  Guenter Rudolph ,  Alexander Gratzke ,  Bryce Anton Moffat

    IPC: G03F7/20

    CPC classification number: G03F7/70308 ,  G03F7/70891 ,  H01S5/005 ,  H01S5/0064 ,  H01S5/4025

    Abstract: A projection objective of a microlithographic projection exposure apparatus comprises a wavefront correction device comprising a refractive optical element that has two opposite optical surfaces, through which projection light passes, and a circumferential rim surface extending between the two optical surfaces. A first and a second optical system are configured to direct first and second heating light to different portions of the rim surface such that at least a portion of the first and second heating light enters the refractive optical element. A temperature distribution caused by a partial absorption of the heating light results in a refractive index distribution inside the refractive optical element that corrects a wavefront error. At least the first optical system comprises a focusing optical element that focuses the first heating light in a focal area such that the first heating light emerging from the focal area impinges on the rim surface.

    Abstract translation: 微光刻投影曝光装置的投影物镜包括波前校正装置，其包括折射光学元件，所述折射光学元件具有两个相反的光学表面，投影光通过该光学表面，以及在两个光学表面之间延伸的圆周边缘表面。 第一和第二光学系统被配置为将第一和第二加热光引导到边缘表面的不同部分，使得第一和第二加热光的至少一部分进入折射光学元件。 由加热光的部分吸收引起的温度分布导致折射光学元件内的折射率分布，其校正波前误差。 至少第一光学系统包括聚焦光学元件，其将第一加热光聚焦在焦点区域中，使得从聚焦区域射出的第一加热光照射在边缘表面上。

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