摘要:
An improved microelectromechanical device, such as a thermal ink jet die or printhead, is formed by the alignment of two planar substrates bonded together by an intermediate thick film layer of patterned polymeric material, such as polyimide. The improved device has a fully cured, patterned thick film layer which is planarized by chemical-mechanical polishing-to improve the bonding strength between the substrates. The planarization removes topographical formations generated during the deposition of the thick film layer and/or during the patterning of the recesses therein.
摘要:
An improved ink jet printhead is disclosed of the type having a plurality of parallel ink flow channels which terminate with an ink droplet emitting nozzle, a heating element with a cavitational protective layer thereover located in each channel, and MOS electronic circuitry monolithically integrated within the printhead for applying electrical pulses to the heating elements. The pulsed heating elements produce bubbles momentarily on the protective layer of the heating elements which expel ink droplets from the nozzles. The improvement is obtained by providing multi-layer ionic passivation of the MOS electronic circuitry which is exposable to the ink. This is accomplished through the deposition of a multi-layered, thin film insulative coating thereon consisting of a first layer of doped or undoped silicon dioxide having a thickness of 200 .ANG. to 2 .mu.m followed by a second layer of plasma nitride having a thickness of 1000 .ANG. to 3 .mu.m. The silicon nitride is etched from the protective layers of the heating elements and electrical contact pads for external connection to electrical power so that the first layer of silicon oxide is exposed, followed by etching of the silicon oxide to remove it from the protective layer and contact pads. Thus, the MOS circuitry is protected from mobile ions in the ink while the cost effective fabrication of a printhead is maintained. In an alternate embodiment, the multi-layered ionic passivation comprises three thin film layers comprising polyimide interfacing with the ink, followed by silicon nitride, and doped or undoped silicon dioxide directly interfacing with the metallization.
摘要:
An ink-jet printhead fabrication technique enables capillary channels for liquid ink to be formed with square or rectangular cross-sections. A sacrificial layer is placed over the main surface of a silicon chip, the sacrificial layer being patterned in the form of the void formed by the desired ink channels. A permanent layer, comprising permanent material, is applied over the sacrificial layer, and, after polishing the two layers to form a uniform surface, the sacrificial layer is removed. Preferred materials for the sacrificial layer include polyimide while preferred materials for the permanent layer include polyarylene ether, although a variety of material combinations are possible.
摘要:
The new heater element design has a pit layer which protects the overglaze passivation layer, PSG step region, portions of the Ta layer and dielectric isolation layer and junctions or regions susceptible to the cavitational pressures. Further, the inner walls of the pit layer define the effective heater area and the dopant lines define the actual heater area. In alternative embodiments, the dopant lines define the actual and effective heater areas, and an inner wall and a dopant line define the actual and effective heater areas. Further, when the new heater element designs are incorporated into printheads having full pit channel geometry and open pit channel geometry, the operating lifetime of the printhead is extended because the added protection of the pit layer prevents: 1) passivation damage and cavitational damages of the heater elements; and 2) degradation of heater robustness, hot spot formations and heater failures well into the 109 pulse range. The printhead incorporating the new heater element design can be incorporated into drop-on-demand printing systems of a carriage type or a full width type.
摘要:
A drive transistor for a high resolution ink jet printhead having a pocket implant in the gate region of the device. The pocket implant enables a reduced source to drain spacing without loss of breakdown voltage. Accordingly, the size of the transistor may be reduced. Alternatively, this device is suitable for addressing 1200 spi resolution printheads. In one embodiment, the pocket implant extends about 1 .mu.m beyond the gate region towards the drain region. Both embodiments produce a graded drift region.
摘要:
A high voltage MOS transistor, for use in a thermal ink jet printhead, is fabricated with a single, uniformly thick layer of polysilicon that serves as a field plate over the drift region and a gate over the channel region. The fabrication of the drift region and associated drift oxide is performed in a sequence independent of the device channel stop and field oxide fabrication, allowing the drift region to be optimized by varying the thickness of the drift oxide. Using a field plate to increase the breakdown voltage of the device by reducing the concentration of the electric field, the device transconductance is increased by increasing the doping of the drift region without an attendant decrease in breakdown voltage.
摘要:
A fluid ejector includes a fluid channel having a resistive heater and terminating in a nozzle, a common bus formed transverse to the fluid channel and between the resistive heater and the nozzle, a connection line laterally adjacent to the fluid channel, and a connection structure for electrically connecting the common bus with the resistive heater and the connection line, the connection structure including a first set of one or more layers for electrical connection and a second set of one or more layers for covering the common bus and connection line. The first set of one or more layers includes a doped polysilicon layer on or overlaid by an optional tantalum-silicide layer. The second set of one or more layers includes a nitride layer on or overlaid by a tantalum layer.
摘要:
A thermal jet ink printing system is provided with an inproved printhead. The printhead is formed by monolithic integration of MOS transistors switches onto the same silicon substrate containing the resistive elements. In a preferred embodiment, the transistor switches and resistive elements are formed from a single layer of polysilicon with the resistive element formed on a thermally grown field oxide layer having a thickness ranging from about one to four microns. The integrated circuit chips are formed by MOS technology, are thermally stable and can be operated at higher voltages.
摘要:
An electrostatic discharge protection device for a connector associated with an integrated circuit chip, particularly one associated with a thermal ink-jet printhead. A MOS field effect device extends along at least one edge of the connector on the chip. A bipolar transistor, parasitic to the field effect device, conducts current from the connector to ground in response to a voltage between the connector and ground in excess of a predetermined threshold. A zone of a predetermined electrical resistance is operatively disposed between the bipolar transistor and ground. The zone may substantially encircle the bonding pad of the connector to evenly distribute local incidences of high voltage. The invention enables integrated circuits to pass ESD requirements of office products, which is 15 kV by Human Body Model testing.
摘要:
A thermal ink jet printhead has an outer, metallic hydrophobic coating on its front face to repel ink. Eliminating the accumulation of ink at the nozzles of the printhead allows an ink droplet to be accurately ejected and ensures the directionality of the ejected ink droplet onto the printing medium. The outer coating is formed of a metal selected from the group of noble metals, including gold, platinum, palladium, silver, rhodium and ruthenium. An adhesion layer is preferably deposited between the front face of the printhead and the outer ink-repellent coating. The metallic coating is preferably applied by electroplating, wet electroless plating, evaporation, sputtering, ion plating, CVD or plasma CVD.