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    Processing apparatus
    1.
    发明授权
    Processing apparatus 失效
    处理装置

    公开(公告)号：US4872938A

    公开(公告)日：1989-10-10

    申请号：US188128

    申请日：1988-04-25

    申请人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    发明人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    IPC分类号： H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/67115 ,  H01L21/67751 ,  H01L21/67796

    摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.

    摘要翻译： 一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后， 可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。 在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。 另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。 当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。

    Wafer processing apparatus having independently controllable energy sources
    5.
    发明授权
    Wafer processing apparatus having independently controllable energy sources 失效
    具有独立可控能量源的晶片处理装置

    公开(公告)号：US5138973A

    公开(公告)日：1992-08-18

    申请号：US282917

    申请日：1988-12-05

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation
    6.
    发明授权
    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
    使用远程产生的等离子体和原位等离子体与UV照射的处理方法

    公开(公告)号：US5248636A

    公开(公告)日：1993-09-28

    申请号：US892460

    申请日：1992-06-02

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

    Automated single slice powered load lock plasma reactor
    8.
    发明授权
    Automated single slice powered load lock plasma reactor 失效
    自动单片动力装载等离子体反应堆

    公开(公告)号：US4657620A

    公开(公告)日：1987-04-14

    申请号：US663905

    申请日：1984-10-22

    申请人： Cecil J. Davis ,  John E. Spencer ,  Dan T. Hockersmith ,  Randall C. Hildenbrand ,  Frederick W. Brown ,  Stanford P. Kohan

    发明人： Cecil J. Davis ,  John E. Spencer ,  Dan T. Hockersmith ,  Randall C. Hildenbrand ,  Frederick W. Brown ,  Stanford P. Kohan

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

    CPC分类号： H01J37/32

    摘要： A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.

    摘要翻译： 用于制造半导体器件的等离子体反应器具有动力负载锁和主处理室，其中可以在主蚀刻处理之前用预蚀刻等离子体处理一次一片地处理切片，然后进行后蚀刻处理。 该系统包括动力装载锁，主室，真空泵射频电​​源，射频匹配网，热交换器和节流阀和压力控制器，气流分配和微处理器控制器。 半导体晶片一次一个地从存储盒通过具有关节式机械臂的隔离门自动馈送到用于预蚀刻工艺的动力入口负载锁。 在完成预蚀刻处理之前，将半导体晶片自动转移到主室用于主蚀刻工艺，然后转移到用于后蚀刻处理的动力出口负载锁，最后转移到输出盒。

    Vacuum processing system
    9.
    发明授权
    Vacuum processing system 失效
    真空加工系统

    公开(公告)号：US4687542A

    公开(公告)日：1987-08-18

    申请号：US790924

    申请日：1985-10-24

    申请人： Cecil J. Davis ,  Robert Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Robert Matthews ,  Randall C. Hildenbrand

    IPC分类号： H01L21/00 ,  H01L21/677 ,  H01L21/687 ,  H01L21/02

    CPC分类号： H01L21/67748 ,  H01L21/67201 ,  H01L21/67772 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/141

    摘要： A system for performing one semiconductor manufacturing operation or sequence of operations with reduced particulate contamination. A vacuum-tight wafer carrier, which contains numerous wafers in vacuum in a sealed box, is placed into a platform inside a vacuum load lock. The platform contains slots and protruding fingers to provide accurate registration of the position of the wafer carrier. After the load lock is pumped down, the door of the wafer carrier is opened, and a transfer arm removes wafers from the wafer carrier, in any desired order, and transfers them one by one through a port into a processing chamber.

    摘要翻译： 一种用于执行一种半导体制造操作或具有减少的颗粒污染的操作序列的系统。 在密封箱中真空中包含许多晶片的真空密封晶片载体被放置在真空装载锁中的平台内。 平台包含槽和突出的指状物，以提供晶片载体的位置的精确对准。 在下载负载锁定之后，打开晶片载体的门，并且传送臂以任何所需的顺序从晶片载体上移除晶片，并通过端口将它们一个接一个地传送到处理室中。