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1.发明授权Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5591493A
公开(公告)日：1997-01-07
申请号：US472606
申请日：1995-06-07
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译： 具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。
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2.发明授权Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5580385A
公开(公告)日：1996-12-03
申请号：US269414
申请日：1994-06-30
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译： 具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。
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3.发明授权Semiconductor wafer heater with infrared lamp module with light blocking means 失效带红外灯模块的半导体晶片加热器具有遮光装置
公开(公告)号：US5345534A
公开(公告)日：1994-09-06
申请号：US39720
申请日：1993-03-29
IPC分类号： H01L21/26 , H01L21/00 , H01L21/324 , H01L21/20
CPC分类号： H01L21/67115
摘要： A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.
摘要翻译： 辐射灯加热器中的薄反射圆柱形挡板[20]设置在多个加热灯泡[2,4,6]下方的空间（布置在中心位置并且围绕中间和外环）以及石英窗 [12]。 挡板直径使其适合在中间[4]和外部[6]球形环之间的环形空间内。 阻挡由灯泡[20]产生的预定量的光的挡板允许改善由辐射灯加热器加热的晶片的晶片温度分布的可控制性。
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公开(公告)号：US4911103A
公开(公告)日：1990-03-27
申请号：US274611
申请日：1988-11-22
CPC分类号： H01L21/67017 , C23C16/54 , C30B31/103 , C30B35/005
摘要： A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set of notches in the quartz arms. Optionally, a vertical degree of movement in the arm may be used to accomplish this, and the quartz arms may be immovable. This means that the port from the multi-wafer module into the wafer transfer system must be high enough to accommodate the necessary vertical movement of the transfer arm. After the transfer arm has placed the wafer on the quartz arms, the process module can be elevated to close around the set of wafers and made a seal. If the wafer transport arm is already configured to access wafers directly out of a multi-wafer vacuum wafer carrier, the necessary degree of freedom will necessarily already be present in the transfer arm, and at least one port of the necessary vertical dimensions will necessarily also be already present (between the loadlock and the transfer chamber). This is particularly useful in combination with relatively slow processes, such as thick field oxidation, long anneals, or long furnace heating steps used to drive in diffusions.
摘要翻译： 一种与使用主要是真空晶片传输的系统兼容的处理模块，但是允许在单个模块中并行处理多个片段。 这通过在模块中使用缺口石英臂来实现，使得传输臂可以将几个晶片中的每一个放置在石英臂中的一组凹口中。 可选地，可以使用臂中的垂直移动度来实现这一点，并且石英臂可以是不可移动的。 这意味着从多晶片模块到晶片传送系统的端口必须足够高以适应传送臂的必要的垂直移动。 在传送臂已经将晶片放置在石英臂上之后，可以将处理模块升高以围绕该组晶片闭合并且形成密封。 如果晶片传送臂已经被配置成直接从多晶片真空晶片载体中进入晶片，则必需的自由度必然已经存在于传送臂中，并且必要的垂直尺寸的至少一个端口也将必然地 已经存在（在负载锁和转移室之间）。 这特别适用于相对较慢的工艺，例如厚场氧化，长退火或用于扩散驱动的长炉加热步骤。
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公开(公告)号：US4875989A
公开(公告)日：1989-10-24
申请号：US283036
申请日：1988-12-05
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
CPC分类号： H01L21/67017 , G03F7/168
摘要： A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.
摘要翻译： 一种用于部分制造的集成电路晶片或其它基本上平坦和薄的工件的边缘优先处理的处理装置和方法。 使用远离工件的等离子体产生活化物质，并且靠近晶片表面而不与其接触的挡板用于引导活化物质流。 该模块可以设置为执行旋转光刻胶的边缘珠去除和烘烤。
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公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.
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公开(公告)号：US4832778A
公开(公告)日：1989-05-23
申请号：US201299
申请日：1988-05-27
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/6719 , H01L21/67751 , H01L21/68785
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpieces which may be loaded into the chamber.
摘要翻译： 一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。 压力容器可以非常小，即具有总加压体积，其几乎所有内部点都可以装载到腔室中的一个工件的一或两厘米内。
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公开(公告)号：US4830700A
公开(公告)日：1989-05-16
申请号：US188177
申请日：1988-04-27
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.
摘要翻译： 一种用于快速热处理系统的辐射加热处理装置和方法，其中只有反射器模块的基底直接水冷。 反射器模块的两侧不直接水冷; 相反，该模块被制成一个滑动配合到具有水冷壁的室中。 因此，在希望能够通过限制的间隙适应快速热处理辐射热源的应用中，特别是在希望能够通过真空法兰插入模块的应用中，必要的间隙通过 否则将需要用于侧壁的水冷却的宽度。
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公开(公告)号：US5653838A
公开(公告)日：1997-08-05
申请号：US535423
申请日：1995-09-28
申请人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
发明人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
CPC分类号： C03B23/245 , C03B29/02 , H01J9/261 , Y02P40/57
摘要： A glass heating and sealing system (10, 30, 60) and method for manufacturing a flat panel display including anode and cathode glass panels with a vacuum compartment between them includes a plurality of vacuum chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) for processing glass panels (39, 63, 74). Transfer of glass panels (39, 63, 74) between chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) is accomplished by a transfer mechanism (24, 42, 68, 72) located within a central vacuum chamber (22, 40, 70) commonly connected to the other chambers. System (10, 30, 60) may include a rapid thermal processing (RTP) chamber (14, 34, 38, 76) for quick and even heating of the panels (39, 63, 74). System (10) includes an e-beam bombardment chamber (16) for preconditioning the anode glass panels, and a heating chamber (18) for fusing anode glass panels to cathode glass panels. Different levels of vacuum may be established in different chambers.
摘要翻译： 一种玻璃加热和密封系统（10,30,60）以及用于制造平板显示器的方法，包括在它们之间具有真空室的阳极和阴极玻璃面板包括多个真空室（12,14,16,18,20， 32,34,36,38,61,76），用于加工玻璃面板（39,63,74）。 在室（12,14,16,18,20,32,34,36,38,61,76）之间转移玻璃面板（39,63,74）由转印机构（24,42,68,72 ）位于通常连接到其它室的中央真空室（22,40,70）内。 系统（10,30,60）可以包括用于快速并均匀加热面板（39,63,74）的快速热处理（RTP）室（14,34,38,76）。 系统（10）包括用于预处理阳极玻璃面板的电子束轰击室（16）和用于将阳极玻璃面板熔合到阴极玻璃面板的加热室（18）。 可以在不同的室中建立不同程度的真空。
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公开(公告)号：US4816098A
公开(公告)日：1989-03-28
申请号：US73940
申请日：1987-07-16
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/677 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/67748 , H01L21/67751 , Y10S414/139
摘要： A processing apparatus and method for transferring wafers or flat workpieces between a controlled vacuum load lock and a non-vacuum transfer mechanism. The apparatus is adapted to receive the wafers in a carrier under vacuum. The load lock chamber of the apparatus is then pumped down and purged, if desired. Next the chamber is brought to ambient pressure and an opening to the chamber is created. A transfer arm within the chamber transfers the wafers from the carrier through the opening and to a platform or an non-vacuum carrier. The wafers are received by the arm outside the chamber and transferred through the opening and placed into the vacuum carrier within the chamber. The opening into the chamber is closed and a vacuum is generated. The chamber can then be purged, if desired and the vacuum carrier sealed. The carrier can now be removed from the load lock chamber.
摘要翻译： 一种用于在受控真空负载锁和非真空转移机构之间转移晶片或平坦工件的处理设备和方法。 该装置适于在真空下在载体中接收晶片。 如果需要，装置的装载锁定室然后被泵送并清除。 接下来，使腔室达到环境压力并且产生到腔室的开口。 腔室内的转移臂将晶片从载体通过开口转移到平台或非真空载体。 晶片由臂外部的臂接收并通过开口传送并放置在腔室内的真空载体中。 进入腔室的开口关闭并产生真空。 然后，如果需要，可以将腔室吹扫，并将真空载体密封。 载体现在可以从装载锁定室移除。
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