公开(公告)号：US5604138A

公开(公告)日：1997-02-18

申请号：US357961

申请日：1994-12-15

Applicant: Chang-Jae Lee ,  Young-Jin Song

Inventor： Chang-Jae Lee ,  Young-Jin Song

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/469 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L29/6659 ,  H01L21/28123

Abstract: A process for forming an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming a first insulating layer on a semiconductor substrate; forming a conductive layer on the first insulating layer; forming a second insulating layer on the conductive layer; forming a third insulating layer on the second insulating layer; forming an etch inhibiting layer pattern for forming an over-sized gate on a relevant area of the second insulating layer; removing the second and third insulating layers and the conductive layer excluding the portions protected from the etch inhibiting layer, so as to form a stacked pattern consisting of the residual second insulating layer/the third insulating layer/the conductive layer; forming a first impurity ion buried layer on a relevant portion of the semiconductor substrate utilizing the stacked pattern for formation of a source/drain region; removing the etch inhibiting layer; removing an edge portion of the remaining second insulating layer of the stacked pattern for forming the final gate; removing the residual third insulating layer of the stacked pattern; etching the residual conductive layer by using the partly removed second insulating layer as the mask to form the final gate; forming a second impurity ion buried layer on the relevant portion of the semiconductor substrate for forming the LDD structure; forming a fourth insulating layer on the whole surface of the wafer; and activating the first and second ion buried layers.

Abstract translation: 公开了一种用于形成具有LDD结构的MOS半导体器件的工艺，其可以包括以下步骤：在半导体衬底上形成第一绝缘层; 在所述第一绝缘层上形成导电层; 在所述导电层上形成第二绝缘层; 在所述第二绝缘层上形成第三绝缘层; 形成用于在所述第二绝缘层的相关区域上形成超大尺寸栅极的蚀刻抑制层图案; 除去不受蚀刻抑制层保护的部分的第二绝缘层和第三绝缘层和导电层，以形成由残留的第二绝缘层/第三绝缘层/导电层组成的层叠图案; 使用用于形成源极/漏极区域的堆叠图案在半导体衬底的相关部分上形成第一杂质离子掩埋层; 去除蚀刻抑制层; 去除用于形成最终栅极的层叠图案的剩余第二绝缘层的边缘部分; 去除堆叠图案的残余第三绝缘层; 通过使用部分去除的第二绝缘层作为掩模来蚀刻残留导电层以形成最终栅极; 在所述半导体衬底的相关部分上形成第二杂质离子掩埋层以形成所述LDD结构; 在晶片的整个表面上形成第四绝缘层; 并激活第一和第二离子掩埋层。

公开(公告)号：US5891810A

公开(公告)日：1999-04-06

申请号：US773175

申请日：1996-12-27

Applicant: Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

Inventor： Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

IPC: H01L21/31 ,  C23C16/40 ,  C23C16/452 ,  C23C16/52 ,  H01L21/316 ,  H01L21/469

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/452 ,  C23C16/52 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/31625

Abstract: A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.

Abstract translation: 一种用于控制膜沉积系统的层中的臭氧浓度的量和由此产生的多层结构的方法和装置，由此各层中的臭氧浓度从第一沉积层中的低臭氧浓度逐渐变为 最后沉积层中的高臭氧浓度。

公开(公告)号：US6004397A

公开(公告)日：1999-12-21

申请号：US238067

申请日：1999-01-27

Applicant: Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

Inventor： Nae-Hak Park ,  Yun-Hee Kim ,  Young-Jin Song

IPC: H01L21/316 ,  C23C16/00

CPC classification number: H01L21/02126 ,  H01L21/02271 ,  H01L21/31662

Abstract: A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.

Abstract translation: 一种用于控制膜沉积系统的层中的臭氧浓度的量和由此产生的多层结构的方法和装置，由此各层中的臭氧浓度从第一沉积层中的低臭氧浓度逐渐变为 最后沉积层中的高臭氧浓度。

公开(公告)号：US06296346B1

公开(公告)日：2001-10-02

申请号：US09285238

申请日：1999-04-02

Applicant: O-Gweon Seo ,  Seung-Ho Nam ,  Byoung-Lyong Choi ,  Young-Jin Song

Inventor： O-Gweon Seo ,  Seung-Ho Nam ,  Byoung-Lyong Choi ,  Young-Jin Song

IPC: B41J204

CPC classification number: B41J2/14008

Abstract: An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digital transducer electrodes for applying a voltage of a predetermined voltage, a piezoelectric element for generating the lamb wave by means of the voltage applied from the inter-digital transducer electrodes. Thus, as the voltage is applied to the inter-digital transducer electrodes, the lamb wave is generated from the lamb wave generating board, and the ink reserved in the ink chamber is ejected out of the nozzles.

Abstract translation: 一种利用兰姆波喷射墨水的装置及其制造方法，该装置包括具有喷嘴的墨水室，以及用于提供喷射力以将墨水喷射出喷嘴的喷射力源。 喷射力源包括用于施加预定电压的电压的数字式换能器电极，用于通过从数字式换能器电极施加的电压产生兰姆波的压电元件。 因此，当电压施加到数字式换能器电极时，从兰姆波发​​生板产生兰姆波，并且将留在墨室中的墨喷射出喷嘴。