公开(公告)号：US06337520B1

公开(公告)日：2002-01-08

申请号：US09031486

申请日：1998-02-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Chun-Gi You

IPC分类号： H01L2348

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线 装置以及Al层和Cr层。 由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

公开(公告)号：US06445004B1

公开(公告)日：2002-09-03

申请号：US09617311

申请日：2000-07-14

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US06582982B2

公开(公告)日：2003-06-24

申请号：US09962210

申请日：2001-09-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2100

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US06486494B2

公开(公告)日：2002-11-26

申请号：US10035245

申请日：2002-01-04

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US06380098B1

公开(公告)日：2002-04-30

申请号：US09492830

申请日：2000-01-27

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L21302

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线 装置以及Al层和Cr层。 由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

公开(公告)号：US06946681B2

公开(公告)日：2005-09-20

申请号：US10732480

申请日：2003-12-11

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L23/482 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOggacm的低电阻率，并且使用Al合金附魔或Cr附魔蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 O 2 O 2的蚀刻气体系统 防止Mo或MoW合金层的蚀刻，以及SF 6+ + HCl（+ He）或SF 6 + Cl 2 2的蚀刻气体 >（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢的气体和选自以下的至少一种气体的蚀刻气体系统： 4，CHF 3，CHClF 2，CH 3，F和C 2 _{6 ，产生良好的TFT特性，H 2等离子体处理可进一步提高TFT特性。}

公开(公告)号：US06570182B2

公开(公告)日：2003-05-27

申请号：US10190494

申请日：2002-07-09

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US06686606B2

公开(公告)日：2004-02-03

申请号：US10389778

申请日：2003-03-18

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US6081308A

公开(公告)日：2000-06-27

申请号：US31445

申请日：1998-02-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jueng-Gil Lee

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jueng-Gil Lee

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L23/482 ,  H01L29/423 ,  H01L29/49 ,  G02F1/136 ,  G02F1/1343 ,  H01L23/48 ,  H01L29/04

CPC分类号： G02F1/1368 ,  G02F1/136286 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L2924/0002

摘要： Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.

摘要翻译： 由于通过调整沉积压力可以沉积Mo或MoW层以便对衬底施加低应力，所以可以使用单个Mo或MoW层作为大规模和高分辨率液晶本身的布线。 Mo或MoW层具有小于15微米欧米伽厘米的低电阻率，并且使用Al或Al合金的Al蚀刻剂被蚀刻以具有平滑的锥角。 因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

公开(公告)号：US07288442B2

公开(公告)日：2007-10-30

申请号：US10634867

申请日：2003-08-06

申请人： Hyang-Shik Kong ,  Myung-Koo Hur ,  Chi-Woo Kim

发明人： Hyang-Shik Kong ,  Myung-Koo Hur ,  Chi-Woo Kim

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： G02F1/13439 ,  G02F1/13458 ,  H01L21/76801 ,  H01L21/76838 ,  H01L23/53209 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

摘要翻译： 首先，将铝基材料的导电材料沉积并图案化以形成包括栅极线，栅极焊盘和栅电极的栅极线。 通过在大于300℃的范围内沉积氮化硅5分钟形成栅极绝缘层，并依次形成半导体层和欧姆接触层。 接下来，沉积并图案化诸如Cr的金属的导体层以形成数据线，其包括与栅极线相交的数据线，源电极，漏电极和数据焊盘。 然后，沉积并图案化钝化层以形成暴露漏电极，栅极焊盘和数据焊盘的接触孔。 接下来，沉积并图案化氧化铟锌以形成分别连接到漏电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。