公开(公告)号：US08053266B2

公开(公告)日：2011-11-08

申请号：US12758879

申请日：2010-04-13

申请人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, Jr. ,  John W. Hartzell

发明人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, Jr. ,  John W. Hartzell

IPC分类号： H01L21/324 ,  H01L21/84

CPC分类号： B81B3/0021 ,  H01L29/868

摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

公开(公告)号：US07763947B2

公开(公告)日：2010-07-27

申请号：US11717231

申请日：2007-03-13

申请人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, Jr. ,  John W. Hartzell

发明人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, Jr. ,  John W. Hartzell

IPC分类号： H01L41/113

CPC分类号： B81B3/0021 ,  H01L29/868

摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

公开(公告)号：US20100197065A1

公开(公告)日：2010-08-05

申请号：US12758879

申请日：2010-04-13

申请人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, JR. ,  John W. Hartzell

发明人： Changqing Zhan ,  Paul J. Schuele ,  John F. Conley, JR. ,  John W. Hartzell

IPC分类号： H01L21/329

CPC分类号： B81B3/0021 ,  H01L29/868

摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

公开(公告)号：US08685774B2

公开(公告)日：2014-04-01

申请号：US13337843

申请日：2011-12-27

申请人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

发明人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  H01L33/007 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32

摘要： A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.

摘要翻译： 提供了一种用于制造具有平面表面的三维氮化镓（GaN）柱结构的方法。 在提供衬底之后，该方法生长覆盖在衬底的顶表面上的GaN膜，并在GaN膜的顶表面中形成空腔。 使用激光烧蚀，离子注入，喷砂或干蚀刻工艺形成空腔。 然后湿式蚀刻GaN膜顶表面中的空腔，形成延伸到GaN膜中的平面侧壁。 更明确地说，空腔形成为c面GaN薄膜顶表面，并且平面侧壁在m平面或a平面系列中垂直于c平面形成。

公开(公告)号：US20130161643A1

公开(公告)日：2013-06-27

申请号：US13337843

申请日：2011-12-27

申请人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

发明人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

IPC分类号： H01L33/34 ,  H01L33/32

CPC分类号： H01L33/34 ,  H01L33/007 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32

摘要： A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.

摘要翻译： 提供了一种用于制造具有平面表面的三维氮化镓（GaN）柱结构的方法。 在提供衬底之后，该方法生长覆盖在衬底的顶表面上的GaN膜，并在GaN膜的顶表面中形成空腔。 使用激光烧蚀，离子注入，喷砂或干蚀刻工艺形成空腔。 然后湿式蚀刻GaN膜顶表面中的空腔，形成延伸到GaN膜中的平面侧壁。 更明确地说，空腔形成为c面GaN薄膜顶表面，并且平面侧壁在m平面或a平面系列中垂直于c平面形成。

公开(公告)号：US08648328B2

公开(公告)日：2014-02-11

申请号：US13367120

申请日：2012-02-06

申请人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

发明人： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L2933/0008 ,  H01L2933/0016

摘要： A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

摘要翻译： 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。

公开(公告)号：US07785912B2

公开(公告)日：2010-08-31

申请号：US11818716

申请日：2007-06-15

申请人： Changqing Zhan ,  Michael Barrett Wolfson ,  John W. Hartzell

发明人： Changqing Zhan ,  Michael Barrett Wolfson ,  John W. Hartzell

IPC分类号： H01L21/00

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US07253488B2

公开(公告)日：2007-08-07

申请号：US11031320

申请日：2005-01-05

申请人： Changqing Zhan ,  Michael Barrett Wolfson ,  John W. Hartzell

发明人： Changqing Zhan ,  Michael Barrett Wolfson ,  John W. Hartzell

IPC分类号： H01L27/14

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US20110032743A1

公开(公告)日：2011-02-10

申请号：US12835974

申请日：2010-07-14

申请人： Jiandong Huang ,  Liang Tang ,  Changqing Zhan ,  Chang-Ching Tu

发明人： Jiandong Huang ,  Liang Tang ,  Changqing Zhan ,  Chang-Ching Tu

IPC分类号： G11C13/04 ,  G11C11/34 ,  H01L45/00 ,  H01L21/20 ,  B82Y10/00 ,  B82Y15/00

CPC分类号： H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/18

摘要： Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.

摘要翻译： 已经提出了胶体加工的Si粒子装置，器件制造和器件用途。 通用器件包括衬底，覆盖衬底的第一电极，覆盖衬底的第二电极，与第一电极横向相邻，并且与第一电极间隔开。 胶体处理的Si颗粒层覆盖第一电极，第二电极和电极之间的间隔。 Si颗粒层包括第一多个纳米尺寸的Si颗粒和第二多个微尺寸的Si颗粒。

公开(公告)号：US07425749B2

公开(公告)日：2008-09-16

申请号：US11516473

申请日：2006-09-06

申请人： John Walter Hartzell ,  Changqing Zhan ,  Michael Barrett Wolfson

发明人： John Walter Hartzell ,  Changqing Zhan ,  Michael Barrett Wolfson

IPC分类号： H01L29/66 ,  G01N27/00

CPC分类号： G01L1/18 ,  B81C1/00246 ,  G01L1/16 ,  H01L27/12 ,  H01L27/20 ,  H04R17/02 ,  H04R19/00 ,  H04R31/00 ,  H04R2499/11

摘要： A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplies power to the electronic device and transceives electrical signals. The sensor is able to operate dynamically, in real-time. For example, if the mechanical device undergoes a sequence of mechanical states at a corresponding plurality of times, the electronic device is able to supply a sequence of electrical signals to the pixel interface that are responsive to the sequence of mechanical states, at the plurality of times. Each MEMS pixel sensor may include a number of mechanical devices, and corresponding electronic devices, to provide redundancy or to measure a broadband response range.

摘要翻译： MEMS像素传感器设置有具有机械体的薄膜机械装置，其具有响应于邻近环境的机械状态。 薄膜电子设备将机械状态转换为电信号。 像素接口为电子设备供电并收发电信号。 该传感器能够实时动态地运行。 例如，如果机械装置在相应的多次经历了一系列机械状态，那么电子装置能够在多个时刻向像素接口提供响应于机械状态序列的电信号序列 次 每个MEMS像素传感器可以包括多个机械设备和相应的电子设备，以提供冗余或测量宽带响应范围。