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公开(公告)号：US08053266B2
公开(公告)日：2011-11-08
申请号：US12758879
申请日：2010-04-13
IPC分类号： H01L21/324 , H01L21/84
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
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公开(公告)号：US07763947B2
公开(公告)日：2010-07-27
申请号：US11717231
申请日：2007-03-13
IPC分类号： H01L41/113
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
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公开(公告)号：US20100197065A1
公开(公告)日：2010-08-05
申请号：US12758879
申请日：2010-04-13
IPC分类号： H01L21/329
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
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公开(公告)号：US07785912B2
公开(公告)日：2010-08-31
申请号：US11818716
申请日：2007-06-15
IPC分类号： H01L21/00
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81C1/00246 , B81C2203/075 , C30B1/02 , C30B29/00 , G01L1/044 , G01L9/0042 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L27/12 , H01L29/66757 , H04R17/02 , H04R31/006
摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。
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公开(公告)号：US07253488B2
公开(公告)日：2007-08-07
申请号：US11031320
申请日：2005-01-05
IPC分类号： H01L27/14
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81C1/00246 , B81C2203/075 , C30B1/02 , C30B29/00 , G01L1/044 , G01L9/0042 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L27/12 , H01L29/66757 , H04R17/02 , H04R31/006
摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。
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公开(公告)号：US20080079663A1
公开(公告)日：2008-04-03
申请号：US11821148
申请日：2007-06-22
IPC分类号： G09G3/20
摘要： A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed on a substrate, wherein each pixel includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.
摘要翻译： 逐像素，可数字寻址，像素化，前体，流体测定，包括形成在衬底上的多个像素的有源矩阵微结构，其中每个像素包括（a）至少一个非功能化的，可数字寻址的 和（b），其可操作地邻近该传感器设置，可数字寻址和激励的电磁场产生结构，其被选择性地激励以在所述至少一个测定传感器附近产生环境电磁场环境，所述环境电磁场环境被构造 在所述至少一个测定传感器上辅助功能化至少一个可显示对所选择的流体测定材料的亲和性的可数字寻址的测定位点。
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公开(公告)号：US08236571B2
公开(公告)日：2012-08-07
申请号：US11827175
申请日：2007-07-10
IPC分类号： G01N21/00
CPC分类号： B81C1/00246 , B81B2201/0214 , B81C2203/075 , Y10S436/805
摘要： A method of producing a precursor, active-matrix, fluid-assay micro-structure including the steps of (1) utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of non-functionalized pixels, and (2) preparing at least one of these pixels for individual, digitally-addressed (a) functionalization, and (b) reading out, ultimately, of completed assay results.
摘要翻译： 一种制备前体，活性基质，流体测定微结构的方法，包括以下步骤：（1）利用低温TFT和Si技术，优选在玻璃或塑料基材上建立非官能化像素的矩阵阵列， 和（2）准备用于个体，数字寻址（a）功能化的这些像素中的至少一个，以及（b）最终读出完成的测定结果。
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公开(公告)号：US20080085559A1
公开(公告)日：2008-04-10
申请号：US11888491
申请日：2007-07-31
CPC分类号： C12Q1/6813 , Y10S436/805
摘要： A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.
摘要翻译： 使用包括至少一个具有传感器的活性像素的装置进行流体材料测定的方法，所述传感器具有用于所选流体测定材料功能化的测定位点。 该方法包括将像素的传感器测定位点暴露于这种材料，并结合这样的曝光，并采用像素的主动特性，从像素的传感器测定位点远程请求测定结果输出报告。 该方法还包括关于采用步骤，相对于至少一个像素中的传感器的测定位置产生预定的像素特定的电磁场环境。
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公开(公告)号：US20080084372A1
公开(公告)日：2008-04-10
申请号：US11827174
申请日：2007-07-10
IPC分类号： G09G3/36
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/1822 , B01L2300/1827
摘要： A pixel-by-pixel digitally-addressable, pixelated, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one functionalized, digitally-addressable assay sensor including at least one functionalized, digitally-addressable assay site which has been affinity-functionalized to respond to a selected, specific fluid-assay material, and (b) disposed operatively adjacent that sensor and its associated assay site, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the sensor and its associated assay site, a selected, ambient, electromagnetic field environment which is structured to assist, selectively and optionally only, in the reading-out of an assay-result response from the assay sensor and assay site.
摘要翻译： 逐像素可数字寻址，像素化，流体测定，包括优选地形成在玻璃或塑料基板上的多个像素的有源矩阵微结构，其中利用低温TFT和Si技术形成的每个像素包括（ a）至少一个功能化的，可数字寻址的测定传感器，其包括至少一个官能化的，可数字寻址的测定位点，其已经被亲和功能化以响应所选择的特定流体测定材料，和（b）可操作地邻近该传感器 以及其相关联的测定位点，可数字寻址和可激励的电磁场创建结构，其可选择性地激励以在传感器及其相关联的测定位点附近产生所选择的环境电磁场环境，其被构造为有选择地辅助 并且可选地仅在从测定传感器和测定位点读出测定结果响应中。
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公开(公告)号：US20140198072A1
公开(公告)日：2014-07-17
申请号：US13740043
申请日：2013-01-11
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F3/0412 , G06F3/043
摘要： A video display is provided with a planar piezoelectric transmitter to transmit ultrasound signals, and a display panel including a plurality of pixels. Each pixel has a data interface to accept a video signal with a variable voltage associated with a range of light intensity values, and to supply a touch signal with a variable voltage derived from a range of reflected ultrasound signal energies. Each pixel is made up of a light device to supply light with an intensity responsive to the video signal voltage, and a storage capacitor to maintain a video signal voltage between refresh cycles. A piezoelectric transducer accepts a reflected ultrasound signal energy and maintains a touch signal voltage between refresh cycles. In one aspect, the storage capacitor and the piezoelectric transducer are the same device. The light device may be a liquid crystal (LC) layer or a light emitting diode.
摘要翻译： 视频显示器设置有用于传输超声波信号的平面压电发射器，以及包括多个像素的显示面板。 每个像素具有接收具有与一定范围的光强度值相关联的可变电压的视频信号的数据接口，并且提供具有从反射的超声信号能量的范围导出的可变电压的触摸信号。 每个像素由光装置组成，以响应于视频信号电压的强度提供光，以及存储电容器，用于在刷新周期之间维持视频信号电压。 压电传感器接受反射的超声信号能量并在刷新周期之间保持触摸信号电压。 一方面，存储电容器和压电换能器是相同的装置。 光装置可以是液晶（LC）层或发光二极管。
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