-
公开(公告)号：US08053266B2
公开(公告)日：2011-11-08
申请号：US12758879
申请日：2010-04-13
IPC分类号： H01L21/324 , H01L21/84
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
-
公开(公告)号：US07763947B2
公开(公告)日：2010-07-27
申请号：US11717231
申请日：2007-03-13
IPC分类号： H01L41/113
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
-
公开(公告)号：US20100197065A1
公开(公告)日：2010-08-05
申请号：US12758879
申请日：2010-04-13
IPC分类号： H01L21/329
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。
-
4.发明申请公开(公告)号：US20130161643A1
公开(公告)日：2013-06-27
申请号：US13337843
申请日：2011-12-27
CPC分类号： H01L33/34 , H01L33/007 , H01L33/18 , H01L33/24 , H01L33/32
摘要： A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.
摘要翻译： 提供了一种用于制造具有平面表面的三维氮化镓（GaN）柱结构的方法。 在提供衬底之后，该方法生长覆盖在衬底的顶表面上的GaN膜，并在GaN膜的顶表面中形成空腔。 使用激光烧蚀，离子注入，喷砂或干蚀刻工艺形成空腔。 然后湿式蚀刻GaN膜顶表面中的空腔，形成延伸到GaN膜中的平面侧壁。 更明确地说，空腔形成为c面GaN薄膜顶表面，并且平面侧壁在m平面或a平面系列中垂直于c平面形成。
-
5.发明授权Method for fabricating three-dimensional gallium nitride structures with planar surfaces 有权制备具有平面表面的三维氮化镓结构的方法公开(公告)号：US08685774B2
公开(公告)日：2014-04-01
申请号：US13337843
申请日：2011-12-27
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , H01L33/007 , H01L33/18 , H01L33/24 , H01L33/32
摘要： A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.
摘要翻译： 提供了一种用于制造具有平面表面的三维氮化镓（GaN）柱结构的方法。 在提供衬底之后，该方法生长覆盖在衬底的顶表面上的GaN膜，并在GaN膜的顶表面中形成空腔。 使用激光烧蚀，离子注入，喷砂或干蚀刻工艺形成空腔。 然后湿式蚀刻GaN膜顶表面中的空腔，形成延伸到GaN膜中的平面侧壁。 更明确地说，空腔形成为c面GaN薄膜顶表面，并且平面侧壁在m平面或a平面系列中垂直于c平面形成。
-
6.发明授权Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces 有权使用具有平面表面的三维氮化镓（GaN）柱结构的发光二极管（LED）公开(公告)号：US08648328B2
公开(公告)日：2014-02-11
申请号：US13367120
申请日：2012-02-06
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L2933/0008 , H01L2933/0016
摘要： A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
摘要翻译： 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。
-
公开(公告)号：US20080079663A1
公开(公告)日：2008-04-03
申请号：US11821148
申请日：2007-06-22
IPC分类号： G09G3/20
摘要： A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed on a substrate, wherein each pixel includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.
摘要翻译： 逐像素，可数字寻址，像素化，前体，流体测定，包括形成在衬底上的多个像素的有源矩阵微结构，其中每个像素包括（a）至少一个非功能化的，可数字寻址的 和（b），其可操作地邻近该传感器设置，可数字寻址和激励的电磁场产生结构，其被选择性地激励以在所述至少一个测定传感器附近产生环境电磁场环境，所述环境电磁场环境被构造 在所述至少一个测定传感器上辅助功能化至少一个可显示对所选择的流体测定材料的亲和性的可数字寻址的测定位点。
-
公开(公告)号：US08236571B2
公开(公告)日：2012-08-07
申请号：US11827175
申请日：2007-07-10
IPC分类号： G01N21/00
CPC分类号： B81C1/00246 , B81B2201/0214 , B81C2203/075 , Y10S436/805
摘要： A method of producing a precursor, active-matrix, fluid-assay micro-structure including the steps of (1) utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of non-functionalized pixels, and (2) preparing at least one of these pixels for individual, digitally-addressed (a) functionalization, and (b) reading out, ultimately, of completed assay results.
摘要翻译： 一种制备前体，活性基质，流体测定微结构的方法，包括以下步骤：（1）利用低温TFT和Si技术，优选在玻璃或塑料基材上建立非官能化像素的矩阵阵列， 和（2）准备用于个体，数字寻址（a）功能化的这些像素中的至少一个，以及（b）最终读出完成的测定结果。
-
公开(公告)号：US20080085559A1
公开(公告)日：2008-04-10
申请号：US11888491
申请日：2007-07-31
CPC分类号： C12Q1/6813 , Y10S436/805
摘要： A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.
摘要翻译： 使用包括至少一个具有传感器的活性像素的装置进行流体材料测定的方法，所述传感器具有用于所选流体测定材料功能化的测定位点。 该方法包括将像素的传感器测定位点暴露于这种材料，并结合这样的曝光，并采用像素的主动特性，从像素的传感器测定位点远程请求测定结果输出报告。 该方法还包括关于采用步骤，相对于至少一个像素中的传感器的测定位置产生预定的像素特定的电磁场环境。
-
公开(公告)号：US20080084372A1
公开(公告)日：2008-04-10
申请号：US11827174
申请日：2007-07-10
IPC分类号： G09G3/36
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/1822 , B01L2300/1827
摘要： A pixel-by-pixel digitally-addressable, pixelated, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one functionalized, digitally-addressable assay sensor including at least one functionalized, digitally-addressable assay site which has been affinity-functionalized to respond to a selected, specific fluid-assay material, and (b) disposed operatively adjacent that sensor and its associated assay site, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the sensor and its associated assay site, a selected, ambient, electromagnetic field environment which is structured to assist, selectively and optionally only, in the reading-out of an assay-result response from the assay sensor and assay site.
摘要翻译： 逐像素可数字寻址，像素化，流体测定，包括优选地形成在玻璃或塑料基板上的多个像素的有源矩阵微结构，其中利用低温TFT和Si技术形成的每个像素包括（ a）至少一个功能化的，可数字寻址的测定传感器，其包括至少一个官能化的，可数字寻址的测定位点，其已经被亲和功能化以响应所选择的特定流体测定材料，和（b）可操作地邻近该传感器 以及其相关联的测定位点，可数字寻址和可激励的电磁场创建结构，其可选择性地激励以在传感器及其相关联的测定位点附近产生所选择的环境电磁场环境，其被构造为有选择地辅助 并且可选地仅在从测定传感器和测定位点读出测定结果响应中。
-
-
-
-
-
-
-
-
-
搜索结果
64 条记录 (耗时 0.03 秒)
