公开(公告)号：US5874309A

公开(公告)日：1999-02-23

申请号：US730383

申请日：1996-10-16

申请人： Chao-Hsin Chang ,  Hsien-Wen Chang ,  Chih-Chien Hung ,  Kuang-Hui Chang

发明人： Chao-Hsin Chang ,  Hsien-Wen Chang ,  Chih-Chien Hung ,  Kuang-Hui Chang

IPC分类号： G01N17/00 ,  G01N33/00 ,  G01N31/00

CPC分类号： G01N17/006 ,  G01N2033/0095 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method and metal test pattern for monitoring metal corrosion susceptibility for integrated circuit wafers. Test patterns having an array of metal circles to simulate contact regions, an array of metal strips to simulate electrode regions, and a blanket metal layer to simulate bulk metal regions are formed. A first number of defects per unit area for the test patterns is measured, using a defect scan system. The test pattern wafers are then subjected to environmental stress conditions for a first time and a second number of defects per unit area for the test patterns is measured, again using a defect scan system. The difference between the second number and the first number is compared with a critical number. If excessive corrosion occurs the process for producing wafers is corrected before continuing to process product wafers.

摘要翻译： 用于监测集成电路晶片的金属腐蚀敏感性的方法和金属测试图案。 形成具有金属圆阵列以模拟接触区域的测试图案，形成用于模拟电极区域的金属条阵列，以及用于模拟体金属区域的覆盖金属层。 使用缺陷扫描系统测量测试图案的每单位面积的第一数量的缺陷。 然后测试图形晶片首次经受环境应力条件，并再次使用缺陷扫描系统测量测试图案的每单位面积的第二数量的缺陷。 将第二个数字和第一个数字之间的差异与临界数字进行比较。 如果发生过度腐蚀，则在继续处理产品晶片之前校正用于生产晶片的工艺。

公开(公告)号：US06261843B1

公开(公告)日：2001-07-17

申请号：US09208933

申请日：1998-12-10

申请人： Chao-Hsin Chang ,  Hsien-Wen Chang ,  Chih-Chien Hung ,  Kuang-Hui Chang

发明人： Chao-Hsin Chang ,  Hsien-Wen Chang ,  Chih-Chien Hung ,  Kuang-Hui Chang

IPC分类号： G01N3100

CPC分类号： G01N17/006 ,  G01N2033/0095 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method and metal test pattern for monitoring metal corrosion susceptibility for integrated circuit wafers. Test patterns having an array of metal circles to simulate contact regions, an array of metal strips to simulate electrode regions, and a blanket metal layer to simulate bulk metal regions are formed. A first number of defects per unit area for the test patterns is measured, using a defect scan system. The test pattern wafers are then subjected to environmental stress conditions for a first time and a second number of defects per unit area for the test patterns is measured, again using a defect scan system. The difference between the second number and the first number is compared with a critical number. If excessive corrosion occurs the process for producing wafers is corrected before continuing to process product wafers.

摘要翻译： 用于监测集成电路晶片的金属腐蚀敏感性的方法和金属测试图案。 形成具有金属圆阵列以模拟接触区域的测试图案，形成用于模拟电极区域的金属条阵列，以及用于模拟体金属区域的覆盖金属层。 使用缺陷扫描系统测量测试图案的每单位面积的第一数量的缺陷。 然后测试图形晶片首次经受环境应力条件，并再次使用缺陷扫描系统测量测试图案的每单位面积的第二数量的缺陷。 将第二个数字和第一个数字之间的差异与临界数字进行比较。 如果发生过度腐蚀，则在继续处理产品晶片之前校正用于生产晶片的工艺。

公开(公告)号：US5783493A

公开(公告)日：1998-07-21

申请号：US789718

申请日：1997-01-27

申请人： Rann Shyan Yeh ,  Chao-Hsin Chang ,  Hsien-Wen Chang

发明人： Rann Shyan Yeh ,  Chao-Hsin Chang ,  Hsien-Wen Chang

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/76814 ,  H01L21/76826

摘要： The present invention provides a method of manufacturing an interlevel dielectric layer (ILD) which has reduced precipitates after an etch back of the borophosphosilicate glass (BPSG) ILD layer. A dielectric layer containing boron and phosphorous is deposited on the substrate. A reflow process is performed on the dielectric layer at a temperature in a range of between about 800.degree. and 950.degree. C. The dielectric layer is etched back using a reactive ion etch. In an important step, a surface treatment is performed on the dielectric layer thorough a plasma treatment. A plasma source gas for the surface treatment is of a gas selected from the group consisting of Ar, NO.sub.2, N.sub.2, and O.sub.2, at a temperature in a range of between about 250.degree. and 400.degree. C. at a pressure in a range of between about 1 mtorr and 5 torr, at a RF power in a range of between about 300 and 400 watts, and for a time in a range of between about 15 and 80 seconds.

摘要翻译： 本发明提供一种制造层间介电层（ILD）的方法，其在硼磷硅玻璃（BPSG）ILD层的蚀刻之后具有减少的析出物。 含有硼和磷的电介质层沉积在衬底上。 在约800-950℃的温度范围内，在电介质层上进行回流处理。使用反应离子蚀刻将电介质层回蚀刻。 在重要的步骤中，通过等离子体处理对电介质层进行表面处理。 用于表面处理的等离子体源气体是选自Ar，NO 2，N 2和O 2的气体，在约250-400℃的温度范围内，在 在约1mtorr和5托之间，RF功率在约300至400瓦特之间的范围内，并且在约15至80秒的范围内。

公开(公告)号：US5783097A

公开(公告)日：1998-07-21

申请号：US871503

申请日：1997-06-09

申请人： Chi-Shen Lo ,  Chao-Hsin Chang ,  Chia-Hsiang Chen ,  Hsien-Wen Chang ,  Chih-Heng Shen

发明人： Chi-Shen Lo ,  Chao-Hsin Chang ,  Chia-Hsiang Chen ,  Hsien-Wen Chang ,  Chih-Heng Shen

IPC分类号： C03C15/00 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/306 ,  C03C15/00

摘要： A simple, non critical, low cost process step is added to the manufacture of integrated circuit wafers to remove a ridge of dielectric material remaining at the flat edge of the wafer after an edge rinse has removed the ridge of dielectric from the circular edges of the wafer. A layer of dielectric, such as Spin-On-Glass or the like, is formed on the wafer. An edge rinse is then used to remove the ridge of dielectric formed at the wafer edge, however the edge rinse does not remove the ridge of dielectric at the flat edge of the wafer. A layer of photoresist is formed on the wafer, selectively exposed, and developed to form a photoresist mask. The flat edge of the wafer is then dipped in buffered oxide etch to remove the dielectric material at the flat edge of the wafer. The photoresist mask is then stripped and processing of the wafer is continued. Damage to dielectric material at the flat edge of the wafer, which can cause particles to flake off and become a source of defects in subsequent process steps, in thereby avoided.

摘要翻译： 一个简单的，非关键的，低成本的工艺步骤被添加到集成电路晶片的制造中，以在边缘冲洗已经从电极的圆形边缘去除电介质的脊之后去除留在晶片的平坦边缘处的电介质材料的脊 晶圆。 在晶片上形成诸如旋转玻璃等的电介质层。 然后使用边缘冲洗去除在晶片边缘形成的电介质的脊，然而边缘冲洗不会在晶片的平坦边缘处去除电介质的脊。 在晶片上形成一层光致抗蚀剂，选择性地暴露和显影以形成光致抗蚀剂掩模。 然后将晶片的平坦边缘浸入缓冲氧化物蚀刻中以去除晶片平坦边缘处的电介质材料。 然后剥离光致抗蚀剂掩模，继续处理晶片。 在晶片的平坦边缘处的电介质材料损坏，这可能导致颗粒剥离并成为后续工艺步骤中的缺陷源，从而避免了这种损伤。

公开(公告)号：USD662533S1

公开(公告)日：2012-06-26

申请号：US29363697

申请日：2010-06-14

申请人： Chao-Wang Hsiung ,  Hsien-Wen Chang

设计人： Chao-Wang Hsiung ,  Hsien-Wen Chang

公开(公告)号：US20120110060A1

公开(公告)日：2012-05-03

申请号：US12938367

申请日：2010-11-02

申请人： Chui-Huang Pan ,  Hsien-Wen Chang

发明人： Chui-Huang Pan ,  Hsien-Wen Chang

IPC分类号： G06F15/16

CPC分类号： G06F21/6245 ,  G16H40/20

摘要： A network station system with functions of medial register number and medical messages informing comprises a server having a memory, a CPU, and input/output devices; at least one electronic device of a medical organization; the electronic device being connected to the server; the medical messages including the current register number, the predicted treating speed, the related information about the medical organization, the working time of the doctors; a central network unit; the central network unit being connected to the at least one electronic device for receiving the information from the electronic device; these information being displayed or transferred to those needed these information; and at least one patient computer device connected to the central network unit. A patient receives information of register numbers, medical information of medical organizations and advertisements from wired or wireless transmission so as to predict the timing for going to the medical organization.

摘要翻译： 具有内部寄存器号和医疗消息通知功能的网络站系统包括具有存储器，CPU和输入/输出设备的服务器; 至少一个医疗机构的电子设备; 电子设备连接到服务器; 医疗信息包括当前注册号，预测治疗速度，医疗机构的相关信息，医生的工作时间; 中央网络单元; 所述中央网络单元连接到所述至少一个电子设备，用于从所述电子设备接收所述信息; 这些信息被显示或转移到需要这些信息的信息; 以及连接到中央网络单元的至少一个患者计算机设备。 患者从有线或无线传输接收注册号码，医疗机构的医疗信息和广告信息，以预测去医疗机构的时间。

公开(公告)号：US07534004B2

公开(公告)日：2009-05-19

申请号：US11644590

申请日：2006-12-21

申请人： Hsien-Wen Chang

发明人： Hsien-Wen Chang

IPC分类号： G09F13/04 ,  F21V7/04 ,  G02F1/13357

CPC分类号： G02F1/133606 ,  G02F1/133605

摘要： An exemplary backlight module (300) includes a light source (320), a frame (310) and diffusing plate (340). The frame includes an inner bottom surface (314) and an inner side surface (312) adjacent to the bottom surface. The side surface includes a light reflecting and converging structure. The diffusing plate cooperates with the frame to define a space that accommodates the light source. The side surfaces having the v-shape structures can reflect and converge light beams toward the middle portion of the diffusing plate, thus preventing these light beams from otherwise obliquely entering peripheries of the diffusing plate and subsequently being lost. Therefore, the backlight module has an increased light utilization ratio.

摘要翻译： 示例性背光模块（300）包括光源（320），框架（310）和扩散板（340）。 框架包括邻近底面的内底表面（314）和内侧表面（312）。 侧表面包括光反射和会聚结构。 漫射板与框架配合以限定容纳光源的空间。 具有v形结构的侧表面可以将光束反射并会聚到扩散板的中间部分，从而防止这些光束倾斜地进入漫射板的周边并随后丢失。 因此，背光模块具有增加的光利用率。

公开(公告)号：US07458120B2

公开(公告)日：2008-12-02

申请号：US11507133

申请日：2006-08-22

申请人： Hsien-Wen Chang ,  Simon Yu

发明人： Hsien-Wen Chang ,  Simon Yu

IPC分类号： A47C27/08

CPC分类号： A47C27/081 ,  A47C27/084

摘要： An inflatable item includes a hollow body and a valve is connected to the hollow body. The valve is a bladder which has an inlet from which air is introduced in the bladder, and an outlet through which the air is introduced into the hollow body. A tubular insertion is engaged with the inlet and has a passage defined therethrough. A bouncing member is mounted to the tubular insertion so that the user compresses the bladder to push the air in the bladder into the hollow body and the bouncing member bounces the bladder back to original status. The hollow body can be inflated by repeatedly compressing the bladder. A cap removably seals the inlet after the inflatable item is inflated.

公开(公告)号：US20070147093A1

公开(公告)日：2007-06-28

申请号：US11644590

申请日：2006-12-21

申请人： Hsien-Wen Chang

发明人： Hsien-Wen Chang

IPC分类号： F21V7/04

CPC分类号： G02F1/133606 ,  G02F1/133605

摘要： An exemplary backlight module (300) includes a light source (320), a frame (310) and diffusing plate (340). The frame includes an inner bottom surface (314) and an inner side surface (312) adjacent to the bottom surface. The side surface includes a light reflecting and converging structure. The diffusing plate cooperates with the frame to define a space that accommodates the light source. The side surfaces having the v-shape structures can reflect and converge light beams toward the middle portion of the diffusing plate, thus preventing these light beams from otherwise obliquely entering peripheries of the diffusing plate and subsequently being lost. Therefore, the backlight module has an increased light utilization ratio.

摘要翻译： 示例性背光模块（300）包括光源（320），框架（310）和扩散板（340）。 框架包括邻近底面的内底表面（314）和内侧表面（312）。 侧表面包括光反射和会聚结构。 漫射板与框架配合以限定容纳光源的空间。 具有v形结构的侧表面可以将光束反射并会聚到扩散板的中间部分，从而防止这些光束倾斜地进入漫射板的周边并随后丢失。 因此，背光模块具有增加的光利用率。

公开(公告)号：US08429388B2

公开(公告)日：2013-04-23

申请号：US12814407

申请日：2010-06-11

申请人： Sheng-Kai Hsu ,  Hsien-Wen Chang

发明人： Sheng-Kai Hsu ,  Hsien-Wen Chang

IPC分类号： G06F9/24 ,  G06F15/177

CPC分类号： G06F3/04886

摘要： A method for express execution of internet service accessing with a touch-control interface for a computer system is provided. A computer system is installed with a first operating system in a data storage therein. The method includes the following steps: the computer system executing the BIOS of the computer system; before loading and executing the first operating system, the computer system detecting and activating a touch-control display device; the touch-control display device displaying executive item icons representing internet service accessing programs; detecting the executive item icon selection by the user; based on the selection, loading and executing the first operating system; and executing the internet service accessing program corresponding to the selected executive item icon.

摘要翻译： 提供了一种用于通过用于计算机系统的触摸控制接口来快速执行互联网服务访问的方法。 计算机系统在其中的数据存储器中安装有第一操作系统。 该方法包括以下步骤：计算机系统执行计算机系统的BIOS; 在加载和执行第一操作系统之前，计算机系统检测和激活触摸控制显示设备; 所述触摸控制显示装置显示代表互联网服务访问程序的执行项目图标; 检测用户执行项目图标选择; 基于选择，加载和执行第一操作系统; 以及执行与所选择的执行项目图标相对应的因特网服务访问程序。