Optoelectronic device and method for manufacturing the same
    1.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号:US08928026B2

    公开(公告)日:2015-01-06

    申请号:US13565993

    申请日:2012-08-03

    摘要: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译: 光电子器件包括半导体堆叠,其包括第一半导体层,有源层和第二半导体层,与第一半导体层电连接的第一电极,与第二半导体层电连接的第二电极,其中存在最小距离 D1在第一电极和第二电极之间形成,第三电极形成在第一电极的一部分上并与第一电极电连接,第四电极形成在第一电极的一部分上并在第二电极的一部分上,以及 与第二电极电连接,其中在第三电极和第四电极之间具有最小距离D2,并且最小距离D2小于最小距离D1。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号:US20130032848A1

    公开(公告)日:2013-02-07

    申请号:US13565993

    申请日:2012-08-03

    IPC分类号: H01L33/48

    摘要: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译: 光电子器件包括半导体堆叠,其包括第一半导体层,有源层和第二半导体层,与第一半导体层电连接的第一电极,与第二半导体层电连接的第二电极,其中存在最小距离 D1在第一电极和第二电极之间形成,第三电极形成在第一电极的一部分上并与第一电极电连接,第四电极形成在第一电极的一部分上并在第二电极的一部分上,以及 与第二电极电连接,其中在第三电极和第四电极之间具有最小距离D2,并且最小距离D2小于最小距离D1。