公开(公告)号：US08273233B2

公开(公告)日：2012-09-25

申请号：US12460432

申请日：2009-07-17

申请人： Chao-Peng Chen ,  Jas Chudasama ,  Situan Lam ,  Chien-Li Lin

发明人： Chao-Peng Chen ,  Jas Chudasama ,  Situan Lam ,  Chien-Li Lin

IPC分类号： C25D5/02

CPC分类号： C25D5/022 ,  C25D5/18 ,  C25D7/001 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.

摘要翻译： 公开了一种在PMR头中形成写极的方法，其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加（ - ）电流或电压，在电镀溶液中去除全部或部分辅助层。 此后，以（+）电流电镀磁性材料以填充开口，并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化，导致对CoFeNi的粘附不良，以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面，可显着地减少电镀材料中的空隙。

公开(公告)号：US20110011744A1

公开(公告)日：2011-01-20

申请号：US12460432

申请日：2009-07-17

申请人： Chao-Peng Chen ,  Jas Chudasama ,  Situan Lam ,  Chien-Li Lin

发明人： Chao-Peng Chen ,  Jas Chudasama ,  Situan Lam ,  Chien-Li Lin

IPC分类号： C25D7/00

CPC分类号： C25D5/022 ,  C25D5/18 ,  C25D7/001 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.

摘要翻译： 公开了一种在PMR头中形成写极的方法，其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加（ - ）电流或电压，在电镀溶液中去除全部或部分辅助层。 此后，以（+）电流电镀磁性材料以填充开口，并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化，导致对CoFeNi的粘附不良，以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面，可显着地减少电镀材料中的空隙。

公开(公告)号：US20110094888A1

公开(公告)日：2011-04-28

申请号：US12589599

申请日：2009-10-26

申请人： Chao-Peng Chen ,  Chien-Li Lin ,  Jas Chudasama ,  Situan Lam

发明人： Chao-Peng Chen ,  Chien-Li Lin ,  Jas Chudasama ,  Situan Lam

IPC分类号： C25D21/12 ,  C25D5/34 ,  C25D5/10

CPC分类号： C25D5/34 ,  C25D3/562 ,  C25D5/02 ,  C25D11/00

摘要： A method of rejuvenating a Ru plating seed layer during write pole fabrication in a PMR head is disclosed that involves forming an opening in a mold forming layer. A Ru seed layer is deposited by CVD within the opening and on a top surface of the mold forming layer. The substrate with the Ru seed layer is immersed in an acidic solution and an electric potential is applied for 1 to 2 minutes such that hydrogen is generated to reduce ruthenium oxides to Ru metal on the seed layer surface in an activation step. One or more surfactants are used to improve wettability of the Ru layer. The substrate is transferred directly to an electroplating solution without drying following the activation step to minimize exposure to oxygen that could regenerate oxides on the surface of the Ru layer. As a result, write pole voids and delamination are significantly reduced.

摘要翻译： 公开了一种在PMR头中的写磁极制造期间使Ru电镀种子层再生的方法，其涉及在模具成型层中形成开口。 通过CVD将Ru籽晶层沉积在模具形成层的开口内和顶表面上。 将具有Ru籽晶层的衬底浸入酸性溶液中并施加电位1至2分钟，使得在活化步骤中产生氢以将氧化钌还原为种子层表面上的Ru金属。 使用一种或多种表面活性剂来改善Ru层的润湿性。 在活化步骤之后，将底物直接转移到电镀溶液中，而不会干燥以使暴露于可再生Ru层表面上的氧化物的氧暴露最小化。 结果，写入极空隙和分层显着减少。

公开(公告)号：US09103012B2

公开(公告)日：2015-08-11

申请号：US12931854

申请日：2011-02-11

申请人： Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

发明人： Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

IPC分类号： C25D5/34 ,  C23C2/02 ,  C23C14/58 ,  C25D5/02 ,  G11B5/17 ,  C23F1/12

CPC分类号： C23F1/12 ,  C23C2/02 ,  C23C14/5873 ,  C25D5/022 ,  C25D5/34 ,  G11B5/17

摘要： A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

摘要翻译： 公开了一种在镀覆工艺期间激活铜籽晶层的方法，其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸，乳酸，柠檬酸，尿酸，草酸或甲酸，其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻，但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中，将弱酸/水蒸汽施加到旋转碗中的基底上，然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高，实现了大量的成本节约。

公开(公告)号：US20120205344A1

公开(公告)日：2012-08-16

申请号：US12931854

申请日：2011-02-11

申请人： Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

发明人： Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

IPC分类号： C23F1/18 ,  C25D5/34 ,  C25D5/02

CPC分类号： C23F1/12 ,  C23C2/02 ,  C23C14/5873 ,  C25D5/022 ,  C25D5/34 ,  G11B5/17

摘要： A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

摘要翻译： 公开了一种在镀覆工艺期间激活铜籽晶层的方法，其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸，乳酸，柠檬酸，尿酸，草酸或甲酸，其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻，但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中，将弱酸/水蒸汽施加到旋转碗中的基底上，然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高，实现了大量的成本节约。

公开(公告)号：US08603348B2

公开(公告)日：2013-12-10

申请号：US12930754

申请日：2011-01-14

申请人： Chao-Peng Cheng ,  Chih-I Yang ,  Jas Chudasama ,  William Stokes ,  Chien-Li Lin ,  David Wagner

发明人： Chao-Peng Cheng ,  Chih-I Yang ,  Jas Chudasama ,  William Stokes ,  Chien-Li Lin ,  David Wagner

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

摘要翻译： 公开了一种在垂直磁记录头制造期间去除主极层周围的氧化铝层的方法。 氧化铝蚀刻顺序包括将衬底浸入用惰性气体吹扫的一系列水溶液中以除去氧气，从而避免主极的腐蚀。 最初，将基底浸泡并在去离子（DI）水中加热。 一旦加热，将基底浸入约80℃和pH 10.5的蚀刻浴中。 浴化学优选基于Na 2 CO 3和NaHCO 3，并且N 2吹扫改善蚀刻均匀性并减少残余物。 此后，将基板在室温至80℃的第二DI水浴中冲洗，最后在干燥前进行快速倾倒冲洗。 可以通过具有多个开口并且靠近浴容器的底部定位的吹扫板将惰性气体，优选N 2引入水溶液中。

公开(公告)号：US20120181181A1

公开(公告)日：2012-07-19

申请号：US12930754

申请日：2011-01-14

申请人： Chao-Peng Cheng ,  Chih-I Yang ,  Jas Chudasama ,  William Stokes ,  Chien-Li Lin ,  David Wagner

发明人： Chao-Peng Cheng ,  Chih-I Yang ,  Jas Chudasama ,  William Stokes ,  Chien-Li Lin ,  David Wagner

IPC分类号： G11B5/187 ,  B08B7/00

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

摘要翻译： 公开了一种在垂直磁记录头制造期间去除主极层周围的氧化铝层的方法。 氧化铝蚀刻顺序包括将衬底浸入用惰性气体吹扫的一系列水溶液中以除去氧气，从而避免主极的腐蚀。 最初，将基底浸泡并在去离子（DI）水中加热。 一旦加热，将基底浸入约80℃和pH 10.5的蚀刻浴中。 浴化学优选基于Na 2 CO 3和NaHCO 3，并且N 2吹扫改善蚀刻均匀性并减少残余物。 此后，将基板在室温至80℃的第二DI水浴中冲洗，最后在干燥前进行快速倾倒冲洗。 可以通过具有多个开口并且靠近浴容器的底部定位的吹扫板将惰性气体，优选N 2引入水溶液中。

公开(公告)号：US5920980A

公开(公告)日：1999-07-13

申请号：US810060

申请日：1997-03-05

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11B5/42

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.

摘要翻译： 软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。 为了实践该方法，首先提供了一种衬底。 然后在衬底上形成软相邻层（SAL）。 然后在软相邻层（SAL）上形成介电层。 然后形成至少部分地使电介质层与磁阻（MR）层接触，其中软相邻层（SAL）和电介质层是平面的。 该方法考虑了通过该方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US06577477B1

公开(公告)日：2003-06-10

申请号：US09774415

申请日：2001-02-01

申请人： Chien-Li Lin

发明人： Chien-Li Lin

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/302

摘要： A longitudinal bias structure for use in a GMR device is described. Improved magnetic properties of the bias structure are achieved by inserting an extra layer between the seed layer and the bias layer. This layer has lattice constants that are intermediate between those of the seed and bias layers thereby improving the crystallinity of the latter. Specifically, a layer of chromium-cobalt-tantalum is inserted between a seed layer of chromium, or chromium-titanium, and a hard magnetic (bias) layer of cobalt-chromium-platinum or cobalt-platinum. About 20 Angstroms is optimum for the thickness of this layer. Data is presented showing that significant improvements in coercivity and hysteresis loop squareness are obtained.

摘要翻译： 描述了用于GMR装置的纵向偏置结构。 通过在种子层和偏置层之间插入额外的层来实现偏置结构的改进的磁性能。 该层具有在种子和偏压层之间中间的晶格常数，从而提高后者的结晶度。 具体地说，将铬 - 钴 - 钽层插入在铬或铬 - 钛的种子层和钴 - 铬 - 铂或钴 - 铂的硬磁（偏压）层之间。 约20埃是该层厚度的最佳选择。 提供的数据显示矫顽力和磁滞回线矩形度的显着改善。

公开(公告)号：US6091589A

公开(公告)日：2000-07-18

申请号：US320756

申请日：1999-05-27

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

IPC分类号： G01R33/09 ,  G11B5/39 ,  G01B7/14

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.

摘要翻译： 在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。 形成在衬底上的是软相邻层（SAL）。 另外，形成在软相邻层（SAL）上的是电介质层。 最后，至少部分地形成在电介质层上的是磁阻（MR）层。 在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。 此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。