公开(公告)号：US20090017222A1

公开(公告)日：2009-01-15

申请号：US12006188

申请日：2007-12-31

申请人： Charles N. Dornfest ,  Deepak Upadhyaya ,  William John Boardman ,  Karthik Boinapally

发明人： Charles N. Dornfest ,  Deepak Upadhyaya ,  William John Boardman ,  Karthik Boinapally

IPC分类号： H05H1/24 ,  H05H1/00

CPC分类号： C23C16/26 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/515

摘要： Plasma Enhanced Bonding (PEB) during a coating process is used to improve both adhesion and corrosion resistance of the resulting coating. New interfacial compounds may be formed, offering the increased resistance to corrosion, as well as enhanced bonding to the workpiece being coated and any subsequently formed layer, such as diamond-like carbon. In one embodiment, the PEB processing is employed during coating of at least one interior surface of the workpiece, which may be a pipe. In a first step, a thin film is deposited. Then, the film is exposed to a high energy etch-back plasma. This two-step cycle of depositing a film and then providing bombardment of the film may be repeated a number of times. Typically, the deposition step of the cycle is much shorter than the bombardment step.

公开(公告)号：US07629031B2

公开(公告)日：2009-12-08

申请号：US12006188

申请日：2007-12-31

申请人： Charles N. Dornfest ,  Deepak Upadhyaya ,  William John Boardman ,  Karthik Boinapally

发明人： Charles N. Dornfest ,  Deepak Upadhyaya ,  William John Boardman ,  Karthik Boinapally

IPC分类号： H05H1/00

CPC分类号： C23C16/26 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/515

摘要： Plasma Enhanced Bonding (PEB) during a coating process is used to improve both adhesion and corrosion resistance of the resulting coating. New interfacial compounds may be formed, offering the increased resistance to corrosion, as well as enhanced bonding to the workpiece being coated and any subsequently formed layer, such as diamond-like carbon. In one embodiment, the PEB processing is employed during coating of at least one interior surface of the workpiece, which may be a pipe. In a first step, a thin film is deposited. Then, the film is exposed to a high energy etch-back plasma. This two-step cycle of depositing a film and then providing bombardment of the film may be repeated a number of times. Typically, the deposition step of the cycle is much shorter than the bombardment step.

摘要翻译： 涂层过程中的等离子体增强粘合（PEB）用于改善所得涂层的粘附性和耐腐蚀性。 可以形成新的界面化合物，提供增加的耐腐蚀性，以及增强与待涂覆的工件和任何随后形成的层，例如类金刚石碳的结合。 在一个实施例中，在涂覆工件的至少一个内表面时采用PEB处理，其可以是管道。 在第一步中，沉积薄膜。 然后，将该膜暴露于高能蚀刻等离子体。 沉积薄膜然后提供膜的轰击的两步循环可以重复多次。 通常，循环的沉积步骤比轰击步骤短得多。

公开(公告)号：US08715789B2

公开(公告)日：2014-05-06

申请号：US12970183

申请日：2010-12-16

申请人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

发明人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

IPC分类号： C23C16/00 ,  C23C16/04 ,  C23C16/503 ,  C23C16/26 ,  H01J37/32

CPC分类号： H01J37/32568 ,  C23C16/045 ,  C23C16/26 ,  C23C16/503 ,  H01J37/32394 ,  H01J37/32449 ,  H01J37/32577 ,  H01J37/32596 ,  Y10T428/13

摘要： A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.

摘要翻译： 公开了一种用于将等离子体增强的化学气相沉积到中空管状高纵横比工件的内部区域的方法和装置。 多个阳极以轴向间隔布置的方式设置在工件的内部。 将工艺气体引入该区域。 各个单独的DC或脉冲DC偏压被施加到每个阳极。 偏压将工艺气体激发成等离子体。 工件被偏压在空心阴极装置中。 在内部区域中控制压力以维持等离子体。 细长的支撑管布置阳极，并接收处理气体管。 电流分流器为每个阳极提供相应选择的总电流比例。 一个或多个切口扩散器或室扩散器可以扩散处理气体或等离子体调节气体。 可以使用各种手段来控制等离子体阻抗和分布。

公开(公告)号：US20090017230A1

公开(公告)日：2009-01-15

申请号：US12218119

申请日：2008-07-11

申请人： Andrew W. Tudhope ,  Thomas B. Casserly ,  Karthik Boinapally ,  Deepak Upadhyaya ,  William J. Boardman

发明人： Andrew W. Tudhope ,  Thomas B. Casserly ,  Karthik Boinapally ,  Deepak Upadhyaya ,  William J. Boardman

IPC分类号： C23C16/513

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/26 ,  C23C16/515 ,  Y10T117/10 ,  Y10T117/1004

摘要： Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

摘要翻译： 通过使用含锗前驱体和空心阴极技术，在形成外层之前，直接在工件的表面上形成第一层，例如金刚石碳（DLC）层，在涂层中实现增强的耐腐蚀性 ）。 锗或锗碳化物前体的使用减少了膜应力，并且能够增加随后形成的DLC的厚度。 锗掺入也降低了层的孔隙率。 在一个实施方案中，在DLC之后添加含有锗的盖层，以进一步降低涂层对顶部化学渗透的敏感性。

公开(公告)号：US08394197B2

公开(公告)日：2013-03-12

申请号：US12218119

申请日：2008-07-11

申请人： Andrew W. Tudhope ,  Thomas B. Casserly ,  Karthik Boinapally ,  Deepak Upadhyaya ,  William J. Boardman

发明人： Andrew W. Tudhope ,  Thomas B. Casserly ,  Karthik Boinapally ,  Deepak Upadhyaya ,  William J. Boardman

IPC分类号： C30B28/14

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/26 ,  C23C16/515 ,  Y10T117/10 ,  Y10T117/1004

摘要： Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

公开(公告)号：US20110151141A1

公开(公告)日：2011-06-23

申请号：US12970183

申请日：2010-12-16

申请人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

发明人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

IPC分类号： C23C16/503 ,  C23C16/455 ,  C23C16/458 ,  C23C16/515 ,  C23C16/52 ,  C23C16/28

CPC分类号： H01J37/32568 ,  C23C16/045 ,  C23C16/26 ,  C23C16/503 ,  H01J37/32394 ,  H01J37/32449 ,  H01J37/32577 ,  H01J37/32596 ,  Y10T428/13

摘要： A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.

摘要翻译： 公开了一种用于将等离子体增强的化学气相沉积到中空管状高纵横比工件的内部区域的方法和装置。 多个阳极以轴向间隔布置的方式设置在工件的内部。 将工艺气体引入该区域。 各个单独的DC或脉冲DC偏压被施加到每个阳极。 偏压将工艺气体激发成等离子体。 工件被偏压在空心阴极装置中。 在内部区域中控制压力以维持等离子体。 细长的支撑管布置阳极，并接收处理气体管。 电流分流器为每个阳极提供相应选择的总电流比例。 一个或多个切口扩散器或室扩散器可以扩散处理气体或等离子体调节气体。 可以使用各种手段来控制等离子体阻抗和分布。