公开(公告)号：US6121130A

公开(公告)日：2000-09-19

申请号：US192338

申请日：1998-11-16

申请人： Chee Tee Chua ,  Yuan-Ping Lee ,  Mei Sheng Zhou ,  Lap Chan

发明人： Chee Tee Chua ,  Yuan-Ping Lee ,  Mei Sheng Zhou ,  Lap Chan

IPC分类号： H01L21/268 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768 ,  H01L21/469

CPC分类号： H01L21/76825 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/268 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76834

摘要： A process for curing low-k spin-on dielectric layers based on alkyl silsesquioxane polymers by laser scanning is described wherein curing is achieved by both photothermal and photochemical mechanisms. The layers are deposited by spin deposition, dried and cured by raster scanning with a pulsed laser at energies between 0.1 and 1 Joules/cm.sup.2. Because the laser causes heating of the layer, a nitrogen jet is applied in the wake of the scanning laser beam to rapidly cool the layer and to inhibit oxidation and moisture absorption. The laser induced heating also assists in the discharge of moisture and by-products of the polymerization process. The laser operates at wavelengths between 200 and 400 nm. Insulative layers such as silicon oxide are sufficiently transparent at these so that oxide segments overlying the polymer layer do not inhibit the curing process. Implementation of the laser scanning feature is readily incorporated into an existing spin-on deposition and curing tool.

摘要翻译： 描述了通过激光扫描固化基于烷基倍半硅氧烷聚合物的低k自旋电介质层的方法，其中通过光热和光化学机理实现固化。 通过旋转沉积沉积这些层，通过用0.1至1焦耳/ cm2的能量的脉冲激光进行光栅扫描来干燥和固化。 因为激光引起层的加热，所以在扫描激光束之后施加氮气喷射以快速冷却层并抑制氧化和吸湿。 激光诱导加热还有助于排出水分和聚合过程的副产物。 激光器工作在200和400 nm之间的波长。 绝缘层例如氧化硅在这些处是足够透明的，使得覆盖聚合物层的氧化物段不会阻碍固化过程。 激光扫描特征的实现容易地并入现有的旋涂沉积和固化工具中。

公开(公告)号：US6009888A

公开(公告)日：2000-01-04

申请号：US73946

申请日：1998-05-07

申请人： Jian-Hui Ye ,  Yuan-Ping Lee ,  Mei-Sheng Zhou ,  Yong-Feng Lu

发明人： Jian-Hui Ye ,  Yuan-Ping Lee ,  Mei-Sheng Zhou ,  Yong-Feng Lu

IPC分类号： B08B7/00 ,  G03F7/42 ,  H01L21/311 ,  B08B7/04

CPC分类号： H01L21/31127 ,  B08B7/0042 ,  G03F7/423 ,  H01L21/31133

摘要： A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.

摘要翻译： 在将晶片浸入过氧二硫酸盐（S2O82-）/ HCl湿浴中并在晶片仍然浸没之后的氮化或多晶硅层的干蚀刻之后，从晶片剥离光致抗蚀剂和聚合物的方法， 激光。 该方法包括：（a）在半导体结构10上形成氮化硅层24和光致抗蚀剂图案28; （b）干蚀刻氮化硅层24，从而在光致抗蚀剂图案和氮化硅层上形成聚合物30，（c）将基底，光致抗蚀剂图案，聚合物30浸入液浴34中，该液槽34包括（1）过氧化二硫酸 （S2O82-），（2）HCl和（3）水; 并用UV激光照射光致抗蚀剂图案28和聚合物层30，从而除去光致抗蚀剂28和聚合物30。