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    PHOTOVOLTAIC CELL
    1.
    发明申请
    PHOTOVOLTAIC CELL 审中-公开
    光伏电池

    公开(公告)号：US20110284074A1

    公开(公告)日：2011-11-24

    申请号：US12891721

    申请日：2010-09-27

    申请人： Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Chien-Jen Chen ,  Han-Tu Lin ,  Shuo-Wei Liang

    发明人： Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Chien-Jen Chen ,  Han-Tu Lin ,  Shuo-Wei Liang

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/0747 ,  Y02E10/50

    摘要： A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.

    摘要翻译： 光伏电池包括第一掺杂单晶硅衬底，本征非晶硅层，第二掺杂非晶硅层，第一掺杂晶体Ge含量层和一对电极。 第一种掺杂单晶硅衬底具有前表面和后表面。 本征非晶硅层设置在前表面上。 第二类掺杂非晶硅层设置在本征非晶硅层上。 第一类型的掺杂结晶Ge含量层设置在后表面上。 该对电极分别电连接到第二类掺杂非晶硅层和第一掺杂结晶Ge含量层。

    SOLAR CELL AND METHOD OF MAKING THE SAME
    2.
    发明申请
    SOLAR CELL AND METHOD OF MAKING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20120097246A1

    公开(公告)日：2012-04-26

    申请号：US13074015

    申请日：2011-03-29

    申请人： Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Zhen-Cheng Wu ,  Shuo-Wei Liang ,  Jen-Chieh Chen ,  Chung-Wei Lai ,  Tsung-Pao Chen

    发明人： Chee-Wee Liu ,  Wei-Shuo Ho ,  Yen-Yu Chen ,  Chun-Yuan Ku ,  Zhen-Cheng Wu ,  Shuo-Wei Liang ,  Jen-Chieh Chen ,  Chung-Wei Lai ,  Tsung-Pao Chen

    IPC分类号： H01L31/036 ,  H01L31/20

    CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.

    摘要翻译： 太阳能电池包括晶体半导体衬底; 第一晶体半导体层; 非晶半导体层; 第一金属电极层和第二金属电极层。 晶体半导体衬底具有第一表面和第二表面，并且晶体半导体衬底具有第一掺杂型。 第一晶体半导体层设置在晶体半导体衬底的第一表面上，其中第一晶体半导体层具有与第一掺杂类型相反的第二掺杂型。 非晶半导体层设置在第一结晶半导体层上，非晶半导体层具有第二掺杂型。 第一金属电极层设置在非晶半导体层上。 第二金属电极层设置在晶体半导体衬底的第二表面上。

    POINT-CONTACT SOLAR CELL STRUCTURE
    3.
    发明申请
    POINT-CONTACT SOLAR CELL STRUCTURE 审中-公开
    点接触太阳能电池结构

    公开(公告)号：US20130087191A1

    公开(公告)日：2013-04-11

    申请号：US13341526

    申请日：2011-12-30

    申请人： Seow-Wei TAN ,  Yen-Yu Chen ,  Wei-Shuo Ho ,  Yu-Hung Huang ,  Chee-Wee Liu

    发明人： Seow-Wei TAN ,  Yen-Yu Chen ,  Wei-Shuo Ho ,  Yu-Hung Huang ,  Chee-Wee Liu

    IPC分类号： H01L31/0224 ,  H01L31/0216

    CPC分类号： H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A point-contact solar cell structure includes a semiconductor substrate, a front electrode, a first passivation layer, a second passivation layer, and a rear electrode. The semiconductor substrate includes an upper surface, a lower surface, and an emitter layer, a base layer, and a plurality of locally doped regions located between the upper surface and the lower surface. The plurality of locally doped regions is located on the lower surface at intervals. The second passivation layer is located on the lower surface, and has a plurality of openings disposed respectively corresponding to the locally doped regions. The rear electrode is located on one side of the second passivation layer opposite to the semiconductor substrate, and passes through the second passivation layer via the openings to contact the locally doped regions. The width of at least one opening corresponding to the front electrode is greater than that of the remaining openings.

    摘要翻译： 点接触太阳能电池结构包括半导体衬底，前电极，第一钝化层，第二钝化层和后电极。 半导体衬底包括位于上表面和下表面之间的上表面，下表面和发射极层，基底层和多个局部掺杂区域。 多个局部掺杂区域间隔地位于下表面上。 第二钝化层位于下表面，并且具有分别对应于局部掺杂区域设置的多个开口。 后电极位于与半导体衬底相对的第二钝化层的一侧上，并且经由开口穿过第二钝化层以接触局部掺杂区域。 对应于前电极的至少一个开口的宽度大于其余开口的宽度。

    Method for photo-detecting and apparatus for the same
    5.
    发明授权
    Method for photo-detecting and apparatus for the same 有权
    光电检测方法及其设备

    公开(公告)号：US07579668B2

    公开(公告)日：2009-08-25

    申请号：US11875287

    申请日：2007-10-19

    申请人： Chee-Wee Liu ,  Chun-Hung Lai ,  Meng-kun Chen ,  Wei-Shuo Ho

    发明人： Chee-Wee Liu ,  Chun-Hung Lai ,  Meng-kun Chen ,  Wei-Shuo Ho

    IPC分类号： H01L31/06 ,  H01L27/148 ,  H01L29/768 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L31/103 ,  H01L27/1446

    摘要： A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

    摘要翻译： 提供了一种用于光电检测的方法及其装置。 用于光检测的装置包括第一P-N二极管和第二P-N二极管。 第一PN二极管具有第一PN结，其具有第一厚度，当被光照射时，第一PN信号产生第一电信号，并且第二PN二极管具有第二PN结，第二PN结具有第二厚度，第二PN 当光照射时产生信号。 第二厚度大于第一厚度，并且进行第一电信号和第二电信号的操作以获得第三电信号。

    SOLAR CELL AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20130312820A1

    公开(公告)日：2013-11-28

    申请号：US13602625

    申请日：2012-09-04

    申请人： Yen-Cheng HU ,  Wei-Shuo Ho ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

    发明人： Yen-Cheng HU ,  Wei-Shuo Ho ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

    IPC分类号： H01L31/0232 ,  H01L31/0236

    CPC分类号： H01L31/02168 ,  Y02E10/50

    摘要： A solar cell includes a semiconductor substrate and a first antireflective layer. The semiconductor substrate has a first-type semiconductor surface and a second-type semiconductor surface opposite to each other. The first antireflective layer includes a plurality of refraction convexes and a coverage layer. The refraction convexes are formed on the second-type semiconductor surface. Each refraction convex includes a first refraction part and a second refraction part. The first refraction parts are conformally coated with the respective second refraction parts, and the first refraction part is configured to have a refractive index greater than the refractive index of the second refraction part. The coverage layer is formed to cover the second-type semiconductor surface and the refraction convexes, and the coverage layer is configured to have a refractive index smaller than the refractive index of the second refraction part. A solar cell manufacturing method is also provided.

    摘要翻译： 太阳能电池包括半导体衬底和第一抗反射层。 半导体衬底具有彼此相对的第一类型半导体表面和第二类型半导体表面。 第一抗反射层包括多个折射凸部和覆盖层。 折射凸部形成在第二类半导体表面上。 每个折射凸包括第一折射部分和第二折射部分。 第一折射部分被共同地涂覆有相应的第二折射部分，并且第一折射部分被配置为具有大于第二折射部分的折射率的折射率。 覆盖层形成为覆盖第二类型的半导体表面和折射凸起，并且覆盖层被配置为具有小于第二折射部分的折射率的折射率。 还提供了一种太阳能电池的制造方法。