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1.发明授权Method of making a field emission electron source with random micro-tip structures 失效制备具有随机微尖端结构的场发射电子源的方法
公开(公告)号：US5628659A
公开(公告)日：1997-05-13
申请号：US427464
申请日：1995-04-24
申请人： Chenggang Xie , Nalin Kumar , Howard K. Schmidt
发明人： Chenggang Xie , Nalin Kumar , Howard K. Schmidt
CPC分类号： H01J9/025 , H01J2201/30426 , H01J2201/30457 , H01J2201/319
摘要： A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.
摘要翻译： 一种系统和方法可用于制造场致发射器件，其中发射极材料（例如铜）沉积在已沉积在衬底上的电阻层上。 使用两个离子束源。 第一离子束源指向诸如钼的靶材料，用于将钼溅射到发射极材料上。 第二离子束源用于蚀刻发射体材料以产生锥体或微尖端。 然后将诸如无定形金刚石的低功函数材料沉积在微尖端上。
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公开(公告)号：US08362295B2
公开(公告)日：2013-01-29
申请号：US12812169
申请日：2009-01-08
IPC分类号： C07C63/00 , C07C25/24 , C07C205/45 , C07C43/235 , C07C17/281 , C01B31/00
CPC分类号： C09K8/032 , B82Y30/00 , B82Y40/00 , C01B32/192 , C01B32/194 , C01B32/23 , C01B2204/04 , C01B2204/28 , C09K8/035 , C09K8/62 , Y10S977/734 , Y10S977/737 , Y10S977/738
摘要： Drilling fluids comprising graphenes and nanoplatelet additives and methods for production thereof are disclosed. Graphene includes graphite oxide, graphene oxide, chemically-converted graphene, and functionalized chemically-converted graphene. Derivatized graphenes and methods for production thereof are disclosed. The derivatized graphenes are prepared from a chemically-converted graphene through derivatization with a plurality of functional groups. Derivatization can be accomplished, for example, by reaction of a chemically-converted graphene with a diazonium species. Methods for preparation of graphite oxide are also disclosed.
摘要翻译： 公开了包含石墨烯和纳米血小板添加剂的钻井液及其生产方法。 石墨烯包括氧化石墨，氧化石墨烯，化学转化的石墨烯和官能化的化学转化的石墨烯。 公开了衍生化的石墨烯及其生产方法。 衍生的石墨烯通过具有多个官能团的衍生化由化学转化的石墨烯制备。 衍生化可以通过例如化学转化的石墨烯与重氮物质的反应来实现。 还公开了制备氧化石墨的方法。
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3.发明申请EMBEDDED ARRAYS OF VERTICALLY ALIGNED CARBON NANOTUBE CARPETS AND METHODS FOR MAKING THEM 有权垂直对准碳纳米管地毯的嵌入阵列及其制备方法公开(公告)号：US20120107597A1
公开(公告)日：2012-05-03
申请号：US12297115
申请日：2007-04-23
CPC分类号： C01B31/0206 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , H01L51/0048 , Y10T428/249924
摘要： According to some embodiments, the present invention provides a system and method for supporting a carbon nanotube array that involve an entangled carbon nanotube mat integral with the array, where the mat is embedded in an embedding material. The embedding material may be depositable on a carbon nanotube. A depositable material may be metallic or nonmetallic. The embedding material may be an adhesive material. The adhesive material may optionally be mixed with a metal powder. The embedding material may be supported by a substrate or self-supportive. The embedding material may be conductive or nonconductive. The system and method provide superior mechanical and, when applicable, electrical, contact between the carbon nanotubes in the array and the embedding material. The optional use of a conductive material for the embedding material provides a mechanism useful for integration of carbon nanotube arrays into electronic devices.
摘要翻译： 根据一些实施方案，本发明提供了一种用于支撑碳纳米管阵列的系统和方法，所述碳纳米管阵列涉及与所述阵列整合的缠结碳纳米管垫，其中所述垫嵌入嵌入材料中。 嵌入材料可以沉积在碳纳米管上。 可存放材料可以是金属或非金属的。 嵌入材料可以是粘合剂材料。 粘合剂材料可以任选地与金属粉末混合。 嵌入材料可以由衬底支撑或自支撑。 嵌入材料可以是导电的或非导电的。 该系统和方法在阵列中的碳纳米管和嵌入材料之间提供优异的机械性能，并且在适用时提供电气接触。 可选地使用用于嵌入材料的导电材料提供了用于将碳纳米管阵列集成到电子器件中的机制。
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公开(公告)号：US20100284898A1
公开(公告)日：2010-11-11
申请号：US12299634
申请日：2007-05-07
申请人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , Irene Morin Marek , Zhenning Gu , W. Carter Kittrell
发明人： Kirk J. Ziegler , Urs Rauwald , Robert H. Hauge , Howard K. Schmidt , Irene Morin Marek , Zhenning Gu , W. Carter Kittrell
IPC分类号： D01F9/12
CPC分类号： C01B32/176 , C01B32/174 , C01B2202/02 , C01B2202/28 , C01B2202/34
摘要： According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.
摘要翻译： 根据一些实施方案，本发明提供了利用电子束照射来获得例如碳纳米管样品的短碳纳米管的方法。 样品可以进行预处理，例如通过氧化。 预处理可能在纳米管的侧壁上引入缺陷。 该方法显示产生具有长度分布的纳米管，其大部分长度短于100μm。 此外，纳米管的中值长度在约20nm和约100nm之间。
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公开(公告)号：US20100140591A1
公开(公告)日：2010-06-10
申请号：US11910522
申请日：2007-02-02
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0048
摘要： A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.
摘要翻译： 用于形成纳米管电子器件的方法，纳米管电子器件的阵列，以及通过该方法形成的器件结构和器件结构的阵列。 本发明的各种方法允许从容易生长的SWNT地毯制造半导体和/或导电装置，而不需要制备图案化的生长通道，并利用这些毯子高度的自我控制性质来确保已知和受控的通道 与现有方法相比可靠的电子性能。
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公开(公告)号：US20090283405A1
公开(公告)日：2009-11-19
申请号：US12281444
申请日：2007-03-02
IPC分类号： C02F1/469
CPC分类号： B03C5/005 , B03C5/026 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B2202/02 , C01B2202/22 , Y10S977/742 , Y10S977/751
摘要： According to some embodiments, a method for separating a first fraction of a single wall carbon nanotubes and a second fraction of single wall carbon nanotubes includes, but is not limited to: flowing a solution comprising the nanotubes into a dielectrophoresis chamber; applying a DC voltage, in combination with an AC voltage, to the dielectrophoresis chamber; and collecting a first eluent from the dielectrophoresis chamber, wherein the first eluent comprises the first fraction and is depleted of the second fraction, wherein the first and second fractions differ by at least one of conductivity, diameter, length, and combinations thereof.
摘要翻译： 根据一些实施方案，用于分离单壁碳纳米管和第二部分单壁碳纳米管的第一部分的方法包括但不限于：将包含纳米管的溶液流动到介电电泳室中; 将DC电压与AC电压组合施加到介电电泳室; 以及从所述介电电泳腔室收集第一洗脱液，其中所述第一洗脱液包含所述第一馏分并且耗尽所述第二馏分，其中所述第一和第二馏分通过传导率，直径，长度及其组合中的至少一个而不同。
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公开(公告)号：US5354584A
公开(公告)日：1994-10-11
申请号：US59245
申请日：1993-05-07
申请人： Howard K. Schmidt
发明人： Howard K. Schmidt
CPC分类号： C23C16/278 , C23C14/48 , C23C16/27 , C23C16/271 , C23C16/44
摘要： A material growing by deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the material. This doping method will work well for any dopant that is substantially immobile in the material at the temperature necessary for deposition growth.
摘要翻译： 通过沉积生长的材料暴露于电离掺杂剂的低能量束。 离子束能量足以将掺杂剂注入材料的生长表面。 该掺杂方法对于在沉积生长所需的温度下在材料中基本上不可移动的任何掺杂剂都将很好地工作。
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8.发明授权Embedded arrays of vertically aligned carbon nanotube carpets and methods for making them 有权垂直排列的碳纳米管地毯的嵌入式阵列及其制造方法公开(公告)号：US09067791B2
公开(公告)日：2015-06-30
申请号：US12297115
申请日：2007-04-23
CPC分类号： C01B31/0206 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , H01L51/0048 , Y10T428/249924
摘要： According to some embodiments, the present invention provides a system and method for supporting a carbon nanotube array that involve an entangled carbon nanotube mat integral with the array, where the mat is embedded in an embedding material. The embedding material may be depositable on a carbon nanotube. A depositable material may be metallic or nonmetallic. The embedding material may be an adhesive material. The adhesive material may optionally be mixed with a metal powder. The embedding material may be supported by a substrate or self-supportive. The embedding material may be conductive or nonconductive. The system and method provide superior mechanical and, when applicable, electrical, contact between the carbon nanotubes in the array and the embedding material. The optional use of a conductive material for the embedding material provides a mechanism useful for integration of carbon nanotube arrays into electronic devices.
摘要翻译： 根据一些实施方案，本发明提供了一种用于支撑碳纳米管阵列的系统和方法，所述碳纳米管阵列涉及与所述阵列整合的缠结碳纳米管垫，其中所述垫嵌入嵌入材料中。 嵌入材料可以沉积在碳纳米管上。 可存放材料可以是金属或非金属的。 嵌入材料可以是粘合剂材料。 粘合剂材料可以任选地与金属粉末混合。 嵌入材料可以由衬底支撑或自支撑。 嵌入材料可以是导电的或非导电的。 该系统和方法在阵列中的碳纳米管和嵌入材料之间提供优异的机械性能，并且在适用时提供电气接触。 可选地使用用于嵌入材料的导电材料提供了用于将碳纳米管阵列集成到电子器件中的机制。
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公开(公告)号：US08763387B2
公开(公告)日：2014-07-01
申请号：US12853066
申请日：2010-08-09
申请人： Howard K. Schmidt
发明人： Howard K. Schmidt
IPC分类号： E21B43/26
CPC分类号： F03B13/06 , F02C6/16 , F03D9/17 , F03D9/255 , F03D9/28 , Y02E10/22 , Y02E10/46 , Y02E10/72 , Y02E60/15 , Y02E60/17 , Y02P90/50
摘要： Energy is stored by injecting fluid into a hydraulic fracture in the earth and producing the fluid hack while recovering power. The method is particularly adapted to storage of large amounts of energy such as in grid-scale electric energy systems. The hydraulic fracture may be formed and treated with resin so as to limit fluid loss and to increase propagation pressure.
摘要翻译： 能量通过将流体注入地球的水力裂缝并在回收功率的同时产生流体侵入而被储存。 该方法特别适用于存储大量的能量，例如电网规模的电能系统。 可以用树脂形成和处理水力破裂，以限制流体损失并增加传播压力。
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公开(公告)号：US08394664B2
公开(公告)日：2013-03-12
申请号：US11910522
申请日：2007-02-02
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0048
摘要： A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.
摘要翻译： 用于形成纳米管电子器件的方法，纳米管电子器件的阵列，以及通过该方法形成的器件结构和器件结构的阵列。 本发明的各种方法允许从容易生长的SWNT地毯制造半导体和/或导电装置，而不需要制备图案化的生长通道，并利用这些毯子高度的自我控制性质来确保已知和受控的通道 与现有方法相比可靠的电子性能。
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