公开(公告)号：US07153739B2

公开(公告)日：2006-12-26

申请号：US10721092

申请日：2003-11-26

申请人： Chang Rock Song ,  Sang Ho Woo ,  Dong Su Park ,  Cheol Hwan Park ,  Tae Hyeok Lee

发明人： Chang Rock Song ,  Sang Ho Woo ,  Dong Su Park ,  Cheol Hwan Park ,  Tae Hyeok Lee

IPC分类号： H01L21/8242

CPC分类号： H01L28/40 ,  H01L21/3144

摘要： The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a dielectric film. An interlayer insulating film is formed on a semiconductor substrate. A storage electrode is formed consisting of a doped polysilicon on the interlayer insulating film. A first oxide film is formed on the storage electrode that is subjected to a thermal treatment in an atmosphere containing an n-type impurity to implant the impurity into the first oxide film. A nitride film is formed on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film. A second oxide film is formed on the nitride film. A plate electrode is then formed on the second oxide film.

摘要翻译： 本发明公开了使用掺杂硅膜作为电极的半导体器件和氧化膜氮化物膜氧化膜作为电介质膜的电容器的制造方法。 在半导体基板上形成层间绝缘膜。 存储电极由层间绝缘膜上的掺杂多晶硅构成。 在包含n型杂质的气氛中进行热处理的存储电极上形成第一氧化物膜，以将杂质注入到第一氧化物膜中。 在第一氧化膜上形成氮化物膜，由此第一氧化膜中的杂质扩散到氮化物膜中。 在氮化膜上形成第二氧化膜。 然后在第二氧化膜上形成平板电极。

公开(公告)号：US07084072B2

公开(公告)日：2006-08-01

申请号：US10874983

申请日：2004-06-23

申请人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

发明人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/28141 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/1052 ,  H01L27/10873

摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底的单元区域和外围区域中形成栅极，在栅极和衬底上沉积缓冲氧化物层，退火所得衬底的结构，在缓冲氧化物上沉积氮化物间隔层 在所述氮化物间隔层上沉积氧化物间隔层，在所述衬底的周围区域形成氧化物间隔物，以及去除所述电池区域中剩余的氧化物间隔层。 在沉积缓冲氧化物层之后另外进行退火步骤，以改善界面表面特性和膜质量，从而防止在湿法浸渍过程中氧化物蚀刻剂渗入硅衬底。 防止在硅衬底中产生不必要的空隙。

公开(公告)号：US06964930B2

公开(公告)日：2005-11-15

申请号：US10739620

申请日：2003-12-18

申请人： Dong Su Park ,  Tae Hyeok Lee ,  Chang Rock Song ,  Cheol Hwan Park

发明人： Dong Su Park ,  Tae Hyeok Lee ,  Chang Rock Song ,  Cheol Hwan Park

IPC分类号： H01L21/318 ,  C23C16/02 ,  C23C16/34 ,  C23C16/56 ,  H01L21/20 ,  H01L21/306 ,  H01L21/314 ,  H01L29/51 ,  H01L29/78 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02247 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02052 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L29/513 ,  H01L29/518 ,  Y10S438/954

摘要： In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.

摘要翻译： 在制造电介质层时，提供已洗涤的半导体衬底。 第一氮化物膜通过将基板装载在第一炉中并对基板进行第一氮化物处理而形成。 通过将具有第一氮化物膜的衬底从第一炉中卸出并通过在衬底卸载的同时引入空气对衬底进行第一氮化物处理来形成第一氧化物膜。 通过将具有第一氧化物膜的衬底装载在第二炉中并对衬底进行第二氮化物处理来形成第二氮化物膜。 通过对第二氮化物膜的顶表面进行第二氧化物处理来形成第二氧化物膜。

公开(公告)号：US06797583B2

公开(公告)日：2004-09-28

申请号：US09982023

申请日：2001-10-19

申请人： Chang Rock Song

发明人： Chang Rock Song

IPC分类号： H01L2128

CPC分类号： H01L28/55 ,  H01L21/32115 ,  H01L28/60 ,  H01L28/75

摘要： A method of manufacturing a capacitor in semiconductor devices, the method comprising forming a silicon oxide film on a surface of a silicon substrate; forming a nitride film on said silicon oxide film; forming a contact hole; depositing a doped polysilicon layer; performing an etch-back process to remove a portion of said doped polysilicon layer; forming an ohmic contact layer over said doped polysilicon layer in said contact hole; forming an anti-diffusion film on said ohmic contact layer; forming a silicate glass film; forming a concave hole by etching a portion of said silicate glass film; forming a Ruthenium lower electrode on said internal wall of said concave hole; forming a BST dielectric film on said first Ruthenium electrode; crystallizing said BST dielectric film; forming an upper electrode on said BST dielectric film, thereby forming a capacitor; and performing a thermal treatment to stabilize said capacitor.

摘要翻译： 一种制造半导体器件中的电容器的方法，所述方法包括在硅衬底的表面上形成氧化硅膜; 在所述氧化硅膜上形成氮化物膜; 形成接触孔; 沉积掺杂多晶硅层; 执行回蚀处理以去除所述掺杂多晶硅层的一部分; 在所述接触孔中的所述掺杂多晶硅层上形成欧姆接触层; 在所述欧姆接触层上形成抗扩散膜; 形成硅酸盐玻璃膜; 通过蚀刻所述硅酸盐玻璃膜的一部分来形成凹孔; 在所述凹孔的所述内壁上形成钌下电极; 在所述第一钌电极上形成BST电介质膜; 结晶所述BST介电膜; 在所述BST电介质膜上形成上电极，从而形成电容器; 并进行热处理以稳定所述电容器。