公开(公告)号：US20120294018A1

公开(公告)日：2012-11-22

申请号：US13522129

申请日：2011-01-11

申请人： Cheol-Hyun Kim ,  Sung-Chul Park

发明人： Cheol-Hyun Kim ,  Sung-Chul Park

IPC分类号： F21V29/00 ,  B23P15/26

CPC分类号： F21V29/74 ,  F21K9/00 ,  F21S2/005 ,  F21S8/086 ,  F21W2131/103 ,  F21Y2115/10 ,  Y10T29/53113

摘要： The present invention relates to an LED illumination apparatus and a manufacturing method thereof. The LED illumination apparatus according to one embodiment of the present invention comprises: a body in which a heat sink including a plurality of heat radiation fins is formed in a first area of a bottom surface portion thereof and in which a light source loading area is formed in a second area different from the first area in the bottom surface portion; a substrate loaded on the light source loading area of the body; and an LED light source module provided on the substrate. According to the present invention, since the heat sink is formed in the bottom surface portion of the body, the reduction of heat radiation efficiency in the LED illumination apparatus due to dust or excrement of birds and the like can be minimized. In addition, since the body is manufactured by extrusion molding, the manufacturing cost of the LED illumination apparatus can be remarkably reduced in comparison with prior die casting. In addition, since the length of the body can be adjusted arbitrarily, the present invention can be designed in various shapes according to a desired heat radiation area.

摘要翻译： 本发明涉及一种LED照明装置及其制造方法。 根据本发明的一个实施例的LED照明装置包括：主体，其中在其底表面部分的第一区域中形成有包括多个散热片的散热片，其中形成有光源装载区域 在与所述底面部的所述第一区域不同的第二区域中， 负载在身体的光源装载区域上的衬底; 以及设置在基板上的LED光源模块。 根据本发明，由于在本体的底面部形成有散热器，所以能够将由于鸟类等的尘埃或排泄物等导致的LED照明装置的散热效率的降低化。 此外，由于通过挤出成型制造了本体，因此与现有的压铸相比，LED照明装置的制造成本可以显着降低。 此外，由于可以任意调整主体的长度，所以可以根据期望的散热面积设计各种形状的本发明。

公开(公告)号：US20120162905A1

公开(公告)日：2012-06-28

申请号：US13384741

申请日：2010-07-08

申请人： Cheol-Hyun Kim ,  Sung-Chul Park

发明人： Cheol-Hyun Kim ,  Sung-Chul Park

IPC分类号： H05K7/20

CPC分类号： B04C3/00 ,  B04C9/00 ,  B04C2009/005 ,  G06F1/20 ,  H05K7/20172

摘要： Disclosed is a fan module used in electronic equipment and the like. The fan module of the present invention comprises: a dust-collecting part which has an air-suction port and an air-discharge port, and which has a rotational region forming a passage linking the air-suction port to the air-discharge port and has a dust-collection box for collecting dust and detritus rotating in the rotational region; and a fan which is joined to one side of the dust-collecting part and makes air flow into the rotational region. The present invention can use centrifugal force to effectively remove various forms of dust and detritus contained in the air which flows into the casings of electronic equipment, household appliances and the like due to the action of a fan. Further, since a filter is not used, there is the advantage that the cooling efficiency is not reduced by the dust collection as the smooth flow of the air being sucked in is not disturbed. Further, from the long-term point of view, the thermal efficiency of electronic equipment and the like can be substantially improved as the amount of dust and detritus accumulated inside electronic equipment is minimised.

摘要翻译： 公开了用于电子设备等的风扇模块。 本发明的风扇模块包括：集尘部，其具有吸气口和排气口，并且具有形成将吸气口与排气口连接的通路的旋转区域和 具有用于收集在旋转区域中旋转的灰尘和碎屑的集尘箱; 以及风扇，其与集尘部的一侧接合并使空气流入旋转区域。 本发明可以使用离心力来有效地去除由于风扇的作用而流入电子设备，家用电器等的壳体中的空气中所含的各种形式的灰尘和碎屑。 此外，由于不使用过滤器，所以具有不吸收空气的平滑流动而不会因集尘而降低冷却效率的优点。 此外，从长期的观点来看，随着电子设备内积聚的灰尘和碎屑的量最小化，电子设备等的热效率可以显着提高。

公开(公告)号：US08619423B2

公开(公告)日：2013-12-31

申请号：US13384741

申请日：2010-07-08

申请人： Cheol-Hyun Kim ,  Sung-Chul Park

发明人： Cheol-Hyun Kim ,  Sung-Chul Park

IPC分类号： H05K7/20

CPC分类号： B04C3/00 ,  B04C9/00 ,  B04C2009/005 ,  G06F1/20 ,  H05K7/20172

摘要： Disclosed is a fan module used in electronic equipment and the like. The fan module of the present invention includes a dust-collecting part which has an air’-suction port and an air-discharge port, and which has a rotational region forming a passage linking the air-suction port to the air-discharge port and has a dust-collection box for collecting dust and detritus rotating in the rotational region; and a fan which is joined to one side of the dust-collecting part and makes air flow into the rotational region. The present invention can use centrifugal force to effectively remove various forms of dust and detritus contained in the air which flows into the casings of electronic equipment, household appliances and the like due to the action of a fan. Further, since a filter is not used, there is the advantage that the cooling efficiency is not reduced by the dust collection as the smooth flow of the air being sucked in is not disturbed. Further, from the long-term point of view, the thermal efficiency of electronic equipment and the like can be substantially improved as the amount of dust and detritus accumulated inside electronic equipment is minimized.

摘要翻译： 公开了用于电子设备等的风扇模块。 本发明的风扇模块包括具有空气吸入口和排气口的集尘部，其具有形成将空气吸入口与排气口连接的通路的旋转区域和 具有用于收集在旋转区域中旋转的灰尘和碎屑的集尘箱; 以及风扇，其与集尘部的一侧接合并使空气流入旋转区域。 本发明可以使用离心力来有效地去除由于风扇的作用而流入电子设备，家用电器等的壳体中的空气中所含的各种形式的灰尘和碎屑。 此外，由于不使用过滤器，所以具有不吸收空气的平滑流动而不会因集尘而降低冷却效率的优点。 此外，从长期的观点来看，随着电子设备内积聚的灰尘和碎屑的量最小化，电子设备等的热效率可以显着提高。

公开(公告)号：US07598139B2

公开(公告)日：2009-10-06

申请号：US11896560

申请日：2007-09-04

申请人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

发明人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11546

摘要： A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type formed in the substrate and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration, and a nonvolatile memory cell formed on the second well. A device is described comprising four wells of various conductivity types with a nonvolatile memory cell formed on the second well. A device is described comprising a plurality of wells for isolating transistors of a plurality of voltage ranges, wherein each one of the plurality of wells contains at least one transistor of a particular voltage range, and wherein transistors of only one of the plurality of voltage ranges are within each of the plurality of wells. A method is described of isolating transistors of a first voltage range from transistors of another voltage range, comprising forming a first well to hold transistors only of a first particular voltage range, and forming a second well to hold transistors only of a second particular voltage range.

摘要翻译： 描述了一种器件，其包括具有第一掺杂剂浓度的第一导电类型的衬底，在衬底中形成的第一阱，在衬底中形成并且比第一阱更深的第一导电类型的第二阱，第二阱具有 比第一掺杂剂浓度高的掺杂剂浓度，以及形成在第二阱上的非易失性存储单元。 描述了一种装置，其包括具有形成在第二阱上的非易失性存储单元的各种导电类型的四个阱。 描述了一种器件，其包括用于隔离多个电压范围的晶体管的多个阱，其中多个阱中的每一个阱包含特定电压范围的至少一个晶体管，并且其中仅一个电压范围的晶体管 在多个孔的每一个内。 描述了一种将第一电压范围的晶体管与另一电压范围的晶体管隔离的方法，包括形成第一阱以仅保持第一特定电压范围的晶体管，以及形成第二阱以仅将晶体管保持在第二特定电压范围 。

公开(公告)号：US07495281B2

公开(公告)日：2009-02-24

申请号：US11488983

申请日：2006-07-19

申请人： Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

发明人： Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

IPC分类号： H01L29/788

CPC分类号： H01L29/42328 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7883

摘要： In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating gate and a control gate are stacked. The sidewall selection gates are in a spacer form. Since the sidewall selection gates are in a spacer form on the sidewall of the floating gate, the degree of integration of cells can be improved. Additionally, since the side wall selection gates are disposed on both sidewalls of the floating gate, a voltage applied from a bit line and a common source line can be controlled and thus conventional writing/erasing errors can be prevented. Therefore, distribution of threshold voltage can be improved.

摘要翻译： 在非易失性存储器件及其形成和操作它的方法中，当浮置栅极和控制栅极堆叠时，一个存储器晶体管包括覆盖浮置栅极的两个侧壁的侧壁选择栅极。 侧壁选择门是间隔件形式。 由于侧壁选择栅极在浮动栅极的侧壁上是间隔物形式，所以可以提高电池的集成度。 此外，由于侧壁选择栅极设置在浮置栅极的两个侧壁上，所以可以控制从位线和公共源极线施加的电压，因此可以防止常规的写入/擦除错误。 因此，可以提高阈值电压的分布。

公开(公告)号：US20060079045A1

公开(公告)日：2006-04-13

申请号：US11242209

申请日：2005-10-03

申请人： Jae-Hwang Kim ,  Seung-Beom Yoon ,  Kwang-Wook Koh ,  Chang-Hun Lee ,  Sung-Ho Kim ,  Sung-Chul Park ,  Ju-Ri Kim

发明人： Jae-Hwang Kim ,  Seung-Beom Yoon ,  Kwang-Wook Koh ,  Chang-Hun Lee ,  Sung-Ho Kim ,  Sung-Chul Park ,  Ju-Ri Kim

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation layers and an active region, a pair of selection gates interposed between the control gates to cross the device isolation layers and the active region and a floating gate and an intergate dielectric pattern stacked sequentially between the control gates and the active region The EEPROM device further includes a gate insulation layer of a memory transistor interposed between the floating gate and the active region and a tunnel insulation layer thinner than the gate insulation layer of the memory transistor and a gate insulation layer of a selection transistor interposed between the selection gates and the active region. The tunnel insulation layer is aligned at one side adjacent to the floating gate.

公开(公告)号：US11561038B2

公开(公告)日：2023-01-24

申请号：US16881185

申请日：2020-05-22

申请人： Sung-Chul Park ,  Nam-Gyu Park

发明人： Sung-Chul Park ,  Nam-Gyu Park

IPC分类号： F25D21/04 ,  A01F25/16 ,  A23B9/10 ,  E04H7/24 ,  F25D11/00 ,  F25D21/14

摘要： The present invention relates to a grain refrigerator including a housing having a grain storage space formed thereon to discharge grains stored therein, a fixing rod located at the center of the inside lower portion of the housing, dew condensation prevention means fixed to the fixing rod, a support plate located on a top periphery of the dew condensation prevention means, an evaporator disposed on the support plate to generate cool air, and a cooling tube disposed on a top periphery of the support plate on the outside of the evaporator to cool the grains, wherein a first pipe and a second pipe connected to the lower portion of the evaporator pass through a through hole of the support plate and a first drain hole of the dew condensation prevention means and are thus exposed to the outside of the housing.

公开(公告)号：US08236699B2

公开(公告)日：2012-08-07

申请号：US13021842

申请日：2011-02-07

申请人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Chen

发明人： Byung-Goo Jeon ,  Sung-Chul Park ,  Nikki Edleman ,  Alois Gutmann ,  Fang Chen

IPC分类号： H01L21/311

CPC分类号： H01L21/76804 ,  H01L21/31116 ,  H01L22/26

摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

摘要翻译： 提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比 以扩大接触孔顶部附近的临时内径。

公开(公告)号：US07642606B2

公开(公告)日：2010-01-05

申请号：US11633948

申请日：2006-12-05

申请人： Sung-Chul Park

发明人： Sung-Chul Park

IPC分类号： H01L29/76

CPC分类号： G11C16/0408 ,  H01L27/115 ,  H01L27/11568

摘要： A memory cell of a non-volatile memory device, comprises: a select transistor gate of a select transistor on a substrate, the select transistor gate comprising: a gate dielectric pattern; and a select gate on the gate dielectric pattern; first and second memory cell transistor gates of first and second memory cell transistors on the substrate at opposite sides of the select transistor, each of the first and second memory cell transistor gates comprising: a tunnel insulating layer pattern; a charge storage layer pattern on the tunnel insulating layer pattern; a blocking insulating layer pattern on the charge storage layer pattern; and a control gate on the blocking insulating layer pattern; first and second floating junction regions in the substrate between the select transistor gate and the first and second memory cell transistor gates respectively; and first and second drain regions in the substrate at sides of the first and second memory cell transistor gates respectively opposite the first and second floating junction regions respectively. Methods of formation thereof are also provided.

摘要翻译： 非易失性存储器件的存储单元包括：在衬底上的选择晶体管的选择晶体管栅极，所述选择晶体管栅极包括：栅极电介质图案; 和栅极电介质图案上的选择栅极; 所述第一和第二存储单元晶体管栅极在所述选择晶体管的相对侧的所述衬底上的第一和第二存储单元晶体管，所述第一和第二存储单元晶体管栅极中的每一个包括：隧道绝缘层图案; 隧道绝缘层图案上的电荷存储层图案; 电荷存储层图案上的阻挡绝缘层图案; 和阻挡绝缘层图案上的控制栅极; 分别在选择晶体管栅极和第一和第二存储单元晶体管栅极之间的衬底中的第一和第二浮置结区域; 以及分别与第一和第二浮置结区相对的第一和第二存储单元晶体管栅极侧的衬底中的第一和第二漏极区。 还提供了其形成方法。

公开(公告)号：US20070247887A1

公开(公告)日：2007-10-25

申请号：US11633948

申请日：2006-12-05

申请人： Sung-Chul Park

发明人： Sung-Chul Park

IPC分类号： G11C5/06 ,  G11C16/04 ,  G11C11/34

CPC分类号： G11C16/0408 ,  H01L27/115 ,  H01L27/11568

摘要： A memory cell of a non-volatile memory device, comprises: a select transistor gate of a select transistor on a substrate, the select transistor gate comprising: a gate dielectric pattern; and a select gate on the gate dielectric pattern; first and second memory cell transistor gates of first and second memory cell transistors on the substrate at opposite sides of the select transistor, each of the first and second memory cell transistor gates comprising: a tunnel insulating layer pattern; a charge storage layer pattern on the tunnel insulating layer pattern; a blocking insulating layer pattern on the charge storage layer pattern; and a control gate on the blocking insulating layer pattern; first and second floating junction regions in the substrate between the select transistor gate and the first and second memory cell transistor gates respectively; and first and second drain regions in the substrate at sides of the first and second memory cell transistor gates respectively opposite the first and second floating junction regions respectively. Methods of formation thereof are also provided.

摘要翻译： 非易失性存储器件的存储单元包括：在衬底上的选择晶体管的选择晶体管栅极，所述选择晶体管栅极包括：栅极电介质图案; 和栅极电介质图案上的选择栅极; 所述第一和第二存储单元晶体管栅极在所述选择晶体管的相对侧的所述衬底上的第一和第二存储单元晶体管，所述第一和第二存储单元晶体管栅极中的每一个包括：隧道绝缘层图案; 隧道绝缘层图案上的电荷存储层图案; 电荷存储层图案上的阻挡绝缘层图案; 和阻挡绝缘层图案上的控制栅极; 分别在选择晶体管栅极和第一和第二存储单元晶体管栅极之间的衬底中的第一和第二浮置结区域; 以及分别与第一和第二浮置结区相对的第一和第二存储单元晶体管栅极侧的衬底中的第一和第二漏极区。 还提供了其形成方法。