公开(公告)号：US5875026A

公开(公告)日：1999-02-23

申请号：US763752

申请日：1996-12-11

申请人： Cheol-Jung Kim ,  Kwang-Suk Kim

发明人： Cheol-Jung Kim ,  Kwang-Suk Kim

IPC分类号： G01J1/06 ,  G01J1/42 ,  G01J1/28 ,  G01J3/46

CPC分类号： G01J1/42 ,  G01J1/06

摘要： A method and system is disclosed in which the local variation of an extended radiation source is monitored with single-element detector. The chromatic aberration of the imaging optics induces the different transmittance curves for different wavelengths, and the different shape in the transmittance curve is used as a spatial filter which is multiplied to the chromatic intensity profile of the extended radiation source to detect the local variation in the intensity profile of the extended radiation source. The signal processing of the chromatic signals is implemented to detect the size variation and the environmental effects on the extended radiation source. A fiber is also used for remote operation.

摘要翻译： 公开了一种方法和系统，其中利用单元件检测器监测扩展辐射源的局部变化。 成像光学器件的色差引起不同波长的不同透射率曲线，并且将透射率曲线中的不同形状用作空间滤波器，该空间滤波器与扩展辐射源的色度分布相乘以检测扩展辐射源中的局部变化 扩展辐射源的强度分布。 实施彩色信号的信号处理以检测尺寸变化和对扩展辐射源的环境影响。 光纤也用于远程操作。

公开(公告)号：US5661745A

公开(公告)日：1997-08-26

申请号：US455415

申请日：1995-05-31

申请人： Cheol-Jung Kim ,  Jung-Moog Kim ,  Kwang-Suk Kim

发明人： Cheol-Jung Kim ,  Jung-Moog Kim ,  Kwang-Suk Kim

IPC分类号： H01S3/10 ,  H01S3/092 ,  H01S3/091

CPC分类号： H01S3/092

摘要： A method for generating high peak power pulses in lamp pumped continuous lasers by current mixing is disclosed, in which three kinds of oscillations, i.e., pure continuous wave laser oscillation, pure pulse laser oscillation and mixed laser oscillation of continuous wave and pulse lasers are attained without replacing any internal components of the laser. The current mixing is implemented by combining a high peak pulse current from pulse mode power supply and a DC current from the continuous wave laser power supply directly with isolating diodes, whereby a high peak power pulse equivalent to several scores of times the output of a continuous wave laser is simultaneously obtained.

摘要翻译： 公开了一种通过电流混合在灯泵浦连续激光器中产生高峰值功率脉冲的方法，其中获得连续波和脉冲激光器的纯连续波激光振荡，纯脉冲激光振荡和混合激光振荡三种振荡 而不用替换激光器的任何内部部件。 目前的混合是通过将来自脉冲模式电源的高峰值脉冲电流和来自连续波激光器电源的直流电流直接与隔离二极管组合来实现的，由此产生相当于连续波形输出数十倍的高峰值功率脉冲 同时获得波激光。

公开(公告)号：US08729552B2

公开(公告)日：2014-05-20

申请号：US13494414

申请日：2012-06-12

申请人： Kwang-Suk Kim ,  Min-Kyu Kim

发明人： Kwang-Suk Kim ,  Min-Kyu Kim

IPC分类号： H01L29/12

CPC分类号： H01L29/78606 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/45 ,  H01L29/78696

摘要： In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.

摘要翻译： 一方面，平板显示装置的背板包括：基板; 形成在所述基板上的源电极和漏电极; 形成在与所述源极/漏极电极相同的层上的电容器底部电极; 形成在所述基板上的对应于所述源电极和所述漏电极的有源层; 插入在源电极和漏电极和有源层之间的阻挡层; 形成在所述基板上以覆盖所述有源层的第一绝缘层; 对应于所述有源层形成在所述第一绝缘层上的栅电极; 形成在与电容器底部电极对应的与栅电极相同的层上的电容器顶部电极; 并且设置在第一绝缘层上形成以覆盖栅电极和电容器顶电极的第二绝缘层。

公开(公告)号：US08431927B2

公开(公告)日：2013-04-30

申请号：US12873206

申请日：2010-08-31

申请人： Kwang-Suk Kim ,  Jin-Seong Park

发明人： Kwang-Suk Kim ,  Jin-Seong Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/3262

摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the concentration of Hf is from about 9 to about 15 at % based on 100 at % of the total concentration of Hf, In, and Zn; and source and drain regions respectively formed to extend on both sides of the oxide semiconductor layer and the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅极绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中Hf的浓度基于总浓度的100at％为约9至约15at％ Hf，In和Zn; 并且分别形成为在氧化物半导体层和栅极绝缘层的两侧上延伸的源极和漏极区域。

公开(公告)号：US08178884B2

公开(公告)日：2012-05-15

申请号：US12393422

申请日：2009-02-26

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L29/12 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08914103B2

公开(公告)日：2014-12-16

申请号：US13503586

申请日：2010-10-21

申请人： Nam-In Kim ,  Myoung-Woo Chung ,  Seung-Gyu Lim ,  Kwang-Suk Kim

发明人： Nam-In Kim ,  Myoung-Woo Chung ,  Seung-Gyu Lim ,  Kwang-Suk Kim

IPC分类号： A61N1/30 ,  H01M6/18 ,  H01M6/40 ,  H01M10/04 ,  A61N1/32 ,  A61N1/04

CPC分类号： A61N1/0428 ,  A61N1/0448 ,  A61N1/303 ,  A61N1/325 ,  H01M6/181 ,  H01M6/40 ,  H01M10/0436 ,  H01M2300/0082

摘要： An apparatus having a thin film battery includes: a device electrically operating and including a substrate; and the thin film battery for supplying power to the device. The thin film battery includes: a first electrically conductive layer formed on the substrate; a second electrically conductive layer formed on the substrate while being spaced apart from the first electrically conductive layer and positioned on an identical plane to the first electrically conductive layer; a first electrode layer formed on the first electrically conductive layer and electrically connected to the first electrically conductive layer; a second electrode layer formed on the second electrically conductive layer, electrically connected to the second electrically conductive layer, disposed while being spaced apart from the first electrode layer in a side direction, and having a polarity opposite to a polarity of the first electrode layer; an ion conductive polymer electrolyte for covering both the first electrode layer and the second electrode layer; and a sealing film for sealing the ion conductive polymer electrolyte.

摘要翻译： 具有薄膜电池的装置包括：电操作并包括基板的装置; 以及用于向该装置供电的薄膜电池。 薄膜电池包括：形成在基板上的第一导电层; 第二导电层，其形成在所述基板上，同时与所述第一导电层间隔开并且定位在与所述第一导电层相同的平面上; 形成在第一导电层上并电连接到第一导电层的第一电极层; 形成在第二导电层上的与第二导电层电连接的第二电极层，与第一电极层沿侧向间隔设置，并且具有与第一电极层的极性相反的极性; 用于覆盖第一电极层和第二电极层的离子导电聚合物电解质; 以及用于密封离子导电聚合物电解质的密封膜。

公开(公告)号：US08319217B2

公开(公告)日：2012-11-27

申请号：US12873199

申请日：2010-08-31

申请人： Kwang-Suk Kim ,  Min-Kyu Kim

发明人： Kwang-Suk Kim ,  Min-Kyu Kim

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

公开(公告)号：US20110212580A1

公开(公告)日：2011-09-01

申请号：US13102984

申请日：2011-05-06

申请人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Steve Y. G. Mo

发明人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Steve Y. G. Mo

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.

摘要翻译： 教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极 以及分别与源极区域和漏极区域电接触的漏极电极。 氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。 通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。

公开(公告)号：US20100006833A1

公开(公告)日：2010-01-14

申请号：US12393422

申请日：2009-02-26

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US20090294772A1

公开(公告)日：2009-12-03

申请号：US12318856

申请日：2009-01-09

申请人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

IPC分类号： H01L33/00 ,  H01J1/62 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions.

摘要翻译： 提供具有氧化物半导体作为有源层的薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 通过栅极绝缘层与栅电极隔离并且包括沟道，源极和漏极区域的氧化物半导体层; 源极和漏极分别耦合到源极和漏极区域; 以及插入在源极和漏极区域以及源极和漏极之间的欧姆接触层。 在TFT中，欧姆接触层与载流子浓度高于源区和漏区的氧化物半导体层形成。