公开(公告)号：US06608737B2

公开(公告)日：2003-08-19

申请号：US10266664

申请日：2002-10-08

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jen-Wei C. Koo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jen-Wei C. Koo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49046

摘要： A giant magneto-resistive head is provided which includes a novel high data-rate stitched pole inductive magnetic write head. The write head incorporates a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens the throat height of the write head, reduces its saturation write current, and improves its overwrite and side erasure performance.

摘要翻译： 提供了一种巨型磁阻头，它包括一种新颖的高数据速率缝合磁极感应磁写头。 写磁头包括从磁极尖端凹入的非磁性间隔层和磁极轭。 间隔层缩短写头的喉部高度，降低其饱和写入电流，并提高其覆盖和侧面擦除性能。

公开(公告)号：US06469874B1

公开(公告)日：2002-10-22

申请号：US09523993

申请日：2000-03-13

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49046

摘要： A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

摘要翻译： 包含非磁性间隔层的高数据速率缝合磁极感应磁性写入头和从磁极尖端凹入的磁极轭。 所述间隔层沉积为自对准的图案化光刻胶工艺的一部分，其中首先沉积间隔层，然后将上极组件的P2部分电镀在其上以形成极尖构型。 增加间隔层的厚度，同时将其保持在规定的公差范围内，允许极片的上缝合P3部分相对于P2的尖端凹入。 间隔层缩短喉部高度，降低饱和写入电流，并提高覆盖和侧面擦除性能。

公开(公告)号：US06393692B1

公开(公告)日：2002-05-28

申请号：US09283840

申请日：1999-04-01

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

IPC分类号： H04R3100

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US06373667B1

公开(公告)日：2002-04-16

申请号：US09637208

申请日：2000-08-14

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US06879474B2

公开(公告)日：2005-04-12

申请号：US10718878

申请日：2003-11-21

申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

公开(公告)号：US06469875B1

公开(公告)日：2002-10-22

申请号：US09525672

申请日：2000-03-15

申请人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

发明人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

摘要翻译： 一种具有凹陷的共享极的缝合写头的结构和方法。 该方法包括在第一半共享极上形成底部线圈电介质层。 线圈形成在底部线圈电介质层上。 接下来，在第一半共享极（S2）上形成第二半共享极（P1）。 我们在结构上形成顶层线圈介电层。 在关键步骤中，我们化学机械抛光顶层线圈介电层。 写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。 在写间隙层上形成上极（P3）和硬掩模。 我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

公开(公告)号：US06383574B1

公开(公告)日：2002-05-07

申请号：US09360118

申请日：1999-07-23

申请人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： B05D500

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

摘要翻译： 形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。 然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。 该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

公开(公告)号：US07047625B2

公开(公告)日：2006-05-23

申请号：US10647762

申请日：2003-08-25

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/295 ,  G11B5/11 ,  G11B5/17 ,  G11B5/1871 ,  Y10T29/49002 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。 然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

公开(公告)号：US06960281B2

公开(公告)日：2005-11-01

申请号：US10394098

申请日：2003-03-21

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

IPC分类号： G11B5/31 ,  G11B5/39 ,  C23C14/34

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The present method produces the necessary taper by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

摘要翻译： 一种用于形成用于磁性写入头的修整的上极片的方法，所述极片具有在其后缘处最宽的锥形轮廓。 这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。 本方法通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率，并且具有高耐腐蚀性。 结果，写入间隙不突出以掩盖用于形成锥形的离子束蚀刻的效果。

公开(公告)号：US20050047011A1

公开(公告)日：2005-03-03

申请号：US10647762

申请日：2003-08-25

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： G11B5/11 ,  G11B5/147 ,  G11B5/17 ,  G11B5/187 ,  G11B5/29

CPC分类号： G11B5/295 ,  G11B5/11 ,  G11B5/17 ,  G11B5/1871 ,  Y10T29/49002 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。 然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。