Abstract:
A method of bandwidth control and a corresponding bandwidth control device are disclosed, in which a plurality of queues are provided, bandwidth is assigned to each of the queues on the basis of a strict priority scheme, and additional bandwidth is assigned to the queues on the basis of a fair queuing scheme.
Abstract:
A method of bandwidth control and a corresponding bandwidth control device are disclosed, in which a plurality of queues are provided, bandwidth is assigned to each of the queues on the basis of a strict priority scheme, and additional bandwidth is assigned to the queues on the basis of a fair queuing scheme.
Abstract:
A bit-read apparatus includes a first decoder and N multiplexers, each having Q output nodes and Q pull-ups coupled thereto. Respective multiplexers have M selectors coupled to N×M respective select lines and register-file cells. The selectors are in Q groups coupled to respective output nodes. Each multiplexer has a logic gate with inputs coupled to respective multiplexer output nodes. A second decoder is coupled to an N+1th multiplexer having R output nodes and R pull-ups coupled thereto. The N+1th multiplexer also has N selectors, coupled to respective select lines of the second decoder and respective output logic gates of the N multiplexers. The N selectors are in R groups coupled to the R nodes. An output logic gate for N+1th multiplexer has R inputs coupled respectively to the R nodes. Each pull-up of the multiplexers drives its respective multiplexer output node responsive to an address-bit signal.
Abstract:
A latch is described that provides soft error rate protection with integrated scan capability and collision avoidance. The latch has a latch output node and a first, second, and third sublatches. Each sublatch has a respective input circuitry, output node, and feedback circuitry coupled to the output node for reinforcing an output signal of the sublatch. Each sublatch is operable to receive a data signal at its input circuitry and responsively generate a binary-state output signal on its output nodes. The first and second output nodes such that, if an output of the third sublatch changes, the first and second sublatches force the third sublatch to have a same output. This “forced” change reduces the soft error rate in the latch and the output signal of the latch output node is restored without the sublatches colliding.
Abstract:
A register file apparatus and method incorporating read-after-write blocking using detection cells provides improved read access times in high performance register files. One or more detection cells identical to the register file cells and located in the register file array are used to control the read operation in the register file by configuring the detection cells to either alternate value at each write or change to a particular value after a write and then detecting when the write has completed by detecting the state change of an active detection cell. The state change detection can be used to delay the leading edge of a read strobe or may be used in the access control logic to delay generation of a next read strobe. The register file thus provides a scalable design that does not have to be tuned for each application and that tracks over voltage and clock skew variation.
Abstract:
A register file is often used within integrated circuitry to temporarily hold data. Sometimes this data needs to be retained within the register file for a period of time, such as when there is a stall operation. Conventional register files have utilized a hold multiplexor to perform such a stall operation. The multiplexor however inserts a delay that is undesirable in high performance integrated circuitry. The multiplexor is replaced with a tri-state inverter coupled to the global bit line of the register file, which minimizes this additional delay from the register file data access time.
Abstract:
A memory array includes a storage unit with a number of sections and decoders coupled to respective ones of the sections for decoding an N-bit address signal and responsively asserting a signal on one of the word lines selected by the address signal. Local clock buffers are coupled to respective ones of the decoders for receiving a clock signal and an address signal including M most-significant bits of the N-bit address signal and generating respective timing signals. The decoders receive the timing signal from their respective local clock buffers. Each decoder is operable to alternately precharge and evaluate the N-bit address signal responsive to phases of the timing signal. Each local clock buffer is operable, responsive to a state of the M bits of the address signal, for selecting between holding its timing signal in a deasserted state and enabling its timing signal to follow the clock signal.
Abstract:
A structure and method are provided which reduce memory cell size by forming self-formed contacts and self-aligned source lines in the array. In one embodiment of the present invention, a plurality of memory cells are formed in an array. Then, a first insulating layer is deposited on the array, and subsequently etched to form spacers on the sidewalls of each memory cell. Conductive plugs are then formed between adjacent spacers. Subsequently, a second insulating layer is deposited over the array. Finally, drain contacts are formed through the second insulating layer to a first set of plugs. Other plugs form source lines for the array. Because the present invention provides a self-formed contact, only the second insulating layer is etched to establish contact between a metal bit line and an underlying diffused drain region. Thus, the present invention ensures appropriate isolation for each memory cell while reducing the area required for contact formation. In this manner, the self-formed contact allows for significant size reduction of the contact pitch. Moreover, using other plugs to form the self-aligned source lines of the array further reduces the size of the word line pitch, thereby dramatically reducing the associated cell size and allowing formation of ultra-high density memory arrays.
Abstract:
A circuit permits a user to present signals to control the flow of data from a first-type cell to a second-type cell. The circuit is susceptible to loading each cell individually, as well as loading cells by means of scanning input in a series through a low order cell to a higher order cell. The circuit may be copied as a series of cells wherein a bit held in each first-type cell is copied to the next higher second-type cell.
Abstract:
A system and method of selective row energization based on write data, with a selective row energization system including a storage array 102 having M rows 104 and N columns 106; an N-bit data word register 108; a uniform-detect circuit 110 responsive to a data word to generate a uniform word data bit having a first value when the data word is uniform; an M-bit uniform-detect register 112 having M uniform-detect latches 114, each being associated with one of the M rows 104 and storing the uniform word data bit for the data word stored in the associated M row 104; and an M-bit row driver device 116 responsive to the uniform word data bit for each of the M rows 104 to inhibit energization of the M rows 104 for which the uniform word data bit is the first value.