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公开(公告)号:US07422962B2
公开(公告)日:2008-09-09
申请号:US10975797
申请日:2004-10-27
申请人: Chien-Hua Chen , Zhizhang Chen , Steven R Geissler
发明人: Chien-Hua Chen , Zhizhang Chen , Steven R Geissler
IPC分类号: H01L21/30
CPC分类号: B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要: A method of singulating electronic devices, including aligning a saw blade over a lid street disposed on a lid substrate that is disposed over a device substrate. An electronic device that includes a bond pad is disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench in the lid street. The trench includes a trench bottom in the lid substrate.
摘要翻译: 一种单片电子设备的方法,包括将设置在设置在设备基板上的盖基板上的盖街道上的锯片对准。 包括接合焊盘的电子设备设置在设备基板上,其中盖路设置在接合焊盘上方。 此外,该方法还包括部分地通过盖街道锯切以在盖街道中形成沟槽。 沟槽包括在盖基板中的沟槽底部。
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公开(公告)号:US07682934B2
公开(公告)日:2010-03-23
申请号:US11011640
申请日:2004-12-14
申请人: Chien-Hua Chen , Steven R. Geissler
发明人: Chien-Hua Chen , Steven R. Geissler
CPC分类号: B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要: A method includes providing a micro device wafer having micro devices supported by a wafer substrate and a multi-device lid substrate coupled to and spaced from the wafer substrate. The method further includes sawing through the multi-device lid substrate to a depth between the wafer substrate and the lid substrate.
摘要翻译: 一种方法包括提供具有由晶片衬底支撑的微器件和耦合到晶片衬底并与其间隔开的多器件盖衬底的微器件晶片。 该方法还包括通过多器件盖衬底锯切到晶片衬底和盖衬底之间的深度。
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公开(公告)号:US20090225131A1
公开(公告)日:2009-09-10
申请号:US12205709
申请日:2008-09-05
CPC分类号: B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2002/14387
摘要: In one embodiment, a fluid ejector structure includes an orifice sub-structure and an ejector element sub-structure direct contact bonded together along a direct contact bonding interface. The orifice sub-structure has a plurality of orifices therein. Each orifice is positioned adjacent to a corresponding one of a plurality of fluid ejection elements on the ejector element sub-structure.
摘要翻译: 在一个实施例中,流体喷射器结构包括沿着直接接触接合界面结合在一起的孔口子结构和喷射器子结构直接接触。 孔口子结构在其中具有多个孔。 每个孔口定位成与喷射器元件子结构上的多个流体喷射元件中相应的一个相邻。
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公开(公告)号:US08109607B2
公开(公告)日:2012-02-07
申请号:US12205709
申请日:2008-09-05
IPC分类号: B41J2/135
CPC分类号: B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2002/14387
摘要: In one embodiment, a fluid ejector structure includes an orifice sub-structure and an ejector element sub-structure direct contact bonded together along a direct contact bonding interface. The orifice sub-structure has a plurality of orifices therein. Each orifice is positioned adjacent to a corresponding one of a plurality of fluid ejection elements on the ejector element sub-structure.
摘要翻译: 在一个实施例中,流体喷射器结构包括沿着直接接触接合界面结合在一起的孔口子结构和喷射器子结构直接接触。 孔口子结构在其中具有多个孔。 每个孔口定位成与喷射器元件子结构上的多个流体喷射元件中相应的一个相邻。
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公开(公告)号:US20060088980A1
公开(公告)日:2006-04-27
申请号:US10975797
申请日:2004-10-27
申请人: Chien-Hua Chen , Zhizhang Chen , Steven Geissler
发明人: Chien-Hua Chen , Zhizhang Chen , Steven Geissler
CPC分类号: B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要: A method of singulating electronic devices, including aligning a saw blade over a lid street disposed on a lid substrate that is disposed over a device substrate. An electronic device that includes a bond pad is disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench in the lid street. The trench includes a trench bottom in the lid substrate.
摘要翻译: 一种单片电子设备的方法,包括将设置在设置在设备基板上的盖基板上的盖街道上的锯片对准。 包括接合焊盘的电子设备设置在设备基板上,其中盖路设置在接合焊盘上方。 此外,该方法还包括部分地通过盖街道锯切以在盖街道中形成沟槽。 沟槽包括在盖基板中的沟槽底部。
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公开(公告)号:US20070254405A1
公开(公告)日:2007-11-01
申请号:US11778196
申请日:2007-07-16
申请人: Chien-Hua Chen , Zhizhang Chen , Neal Meyer
发明人: Chien-Hua Chen , Zhizhang Chen , Neal Meyer
IPC分类号: H01L21/50
CPC分类号: H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要: This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译: 本发明涉及一种具有突出接点的半导体,包括:第一半导体衬底,具有至少一个基本上位于第一衬底内的互连,第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。
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公开(公告)号:US07262495B2
公开(公告)日:2007-08-28
申请号:US10960827
申请日:2004-10-07
申请人: Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
发明人: Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
IPC分类号: H01L23/48
CPC分类号: H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要: This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译: 本发明涉及一种具有突出接点的半导体,包括:第一半导体衬底,具有至少一个基本上位于第一衬底内的互连,第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。
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公开(公告)号:US07833830B2
公开(公告)日:2010-11-16
申请号:US11778196
申请日:2007-07-16
申请人: Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
发明人: Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
CPC分类号: H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要: This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译: 本发明涉及一种具有突出接点的半导体,包括:第一半导体衬底,具有至少一个基本上位于第一衬底内的互连,第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。
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公开(公告)号:US20070089492A1
公开(公告)日:2007-04-26
申请号:US11259609
申请日:2005-10-26
申请人: Zhizhang Chen , Qin Liu , Timothy Myers , Chien-Hua Chen
发明人: Zhizhang Chen , Qin Liu , Timothy Myers , Chien-Hua Chen
IPC分类号: G01N11/04
CPC分类号: G02F1/135 , G02F1/1334 , G02F1/1354
摘要: Various devices and methods employing a resistive phase change material are disclosed.
摘要翻译: 公开了采用电阻相变材料的各种装置和方法。
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公开(公告)号:US07382512B2
公开(公告)日:2008-06-03
申请号:US11259609
申请日:2005-10-26
申请人: Zhizhang Chen , Qin Liu , Timothy F. Myers , Chien-Hua Chen
发明人: Zhizhang Chen , Qin Liu , Timothy F. Myers , Chien-Hua Chen
IPC分类号: G02F1/01 , G02F1/03 , G02F1/1333 , G02F1/1335
CPC分类号: G02F1/135 , G02F1/1334 , G02F1/1354
摘要: Various devices and methods employing a resistive phase change material are disclosed.
摘要翻译: 公开了采用电阻相变材料的各种装置和方法。
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