公开(公告)号：US08756615B2

公开(公告)日：2014-06-17

申请号：US13440990

申请日：2012-04-05

申请人： Cheng-Hao Chin ,  Chien-Liang Lin ,  Shin-Yun Lin

发明人： Cheng-Hao Chin ,  Chien-Liang Lin ,  Shin-Yun Lin

IPC分类号： G06F9/54

CPC分类号： G06F9/54 ,  G06F9/44505 ,  G06F9/45558

摘要： A method and an electronic device for synchronizing information of dual operating systems and a recording medium are provided. The method is used for synchronizing information of a first operating system and a second operating system when an electronic device is switching from a first operating system to a second operating system. First, the second operating system sends an information requesting message to a controller of the electronic device when the first operating system is switched to the second operating system. The controller checks if the first operating system operates in a work mode. If the first operating system operates in the work mode, the controller forwards the information requesting message to the first operating system, so as to obtain the information of the first operating system. Finally, the second system synchronizes the information recorded therein according to the obtained information.

摘要翻译： 提供了一种用于同步双操作系统和记录介质的信息的方法和电子设备。 当电子设备从第一操作系统切换到第二操作系统时，该方法用于同步第一操作系统和第二操作系统的信息。 首先，当第一操作系统切换到第二操作系统时，第二操作系统向电子设备的控制器发送信息请求消息。 控制器检查第一个操作系统是否以工作模式运行。 如果第一操作系统在工作模式下工作，则控制器将信息请求消息转发到第一操作系统，以获得第一操作系统的信息。 最后，第二系统根据获得的信息同步其中记录的信息。

公开(公告)号：US08722501B2

公开(公告)日：2014-05-13

申请号：US13275337

申请日：2011-10-18

申请人： Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

发明人： Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/66795

摘要： A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer.

摘要翻译： 一种制造多栅极晶体管器件的方法包括：提供具有图案化半导体层，栅极电介质层和顺序地形成在其上的栅极层的半导体衬底，形成依次具有第一绝缘层和第二绝缘层的覆盖层 图案化半导体层和栅极层，去除多个绝缘层的一部分以同时在栅极层周围形成第一间隔物，以及围绕图案化半导体层形成第二间隔物，去除第二间隔物以暴露第一绝缘层的一部分 覆盖图案化的半导体层并且同时移除第一间隔物的一部分以形成围绕栅极层的第三间隔物，以及去除暴露的第一绝缘层以暴露图案化的半导体层。

公开(公告)号：US08478978B2

公开(公告)日：2013-07-02

申请号：US12111213

申请日：2008-04-29

申请人： Chien-Liang Lin

发明人： Chien-Liang Lin

IPC分类号： G06F9/00

CPC分类号： G06F1/3203

摘要： A system and an electronic device having multiple operating systems and an operating method thereof are provided. The electronic device includes a display and a system having a first operating system, a second operating system, and an embedded controller. The first operating system consumes less power than the second operating system. The embedded controller receives an input signal to switch between the first operating system and the second operating system and display an interface of the switched operating system on a screen of the display. The first operating system and the embedded controller remain in an alive state after the electronic device is turned on, and the second operating system enters a non-working state after a preset idle time.

摘要翻译： 提供具有多个操作系统的系统和电子设备及其操作方法。 电子设备包括显示器和具有第一操作系统，第二操作系统和嵌入式控制器的系统。 第一个操作系统的功耗比第二个操作系统少。 嵌入式控制器接收输入信号以在第一操作系统和第二操作系统之间切换，并且在显示器的屏幕上显示切换的操作系统的接口。 第一操作系统和嵌入式控制器在电子设备接通之后保持在活动状态，并且第二操作系统在预设的空闲时间之后进入非工作状态。

公开(公告)号：US08454288B2

公开(公告)日：2013-06-04

申请号：US12930412

申请日：2011-01-07

申请人： David Hui ,  Chien-Liang Lin

发明人： David Hui ,  Chien-Liang Lin

IPC分类号： F16B23/02

CPC分类号： F16B23/0038

摘要： An anti-wearing nut or bolt including a plurality of polygonal sides circumferentially formed on a head portion of the nut or bolt and; each polygonal side including: two inclined sub-sides respectively inclined outwardly convergently from opposite apexes of each polygonal side, each inclined sub-side extrapolatively defining a small biasing acute angle between each inclined sub-side and a corresponding socket side, and an intermediate sub-side transversely intersecting the two inclined sub-sides; whereby upon a clockwise or counter-clockwise rotation of the socket, one inclined sub-side of the nut or bolt will be planarly engaged with each socket side, without being linearly bitten or dogged, to thereby prevent wearing or damage of the apexes of the nut or bolt.

摘要翻译： 一种防磨损螺母或螺栓，包括周向形成在螺母或螺栓的头部上的多个多边形; 每个多边形侧包括：分别从每个多边形侧面的相对顶点向外收敛地倾斜的两个倾斜子侧，每个倾斜子侧在每个倾斜子侧和相应的插座侧之间外推定义小的偏压锐角，以及中间子 与横向相交的两个倾斜的副边; 由此，当插座的顺时针或逆时针旋转时，螺母或螺栓的一个倾斜的副侧面将与每个插座侧面平面地接合，而不会被线性咬合或阻塞，从而防止佩戴或损坏 螺母或螺栓。

公开(公告)号：US20130095616A1

公开(公告)日：2013-04-18

申请号：US13275337

申请日：2011-10-18

申请人： Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

发明人： Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/66795

摘要： A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer.

摘要翻译： 一种制造多栅极晶体管器件的方法包括：提供具有图案化半导体层，栅极电介质层和顺序地形成在其上的栅极层的半导体衬底，形成依次具有第一绝缘层和第二绝缘层的覆盖层 图案化半导体层和栅极层，去除多个绝缘层的一部分以同时在栅极层周围形成第一间隔物，以及围绕图案化半导体层形成第二间隔物，去除第二间隔物以暴露第一绝缘层的一部分 覆盖图案化的半导体层并且同时移除第一间隔物的一部分以形成围绕栅极层的第三间隔物，以及去除暴露的第一绝缘层以暴露图案化的半导体层。

公开(公告)号：US20120329261A1

公开(公告)日：2012-12-27

申请号：US13164781

申请日：2011-06-21

申请人： Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen ,  Yu-Min Lin ,  Chin-Cheng Chien ,  Jei-Ming Chen ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Yi-Ching Wu ,  Shu-Yen Chan

发明人： Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen ,  Yu-Min Lin ,  Chin-Cheng Chien ,  Jei-Ming Chen ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Yi-Ching Wu ,  Shu-Yen Chan

IPC分类号： H01L21/782 ,  H01L21/28

CPC分类号： H01L29/7833 ,  H01L21/265 ,  H01L21/3215 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659

摘要： A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

摘要翻译： 一种金属栅极的制造方法，包括提供具有至少形成有导电类型的半导体器件的衬底，在该半导体器件中形成栅极沟槽，形成具有导电类型的功函数金属层和对应于 栅极沟槽中的导电类型，并且执行离子注入以将功函数金属层的固有功函数调整到目标功函数。

公开(公告)号：US08312476B2

公开(公告)日：2012-11-13

申请号：US12183066

申请日：2008-07-31

申请人： Cheng-Hao Chin ,  Chien-Liang Lin ,  Shin-Yun Lin

发明人： Cheng-Hao Chin ,  Chien-Liang Lin ,  Shin-Yun Lin

IPC分类号： G06F9/46 ,  G06F13/00

CPC分类号： G06F9/54 ,  G06F9/44505 ,  G06F9/45558

摘要： A method for synchronizing information of dual operating systems is provided. The method is used for synchronizing information of a first operating system and a second operating system when an electronic device is switching from a first operating system to a second operating system. First, the second operating system sends an information requesting message to a controller of the electronic device when the first operating system is switched to the second operating system. The controller checks if the first operating system operates in a work mode. If the first operating system operates in the work mode, the controller forwards the information requesting message to the first operating system, so as to obtain the information of the first operating system. Finally, the second system synchronizes the information recorded therein according to the obtained information.

摘要翻译： 提供了一种用于同步双操作系统的信息的方法。 当电子设备从第一操作系统切换到第二操作系统时，该方法用于同步第一操作系统和第二操作系统的信息。 首先，当第一操作系统切换到第二操作系统时，第二操作系统向电子设备的控制器发送信息请求消息。 控制器检查第一个操作系统是否以工作模式运行。 如果第一操作系统在工作模式下工作，则控制器将信息请求消息转发到第一操作系统，以获得第一操作系统的信息。 最后，第二系统根据获得的信息同步其中记录的信息。

公开(公告)号：US08263501B2

公开(公告)日：2012-09-11

申请号：US12968606

申请日：2010-12-15

申请人： Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen

发明人： Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02337 ,  H01L21/02238 ,  H01L21/02312 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211

摘要： A silicon dioxide film fabricating process includes the following steps. Firstly, a substrate is provided. A rapid thermal oxidation-in situ steam generation process is performed to form a silicon dioxide film on the substrate. An annealing process is performed to anneal the substrate in a first gas mixture at a temperature in the range of 1000° C. to 1100° C.

摘要翻译： 二氧化硅膜制造方法包括以下步骤。 首先，提供基板。 进行快速热氧化原位蒸汽生成处理以在基板上形成二氧化硅膜。 执行退火处理以在1000℃至1100℃的温度下将第一气体混合物中的衬底退火。

公开(公告)号：US20090063845A1

公开(公告)日：2009-03-05

申请号：US12111213

申请日：2008-04-29

申请人： Chien-Liang Lin

发明人： Chien-Liang Lin

IPC分类号： G06F9/00

CPC分类号： G06F1/3203

摘要： A system and an electronic device having multiple operating systems and an operating method thereof are provided. The electronic device includes a display and a system having a first operating system, a second operating system, and an embedded controller. The first operating system consumes less power than the second operating system. The embedded controller receives an input signal to switch between the first operating system and the second operating system and display an interface of the switched operating system on a screen of the display. The first operating system and the embedded controller remain in an alive state after the electronic device is turned on, and the second operating system enters a non-working state after a preset idle time.

摘要翻译： 提供具有多个操作系统的系统和电子设备及其操作方法。 电子设备包括显示器和具有第一操作系统，第二操作系统和嵌入式控制器的系统。 第一个操作系统的功耗比第二个操作系统少。 嵌入式控制器接收输入信号以在第一操作系统和第二操作系统之间切换，并且在显示器的屏幕上显示切换的操作系统的接口。 第一操作系统和嵌入式控制器在电子设备接通之后保持在活动状态，并且第二操作系统在预设的空闲时间之后进入非工作状态。

公开(公告)号：US20070217625A1

公开(公告)日：2007-09-20

申请号：US11367370

申请日：2006-03-06

申请人： Ming-Shian Bai ,  Chih-Chung Lee ,  Chien-Liang Lin

发明人： Ming-Shian Bai ,  Chih-Chung Lee ,  Chien-Liang Lin

IPC分类号： H04R3/00 ,  H04R29/00

CPC分类号： H04R3/002

摘要： The present invention compensates bass frequency for a loudspeaker without using any sensor. The strength and stability of the loudspeaker are enhanced and the working frequency is lowered too. Adaptive loudnesses for various spaces are set. And the parameter drift owing to long-term operation is restrained as well.

摘要翻译： 本发明在不使用任何传感器的情况下补偿扬声器的低音频率。 扬声器的强度和稳定性得到提高，工作频率也降低。 设置各种空间的自适应响度。 并且由于长期运行引起的参数漂移也受到限制。