Optical modulator gate array including multi-quantum well photodetector
    1.
    发明授权
    Optical modulator gate array including multi-quantum well photodetector 失效
    包括多量子阱光电探测器的光调制器门阵列

    公开(公告)号:US5451767A

    公开(公告)日:1995-09-19

    申请号:US928530

    申请日:1992-08-13

    摘要: An optical gate array includes a photodetector, an optical modulator, and a reflecting structure arranged therebetween. The photodetector, the optical modulator, and the reflecting structure are composed of semiconductor materials. The photodetector includes an MQW (Multi Quantum Well). The reflecting structure is constituted by a distributed Bragg reflector formed by alternately stacking semiconductor layers having different refractivities. The photodetector and the optical modulator are arranged to receive light from different directions. The modulation characteristics of the optical modulator are controlled by the intensity of light radiated on the photodetector. The reflecting structure connects the photodetector and the modulator electrically and isolates lights radiated on both parts. A plurality of optical gates, each constituted by the photodetector, the optical modulator, and the reflection structure, are two-dimensionally arranged.

    摘要翻译: 光栅阵列包括光电检测器,光调制器和布置在其间的反射结构。 光检测器,光调制器和反射结构由半导体材料组成。 光电检测器包括MQW(多量子阱)。 反射结构由通过交替堆叠具有不同折射率的半导体层形成的分布式布拉格反射体构成。 光检测器和光调制器布置成从不同方向接收光。 光调制器的调制特性由辐射在光检测器上的光的强度来控制。 反射结构将光电检测器和调制器电连接并隔离两部分辐射的光。 由光电检测器,光调制器和反射结构构成的多个光栅二维布置。