摘要:
A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.
摘要:
For use, e.g., as a fast acting microminiature optical switch, modulator, or oscillator in integrated optics, a device is provided with a light-sensitive element (12-20) whose electrical state can be influenced optically. The element (12-20) includes electrically biased semiconductor layers (15-17) which form a resonant-tunneling structure, and the electrical state is switched by radiation (23, 25) having quantum-well bandgap energy. The change in electrical state is accompanied by a change in opacity or refractive index, permitting optical read-out (24, 26).
摘要:
Apparatus comprising a monolithic structure having an array of substructures, e.g., mesas, each including first and second photodetectors electrically connected as components of different self electro-optic effect devices. The devices are optically interconnected due to the positioning of the component photodetectors within a single mesa.
摘要:
The invention is a nonlinear or bistable optical device having a low switching energy. The invention uses a means responsive to light for generating a photocurrent, a structure having a semiconductor quantum well region, and means responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor quantum well region. The optical absorption of the semiconductor quantum well region varies in response to variations in the photocurrent. A photodiode or phototransistor may be used as the means responsive to light, and may be made integral with the structure having the semiconductor quantum well region. An array of devices may be fabricated on a single chip for parallel logic processing.
摘要:
An optical gate array includes a photodetector, an optical modulator, and a reflecting structure arranged therebetween. The photodetector, the optical modulator, and the reflecting structure are composed of semiconductor materials. The photodetector includes an MQW (Multi Quantum Well). The reflecting structure is constituted by a distributed Bragg reflector formed by alternately stacking semiconductor layers having different refractivities. The photodetector and the optical modulator are arranged to receive light from different directions. The modulation characteristics of the optical modulator are controlled by the intensity of light radiated on the photodetector. The reflecting structure connects the photodetector and the modulator electrically and isolates lights radiated on both parts. A plurality of optical gates, each constituted by the photodetector, the optical modulator, and the reflection structure, are two-dimensionally arranged.
摘要:
According to the present invention, there is provided a nonlinear optical element including a p-i-n type photodiode (i layer is a light absorbing layer) provided with a barrier layer preventing the going-through of a majority carrier. In the nonlinear optical element of the present invention, since the charges are accumulated with the stop of carrier moving, there occur a deformation in energy band and change in internal electric field. Optical bistability can be attained even without an external circuit. Further, with a plurality of incident light, only one element can exhibit optical bistability therefor because there is no need to dispose an external circuit. According to a method of the present invention, it is possible to control bistability for one light by overlapping another light input to a carrier diffusing region generated by the one light.
摘要:
A semiconductor device is disclosed, which includes a multiple negative differential resistance element having negative differential resistance characteristics at at least two places in the current-voltage characteristics, and which is suitable for constructing a neural network having a high density integration and a high reliability.
摘要:
An optical switch in which states are defined by dynamic charge storage, rather than contention resolution, and which switches using pulsed radiation having a wavelength somewhat longer than the exciton wavelength in a SEED diode. The switch does not exhibit or need bistability but switches at a relatively low energy as compared to S-SEEDS switched at the exciton wavelength.
摘要:
A method of wavelength selective detection of light is achieved using p-i-n type diode and an external resistor connected in series to the diode and applying a reverse bias voltage to said p-i-n type diode through the external resistor. Two bistable wavelength ranges are obtained in the photocurrent spectrum, and the wavelength selective light detection is achieved with an asymmetric coupled quantum well structure. A p-i-n type optical element having multiply stable responses includes a coupled quantum well structure i layer producing the anti-crossing phenomenon in response to varying electric fields. The structure includes relatively thick and relatively thin quantum well layers separated by and coupled through a relatively thin barrier layer.
摘要:
Boolean logic functions are provided in a programmable optical logic device by combining a symmetric self-electrooptic effect device (S-SEED) with a logic control element for optically programming the S-SEED to initiate logic operations from a predetermined state. The predetermined preset state together with subsequent application of optical data signals to the S-SEED permit the desired logic operation to be performed on the optical data signal by the optical logic device. Logic operations which may be programmed into the optical logic device include AND, NAND, OR and NOR functions. A complementary pair (Q and Q) of optical signals is provided as output from each optical logic device.