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    Two-dimensional Planar photonic crystal superprism device and method of manufacturing the same
    1.
    发明申请
    Two-dimensional Planar photonic crystal superprism device and method of manufacturing the same 有权
    二维平面光子晶体超导装置及其制造方法

    公开(公告)号：US20080112669A1

    公开(公告)日：2008-05-15

    申请号：US11974635

    申请日：2007-10-15

    申请人： Choon Gi Choi ,  Young Tak Han ,  Jin Tae Kim ,  Woo Jin Lee

    发明人： Choon Gi Choi ,  Young Tak Han ,  Jin Tae Kim ,  Woo Jin Lee

    IPC分类号： G02B6/34 ,  G03F1/08

    CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/1221

    摘要： Provided are a two-dimensional planar photonic crystal superprism device and a method of manufacturing the same, in which a manufacturing process is simplified using a nanoimprint lithography technique, and thus price-reduction and mass production are facilitated. The two-dimensional planar photonic crystal superprism device includes: a single-mode input waveguide comprising a straight waveguide having a taper structure and a bending waveguide; a superprism formed on an output end side of the single-mode input waveguide and comprising a slab and a photonic crystal superprism; and a single-mode output waveguide comprising a straight waveguide having a taper structure and a bending waveguide, and formed adjacent to the photonic crystal superprism. Using the two-dimensional planar photonic crystal superprism device, it is possible to facilitate manufacturing of nano-photonic integrated circuits, photonic crystal integrated circuits and nano-photonic systems. In addition, a wavelength-selectable photonic crystal superprism device using high dispersion of photonic crystal, which is several hundred times the dispersion of conventional glass prism, can be manufactured using thermal/hot and ultraviolet nanoimprint lithography techniques corresponding to nano-manufacturing technology.

    摘要翻译： 提供了一种二维平面光子晶体超控装置及其制造方法，其中使用纳米压印光刻技术简化了制造工艺，因此有利于价格降低和批量生产。 二维平面光子晶体超导装置包括：单模输入波导，包括具有锥形结构的直波导管和弯曲波导; 形成在单模输入波导的输出端侧并且包括平板和光子晶体超控的超实例; 以及单模输出波导，其包括具有锥形结构的直波导管和弯曲波导，并且与光子晶体超立体相邻地形成。 使用二维平面光子晶体超微元器件，可以促进纳米光子集成电路，光子晶体集成电路和纳米光子系统的制造。 此外，使用对应于纳米制造技术的热/热和紫外线纳米压印光刻技术可以制造使用高分散度的光子晶体的波长可选择的光子晶体超大容量器件，其是常规玻璃棱镜的百分之几。

    Two-dimensional planar photonic crystal superprism device and method of manufacturing the same
    2.
    发明授权
    Two-dimensional planar photonic crystal superprism device and method of manufacturing the same 有权
    二维平面光子晶体超导装置及其制造方法

    公开(公告)号：US07515790B2

    公开(公告)日：2009-04-07

    申请号：US11974635

    申请日：2007-10-15

    申请人： Choon Gi Choi ,  Young Tak Han ,  Jin Tae Kim ,  Woo Jin Lee

    发明人： Choon Gi Choi ,  Young Tak Han ,  Jin Tae Kim ,  Woo Jin Lee

    IPC分类号： G02B6/10 ,  G02B6/34 ,  G02B5/04

    CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/1221

    摘要： Provided are a two-dimensional planar photonic crystal superprism device and a method of manufacturing the same, in which a manufacturing process is simplified using a nanoimprint lithography technique, and thus price-reduction and mass production are facilitated. The two-dimensional planar photonic crystal superprism device includes: a single-mode input waveguide comprising a straight waveguide having a taper structure and a bending waveguide; a superprism formed on an output end side of the single-mode input waveguide and comprising a slab and a photonic crystal superprism; and a single-mode output waveguide comprising a straight waveguide having a taper structure and a bending waveguide, and formed adjacent to the photonic crystal superprism. Using the two-dimensional planar photonic crystal superprism device, it is possible to facilitate manufacturing of nano-photonic integrated circuits, photonic crystal integrated circuits and nano-photonic systems. In addition, a wavelength-selectable photonic crystal superprism device using high dispersion of photonic crystal, which is several hundred times the dispersion of conventional glass prism, can be manufactured using thermal/hot and ultraviolet nanoimprint lithography techniques corresponding to nano-manufacturing technology.

    摘要翻译： 提供了一种二维平面光子晶体超控装置及其制造方法，其中使用纳米压印光刻技术简化了制造工艺，因此有利于价格降低和批量生产。 二维平面光子晶体超导装置包括：单模输入波导，包括具有锥形结构的直波导管和弯曲波导; 形成在单模输入波导的输出端侧并且包括平板和光子晶体超控的超实例; 以及单模输出波导，其包括具有锥形结构的直波导管和弯曲波导，并且与光子晶体超立体相邻地形成。 使用二维平面光子晶体超微元器件，可以促进纳米光子集成电路，光子晶体集成电路和纳米光子系统的制造。 此外，使用对应于纳米制造技术的热/热和紫外线纳米压印光刻技术可以制造使用高分散度的光子晶体的波长可选择的光子晶体超大容量器件，其是常规玻璃棱镜的百分之几。

    CAPACITIVE TYPE TOUCH PANEL
    4.
    发明申请
    CAPACITIVE TYPE TOUCH PANEL 审中-公开
    电容式触控面板

    公开(公告)号：US20120319991A1

    公开(公告)日：2012-12-20

    申请号：US13425737

    申请日：2012-03-21

    申请人： Chung Mo Yang ,  Sang Su Hong ,  Jae Hun Kim ,  In Hyung Lee ,  Woo Jin Lee ,  Young Woo Lee

    发明人： Chung Mo Yang ,  Sang Su Hong ,  Jae Hun Kim ,  In Hyung Lee ,  Woo Jin Lee ,  Young Woo Lee

    IPC分类号： G06F3/044

    CPC分类号： G06F3/044 ,  G06F2203/04112

    摘要： Disclosed herein is a capacitive type touch panel, including: a sensing electrode formed on one surface of a first transparent substrate and having a mesh structure where a plurality of openings with a width of 2X are surrounded by patterned lines; and a driving electrode formed on one surface of a second transparent substrate, which faces the surface of the first substrate, and having a mesh structure where a plurality of openings with a width of 2X are surrounded by patterned lines in a region corresponding to the sensing electrode and a plurality of openings with a width of X are surrounded by patterned lines in the other region.

    摘要翻译： 本发明公开了一种电容型触摸屏，包括：感测电极，其形成在第一透明基板的一个表面上并且具有网格结构，其中多个宽度为2X的开口被图案线围绕; 以及形成在第二透明基板的与第一基板的表面相对的一个表面上的驱动电极，并且具有网状结构，其中多个宽度为2X的开口在与感测对应的区域中被图案线包围 电极和宽度为X的多个开口被另一区域中的图案线围绕。

    Method of forming conformal dielectric film having Si-N bonds by PECVD
    7.
    发明授权
    Method of forming conformal dielectric film having Si-N bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形电介质膜的方法

    公开(公告)号：US07972980B2

    公开(公告)日：2011-07-05

    申请号：US12778808

    申请日：2010-05-12

    申请人： Woo Jin Lee ,  Akira Shimizu

    发明人： Woo Jin Lee ,  Akira Shimizu

    IPC分类号： H01L21/469

    CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中，其中等离子体被激发，由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

    DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE
    8.
    发明申请
    DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE 有权
    半导体基板的器件隔离技术

    公开(公告)号：US20090298257A1

    公开(公告)日：2009-12-03

    申请号：US12130522

    申请日：2008-05-30

    申请人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

    发明人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604

    摘要： A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

    摘要翻译： 在沟槽形成的硅衬底上形成器件隔离区并从中除去残留碳的方法包括提供由硅，碳，氮，氢，氧或其两种或多种的任何组合构成的可流动的绝缘材料; 通过在位于半导体衬底上的沟槽中使用可流动的绝缘材料形成薄的绝缘层，其中可流动的绝缘材料在富含硅和氮的条件下形成保形涂层，而在富含碳的条件下，可流动的，绝缘的 材料从沟槽的底部垂直生长; 并通过多步固化如O2热退火，臭氧UV固化，然后进行N2热退火，从可流动的绝缘材料中除去残留的碳沉积物。

    Device isolation technology on semiconductor substrate
    9.
    发明授权
    Device isolation technology on semiconductor substrate 有权
    半导体衬底上的器件隔离技术

    公开(公告)号：US07622369B1

    公开(公告)日：2009-11-24

    申请号：US12130522

    申请日：2008-05-30

    申请人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

    发明人： Woo Jin Lee ,  Atsuki Fukazawa ,  Nobuo Matsuki

    IPC分类号： H01L21/76 ,  H01L21/36 ,  H01L21/20 ,  H01L21/205 ,  H01L21/469

    CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604

    摘要： A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

    摘要翻译： 在沟槽形成的硅衬底上形成器件隔离区并从中除去残留碳的方法包括提供由硅，碳，氮，氢，氧或其两种或多种的任何组合构成的可流动的绝缘材料; 通过在位于半导体衬底上的沟槽中使用可流动的绝缘材料形成薄的绝缘层，其中可流动的绝缘材料在富含硅和氮的条件下形成保形涂层，而在富含碳的条件下，可流动的，绝缘的 材料从沟槽的底部垂直生长; 并通过多步固化如O2热退火，臭氧UV固化，然后进行N2热退火，从可流动的绝缘材料中除去残留的碳沉积物。