Optoelectronic semiconductor device
    1.
    发明授权
    Optoelectronic semiconductor device 有权
    光电半导体器件

    公开(公告)号:US09312435B2

    公开(公告)日:2016-04-12

    申请号:US13995801

    申请日:2011-12-01

    摘要: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

    摘要翻译: 光电子半导体器件包括发射绿色,白色或白绿色光的第一光源,并且包括在蓝色光谱范围内发射的半导体芯片,以及直接附着到半导体芯片的第一转换元件,第二光源,其发射 具有半导体芯片的红色光,其以蓝色光谱范围发射,并且具有直接附接到半导体芯片的第二转换元件和/或具有以红色光谱范围发射的半导体芯片;发射的第三光源, 蓝色光,并且具有在蓝色光谱范围内发射的半导体芯片,以及填充体,其具有嵌入有转化剂的基质材料,其中填充体集中设置在光源的下游。

    OPTOELECTRONIC SEMICONDUCTOR DEVICE
    2.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权
    光电半导体器件

    公开(公告)号:US20130320369A1

    公开(公告)日:2013-12-05

    申请号:US13995801

    申请日:2011-12-01

    IPC分类号: H01L33/08 H01L33/50

    摘要: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

    摘要翻译: 光电子半导体器件包括发射绿色,白色或白绿色光的第一光源,并且包括在蓝色光谱范围内发射的半导体芯片,以及直接附着到半导体芯片的第一转换元件,第二光源,其发射 具有半导体芯片的红色光,其以蓝色光谱范围发射,并且具有直接附接到半导体芯片的第二转换元件和/或具有以红色光谱范围发射的半导体芯片;发射的第三光源, 蓝色光,并且具有在蓝色光谱范围内发射的半导体芯片,以及填充体,其具有嵌入有转化剂的基质材料,其中填充体集中设置在光源的下游。

    Surface Light Guide and Planar Emitter
    3.
    发明申请
    Surface Light Guide and Planar Emitter 有权
    表面光导和平面发射体

    公开(公告)号:US20130114292A1

    公开(公告)日:2013-05-09

    申请号:US13643055

    申请日:2011-03-23

    IPC分类号: F21V8/00

    摘要: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

    摘要翻译: 表面光导具有沿着表面光导的主延伸平面延伸的辐射出射区域,并且用于横向耦合辐射。 表面光导包括用于散射耦合辐射的散射位置。 表面光导包括第一边界表面和第二边界表面,其限定了垂直方向上耦合的辐射的光电导。 第一层和第二层在第一边界表面和第二边界表面之间在垂直方向上彼此形成。 进一步公开的是包括至少一个表面光导的平面发射器。

    Surface light guide and planar emitter
    7.
    发明授权
    Surface light guide and planar emitter 有权
    表面光导和平面发射器

    公开(公告)号:US08998479B2

    公开(公告)日:2015-04-07

    申请号:US13643055

    申请日:2011-03-23

    IPC分类号: F21V7/04 F21V8/00

    摘要: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

    摘要翻译: 表面光导具有沿着表面光导的主延伸平面延伸的辐射出射区域,并且用于横向耦合辐射。 表面光导包括用于散射耦合辐射的散射位置。 表面光导包括第一边界表面和第二边界表面,其限定了垂直方向上耦合的辐射的光电导。 第一层和第二层在第一边界表面和第二边界表面之间在垂直方向上彼此形成。 进一步公开的是包括至少一个表面光导的平面发射器。

    Method for Production of a Radiation-Emitting Semiconductor Chip
    9.
    发明申请
    Method for Production of a Radiation-Emitting Semiconductor Chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号:US20110140141A1

    公开(公告)日:2011-06-16

    申请号:US13027810

    申请日:2011-02-15

    IPC分类号: H01L33/60 H01L33/40

    CPC分类号: H01L33/22 H01L33/0079

    摘要: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

    摘要翻译: 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法,其中在衬底上生长半导体层序列,在半导体层序列上形成或施加镜面层, 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层,半导体层序列与衬底分离,并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻,蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

    Method for production of a radiation-emitting semiconductor chip
    10.
    发明授权
    Method for production of a radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号:US07897423B2

    公开(公告)日:2011-03-01

    申请号:US11579194

    申请日:2004-04-29

    IPC分类号: H01L21/00 H01L21/46

    CPC分类号: H01L33/22 H01L33/0079

    摘要: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

    摘要翻译: 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层,其反射回到半导体层序列中,半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离,其中半导体层序列中的分离区域至少部分地被分解,使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面,基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面,气体蚀刻剂或湿化学蚀刻剂,其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。