利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.024 秒)

    Method for manufacturing a giant resistive ratio (GMR) bridge detector and a magnetoresistive bridge detector
    1.
    发明授权
    Method for manufacturing a giant resistive ratio (GMR) bridge detector and a magnetoresistive bridge detector 失效
    用于制造巨型电阻比（GMR）桥式检测器和磁阻桥式检测器的方法

    公开(公告)号：US06339329B1

    公开(公告)日：2002-01-15

    申请号：US09171074

    申请日：1999-04-29

    申请人： Christian Neumann ,  Klaus Marx ,  Franz Jost ,  Martin Freitag ,  Dietmar Senghaas

    发明人： Christian Neumann ,  Klaus Marx ,  Franz Jost ,  Martin Freitag ,  Dietmar Senghaas

    IPC分类号： G01R3309

    CPC分类号： G01R33/09 ,  H01L43/12 ,  Y10T29/49034

    摘要： A method for manufacturing a GMR bridge detector as well as the bridge detector itself in which magnetoresistive resistors are interconnected in the form of a bridge to detect a magnetic field. The resistors consist of a material that exhibits the giant magnetoresistive ratio (GMR) effect. The magnetoresistive sensitivity of the individual resistors is produced through annealing. The annealing of the resistors takes place through selective feeding of a current that is sufficient for reaching the temperature required for annealing into the bridge connections. Depending on the wiring of the bridge connections, the resistors are provided with the property necessary for the GMR effect either singly or in pairs. As the material for the resistors, in particular, a material of the class of discontinuous multilayer materials, particularly NiFe/Ag, is used in which the GMR property is produced through single annealing at a specific temperature.

    摘要翻译： 用于制造GMR桥式检测器的方法以及桥式检测器本身，其中磁阻电阻器以桥的形式互连以检测磁场。 电阻由表现出巨磁阻比（GMR）效应的材料组成。 各个电阻器的磁阻灵敏度通过退火产生。 电阻器的退火通过选择性地馈送足以达到退火到桥连接所需的温度的电流而进行。 根据桥接器的接线，电阻器可以单独或成对地提供GMR效应所需的特性。 作为电阻器的材料，特别地，使用不连续的多层材料，特别是NiFe / Ag的材料，其中通过在特定温度下的单一退火来生产GMR性质。

    Magnetoresistive sensor element with selective magnetization direction of the bias layer
    3.
    发明授权
    Magnetoresistive sensor element with selective magnetization direction of the bias layer 失效
    具有偏置层选择性磁化方向的磁阻传感器元件

    公开(公告)号：US06373247B1

    公开(公告)日：2002-04-16

    申请号：US09530699

    申请日：2000-04-03

    申请人： Klaus Marx ,  Hartmut Kittel ,  Franz Jost ,  Martin Freitag

    发明人： Klaus Marx ,  Hartmut Kittel ,  Franz Jost ,  Martin Freitag

    IPC分类号： G01B714

    CPC分类号： G01D5/145 ,  B82Y25/00 ,  G01B7/30 ,  G01R33/093

    摘要： A magnetoresistive sensor element, in particular an angle sensor element, has a first, magnetic layer (3) whose direction of magnetization represents a reference direction, a second, nonmagnetic layer (2) formed on the first layer (3), a third magnetic layer (1), formed on the second layer (2), whose direction of magnetization can be varied by an external magnetic field, and an additional layer consisting of a current conductor (5) for selective orientation of the direction of magnetization of the first layer (3). A current flow direction of an electric current that passes through the current conductor (5) can be switched to change the magnetization direction of the first magnetic layer (3) to create different reference directions. An insulation layer (4) for galvanic separation of the first magnetic layer (3) from the additional layer (5) is also provided between them.

    摘要翻译： 磁阻传感器元件，特别是角度传感器元件具有第一磁化层（3），其磁化方向表示参考方向，第二非磁性层（2）形成在第一层（3）上，第三磁体 形成在第二层（2）上的层（1），其磁化方向可以通过外部磁场变化，以及由电流导体（5）组成的附加层，用于选择性地取向第一 层（3）。 可以切换通过电流导体（5）的电流的电流流动方向，以改变第一磁性层（3）的磁化方向，以产生不同的参考方向。 在它们之间还设有用于将第一磁性层（3）与附加层（5）电隔离的绝缘层（4）。

    Electronic component
    4.
    发明授权
    Electronic component 失效
    电子元器件

    公开(公告)号：US06534978B1

    公开(公告)日：2003-03-18

    申请号：US09530698

    申请日：2000-05-03

    申请人： Christoph Treutler ,  Franz Jost ,  Martin Freitag

    发明人： Christoph Treutler ,  Franz Jost ,  Martin Freitag

    IPC分类号： G01R3302

    CPC分类号： H01L27/222 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16

    摘要： An electronic element, in particular a chip element, with at least one first magnetoresistive element that is disposed on a substrate and fulfills a sensor function and with at least one second magnetoresistive element that is disposed on the substrate and fulfills a memory function.

    摘要翻译： 一种电子元件，特别是芯片元件，具有至少一个第一磁阻元件，其被设置在基板上并实现传感器功能，并且至少一个第二磁阻元件设置在基板上并实现记忆功能。

    Magnetoresistive memory (MRAM)
    5.
    发明授权
    Magnetoresistive memory (MRAM) 失效
    磁阻记忆体（MRAM）

    公开(公告)号：US06744662B2

    公开(公告)日：2004-06-01

    申请号：US10436428

    申请日：2003-05-12

    申请人： Martin Freitag ,  Dietmar Gogl ,  Heinz Hoenigschmid ,  Stefan Lammers

    发明人： Martin Freitag ,  Dietmar Gogl ,  Heinz Hoenigschmid ,  Stefan Lammers

    IPC分类号： G11C1100

    CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/16

    摘要： The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.

    摘要翻译： 多个磁存储器单元的单元阵列的引线的形式通过偏离引线的正方形横截面而被优化，使得位于单元阵列平面中的写入电流的磁场分量充分快速地减小， 增加距离交叉点的距离。 单元阵列由列引线和行引线的矩阵构成。

    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    7.
    发明授权
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US07408803B2

    公开(公告)日：2008-08-05

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    8.
    发明申请
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US20060171196A1

    公开(公告)日：2006-08-03

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    MRAM configuration
    9.
    发明授权
    MRAM configuration 失效
    MRAM配置

    公开(公告)号：US06791871B2

    公开(公告)日：2004-09-14

    申请号：US10627904

    申请日：2003-07-25

    申请人： Martin Freitag ,  Thomas Roehr

    发明人： Martin Freitag ,  Thomas Roehr

    IPC分类号： G11C1100

    CPC分类号： H01L27/228 ,  G11C11/16

    摘要： An MRAM configuration has selection transistors and MTJ layer sequences lying in parallel with each other in a memory cell matrix. A considerable space saving can thus be achieved and therefore the MRAM configuration is less expensive to manufacture and has a greater packing density. In addition, the MRAM configuration allows a rapid read access with a minimal area requirement.

    摘要翻译： MRAM配置具有在存储单元矩阵中彼此平行的选择晶体管和MTJ层序列。 因此可以实现相当多的空间节省，因此MRAM配置制造成本较低并且具有更大的包装密度。 此外，MRAM配置允许以最小面积要求进行快速读取访问。