公开(公告)号：US06444565B1

公开(公告)日：2002-09-03

申请号：US09896204

申请日：2001-06-29

申请人： Christopher Adam Feild ,  Roy Charles Iggulden ,  Rajiv Vasant Joshi ,  Edward William Kiewra

发明人： Christopher Adam Feild ,  Roy Charles Iggulden ,  Rajiv Vasant Joshi ,  Edward William Kiewra

IPC分类号： H01L214761

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.

摘要翻译： 描述了定义通孔/互连结构的结构和过程。 该结构由反应离子蚀刻（RIE）形成，其中首先形成通孔和互连。 所公开的方法依赖于首先沉积具有等于通孔和互连的总高度的厚度的金属。 一旦通过形成硬掩模和光刻来描绘通孔，则使用光刻步骤对线进行图案化。 通过光刻和RIE在一个步骤中形成通孔和线，并保持界面完整性，导致高的电迁移性能。

公开(公告)号：US06433436B1

公开(公告)日：2002-08-13

申请号：US09320612

申请日：1999-05-26

申请人： Christopher Adam Feild ,  Roy Charles Iggulden ,  Rajiv Vasant Joshi ,  Edward William Kiewra

发明人： Christopher Adam Feild ,  Roy Charles Iggulden ,  Rajiv Vasant Joshi ,  Edward William Kiewra

IPC分类号： H01L2348

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.

摘要翻译： 描述了定义通孔/互连结构的结构和过程。 该结构由反应离子蚀刻（RIE）形成，其中首先形成通孔和互连。 所公开的方法依赖于首先沉积具有等于通孔和互连的总高度的厚度的金属。 一旦通过形成硬掩模和光刻来描绘通孔，则使用光刻步骤对线进行图案化。 通过光刻和RIE在一个步骤中形成通孔和线，并保持界面完整性，导致高的电迁移性能。

公开(公告)号：US5767789A

公开(公告)日：1998-06-16

申请号：US521902

申请日：1995-08-31

申请人： Ali Afzali-Ardakani ,  Michael John Brady ,  Dah-Weih Duan ,  Christopher Adam Feild ,  Harley Kent Heinrich ,  Paul Andrew Moskowitz

发明人： Ali Afzali-Ardakani ,  Michael John Brady ,  Dah-Weih Duan ,  Christopher Adam Feild ,  Harley Kent Heinrich ,  Paul Andrew Moskowitz

IPC分类号： H05K9/00 ,  H01Q1/52 ,  H01Q15/00 ,  H04B1/59 ,  H04B7/00 ,  H04Q1/00

CPC分类号： G06K7/10178 ,  H01Q1/526 ,  H01Q15/0013

摘要： Communication of information between the inside and the outside of an electrically conducting enclosure is performed through the use of a frequency selective surface on the electrically conducting enclosure, which permits passage of electromagnetic waves at particular frequencies, but prohibits waves of other frequencies from penetration. Thus, one or more objects contained within the electrically conducting enclosure, which include radio frequency tags attached to the objects containing information about the objects, may be monitored or interrogated by the transmission of an electromagnetic wave at the permitted frequency through the frequency selective surface. With such a system, control and inventory of enclosed objects may be performed while the EMI shielding function of the electrically conducting enclosure is maintained.

摘要翻译： 通过在导电外壳上使用频率选择表面来执行导电外壳内外信息的通信，这允许以特定频率通过电磁波，但是禁止其它频率的波穿透。 因此，可以通过通过频率选择表面以允许的频率的电磁波的传输来监视或询问包含在导电外壳内的一个或多个物体，其包括附接到包含关于物体的信息的物体的射频标签。 利用这样的系统，可以在保持导电外壳的EMI屏蔽功能的同时执行封闭物体的控制和库存。

公开(公告)号：US06451490B1

公开(公告)日：2002-09-17

申请号：US09709091

申请日：2000-11-08

申请人： William H. Advocate ,  Scott J. Bukofsky ,  Christopher Adam Feild ,  Donald J. Samuels

发明人： William H. Advocate ,  Scott J. Bukofsky ,  Christopher Adam Feild ,  Donald J. Samuels

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F1/30 ,  G03F1/32 ,  G03F7/70433

摘要： Image shortening in a photolithographic process is substantially reduced by using sub-resolution reticle features to alter the aerial image in the shortened regions. The use of such sub-resolution reticle features is simple to implement in a design system, and allows for increased feature aspect ratio as well as overlap to other critical features.

摘要翻译： 通过使用子分辨率掩模特征来改变缩短区域中的空间图像，光刻工艺中的图像缩短显着降低。 在设计系统中使用这样的分辨率分辨率特征是简单的，并且允许增加的特征宽高比以及与其它关键特征重叠。

公开(公告)号：US06215402B1

公开(公告)日：2001-04-10

申请号：US09191642

申请日：1998-11-13

申请人： Venkata S. Rao Kodukula ,  Dah-Weih Duan ,  Michael John Brady ,  Christopher Adam Feild ,  Paul Andrew Moskowitz

发明人： Venkata S. Rao Kodukula ,  Dah-Weih Duan ,  Michael John Brady ,  Christopher Adam Feild ,  Paul Andrew Moskowitz

IPC分类号： G08B1314

CPC分类号： G06K19/07786 ,  G06K7/0008 ,  G06K19/0723 ,  G06K19/07749 ,  G08B13/2417 ,  G08B13/2431 ,  G08B13/2437 ,  G08B13/2442 ,  G08B13/2462

摘要： A radio-frequency identification (RFID) transponder (tag) in accordance with the principles of the invention includes a patch antenna. The patch antenna may be co-located with RFID circuitry and an impedance matching circuit on one side of a substrate. A ground plane may be formed on the opposite side of the substrate. A quarter wave transformer may provide an “RF short” to ground to connect the RFID circuitry on one side of the substrate with a ground plane located on the opposite side of the substrate.

摘要翻译： 根据本发明的原理的射频识别（RFID）应答器（标签）包括贴片天线。 贴片天线可以与RFID电路和位于衬底一侧的阻抗匹配电路共同定位。 可以在基板的相对侧上形成接地层。 一个四分之一波长的变压器可以提供一个“射频短路”到地面，以连接基板的一侧上的RFID电路与位于基板的相对一侧的接地平面。