摘要:
A radio-frequency identification (RFID) transponder (tag) in accordance with the principles of the invention includes a patch antenna. The patch antenna may be co-located with RFID circuitry and an impedance matching circuit on one side of a substrate. A ground plane may be formed on the opposite side of the substrate. A quarter wave transformer may provide an “RF short” to ground to connect the RFID circuitry on one side of the substrate with a ground plane located on the opposite side of the substrate.
摘要:
Communication of information between the inside and the outside of an electrically conducting enclosure is performed through the use of a frequency selective surface on the electrically conducting enclosure, which permits passage of electromagnetic waves at particular frequencies, but prohibits waves of other frequencies from penetration. Thus, one or more objects contained within the electrically conducting enclosure, which include radio frequency tags attached to the objects containing information about the objects, may be monitored or interrogated by the transmission of an electromagnetic wave at the permitted frequency through the frequency selective surface. With such a system, control and inventory of enclosed objects may be performed while the EMI shielding function of the electrically conducting enclosure is maintained.
摘要:
A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.
摘要:
A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.
摘要:
Image shortening in a photolithographic process is substantially reduced by using sub-resolution reticle features to alter the aerial image in the shortened regions. The use of such sub-resolution reticle features is simple to implement in a design system, and allows for increased feature aspect ratio as well as overlap to other critical features.