Method for making a write-once memory device read compatible with a write-many file system
    2.
    发明授权
    Method for making a write-once memory device read compatible with a write-many file system 有权
    使一个写入一次的存储器件读取与多写入文件系统兼容的方法

    公开(公告)号:US06895490B1

    公开(公告)日:2005-05-17

    申请号:US10023468

    申请日:2001-12-14

    IPC分类号: G06F12/00 G06F12/10

    摘要: The preferred embodiments described herein provide a method for making a write-once memory device read compatible with a write-many file system. In one preferred embodiment, a method for re-writing to a logical address of a write-once memory device is provided. A physical-to-logical address map is built from data stored in the memory device that associates individual physical addresses with individual logical addresses. When a logical address is re-written, data associating that logical address with a new physical address is stored, and data associating that logical address with an old physical address is invalidated. When the logical address is read, the physical-to-logical address map is used to read the new physical address instead of the old physical address. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another.

    摘要翻译: 这里描述的优选实施例提供了一种用于使与一个多写入文件系统兼容的一次写入存储器件读取的方法。 在一个优选实施例中,提供了一种用于重写到一次写入存储器件的逻辑地址的方法。 从存储在存储器设备中的数据构建物理到逻辑地址映射,其将各个物理地址与各个逻辑地址相关联。 当重写逻辑地址时,存储将该逻辑地址与新的物理地址相关联的数据,并且将该逻辑地址与旧的物理地址相关联的数据无效。 当读取逻辑地址时,物理到逻辑地址映射用于读取新的物理地址而不是旧的物理地址。 提供了其它优选实施方案,并且本文所述的各优选实施方案可以单独使用或彼此组合使用。

    Integrated systems using vertically-stacked three-dimensional memory cells
    3.
    发明授权
    Integrated systems using vertically-stacked three-dimensional memory cells 有权
    使用垂直堆叠的三维存储单元的集成系统

    公开(公告)号:US06765813B2

    公开(公告)日:2004-07-20

    申请号:US10185588

    申请日:2002-06-27

    IPC分类号: G11C502

    摘要: Support circuitry for a three-dimensional memory array is formed in a substrate at least partially under the three-dimensional memory array and defines open area in the substrate under the three-dimensional memory array. In one preferred embodiment, one or more memory arrays are formed at least partially in the open area under the three-dimensional memory array, while in another preferred embodiment, logic circuitry implementing one or more functions is formed at least partially in the open area under the three-dimensional memory array. In yet another preferred embodiment, both one or more memory arrays and logic circuitry are formed at least partially in the open area under the three-dimensional memory array. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

    摘要翻译: 用于三维存储器阵列的支持电路至少部分地在三维存储器阵列的下方形成在衬底中,并且在三维存储器阵列下的衬底中限定开放区域。 在一个优选实施例中,至少部分地在三维存储器阵列下的开放区域中形成一个或多个存储器阵列,而在另一个优选实施例中,实现一个或多个功能的逻辑电路至少部分地形成在开放区域 三维记忆阵列。 在另一优选实施例中,一个或多个存储器阵列和逻辑电路至少部分地形成在三维存储器阵列下方的开放区域中。 提供了其它优选实施方案,并且每个优选实施方案可以单独使用或彼此组合使用。

    Three-dimensional memory cache system
    4.
    发明授权
    Three-dimensional memory cache system 有权
    三维内存缓存系统

    公开(公告)号:US06711043B2

    公开(公告)日:2004-03-23

    申请号:US10186356

    申请日:2002-06-27

    IPC分类号: G11C502

    摘要: The preferred embodiments described herein provide a three-dimensional memory cache system. In one preferred embodiment, a modular memory device removably connectable to a host device is provided. The modular memory device comprises a substrate, a cache memory array, a three-dimensional primary memory array, and a modular housing. The cache memory array and the three-dimensional primary memory array can be on the same or separate substrates in the modular housing. In another preferred embodiment, an integrated circuit is provided comprising a substrate, a cache memory array in the substrate, and a three-dimensional primary memory array above the substrate. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

    摘要翻译: 本文所述的优选实施例提供三维存储器高速缓存系统。 在一个优选实施例中,提供了可移除地连接到主机设备的模块化存储设备。 模块化存储器件包括衬底,高速缓存存储器阵列,三维主存储器阵列和模块化壳体。 缓存存储器阵列和三维主存储器阵列可以在模块化壳体中的相同或分开的基板上。 在另一个优选实施例中,提供集成电路,其包括衬底,衬底中的高速缓冲存储器阵列以及衬底上方的三维主存储器阵列。 提供了其它优选实施方案,并且每个优选实施方案可以单独使用或彼此组合使用。

    Method for altering a word stored in a write-once memory device
    5.
    发明授权
    Method for altering a word stored in a write-once memory device 失效
    用于改变存储在一次写入存储器件中的字的方法

    公开(公告)号:US06901549B2

    公开(公告)日:2005-05-31

    申请号:US10023200

    申请日:2001-12-14

    摘要: The preferred embodiments described herein provide a method for altering a word stored in a write-once memory device. In one preferred embodiment, a write-once memory device is provided storing a word comprising a plurality of data bits and a plurality of syndrome bits. The word is altered by identifying X bit(s) in the word that are in an un-programmed state and switching the X bit(s) from the un-programmed state to a programmed state, where X is sufficient to introduce an uncorrectable error in the word. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

    摘要翻译: 本文所述的优选实施例提供了一种用于改变存储在一次写入存储器件中的字的方法。 在一个优选实施例中,提供了一次写入存储器件,其存储包括多个数据位和多个校正子位的字。 通过识别字处于非编程状态的X位,并将X位从未编程状态切换到编程状态来改变该字,其中X足以引入不可校正的错误 在这个词中。 提供了其它优选实施方案,并且每个优选实施方案可以单独使用或彼此组合使用。

    Method and data storage device for writing a minimum number of memory cells in a memory device
    6.
    发明授权
    Method and data storage device for writing a minimum number of memory cells in a memory device 失效
    用于将最少数量的存储器单元写入存储器件的方法和数据存储装置

    公开(公告)号:US06651133B2

    公开(公告)日:2003-11-18

    申请号:US10253218

    申请日:2002-09-23

    IPC分类号: G06F1200

    摘要: The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.

    摘要翻译: 本文描述的优选实施例提供了一种用于其的存储器件和方法。 在一个优选实施例中,提出了一种使用文件系统动态地响应所指示的第一和第二一次写入存储器件的最小数量的存储器单元的可变性的方法。 在另一个优选实施例中,描述了一种用于重写存储器件中的数据的方法,其中在写入破坏性图案之后忽略错误代码。 在另一个优选实施例中,提出了一种方法,其中在已经为要存储在存储器件中的文件分配存储器块之后,确定该块中的可用线。 另一个优选实施例涉及在用于文件结构或文件系统结构的存储器装置中保留至少一个存储器单元。 还提供了一种存储器件,其中至少两个文件系统的文件系统结构存储在同一个存储器分区中。 此外,公开了用于永久地防止存储在存储器件中的数据的修改和用于识别存储数据的存储单元的方法。

    Memory device and method for storing and reading data in a write-once memory array
    7.
    发明授权
    Memory device and method for storing and reading data in a write-once memory array 有权
    用于在一次写入存储器阵列中存储和读取数据的存储器件和方法

    公开(公告)号:US06996660B1

    公开(公告)日:2006-02-07

    申请号:US09877720

    申请日:2001-06-08

    IPC分类号: G11C7/00 G11C11/34

    CPC分类号: G11C17/16 G11C17/146

    摘要: The preferred embodiments described herein provide a memory device and method for storing and reading data in a write-once memory array. In one preferred embodiment, a plurality of bits representing data is inverted and stored in a write-once memory array. When the inverted plurality of bits is read from the memory array, the bits are inverted to provide the data in its original, non-inverted configuration. By storing data bits in an inverted form, the initial, un-programmed digital state of the memory array is redefined as the alternative, programmed digital state. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another. For example, the embodiments in which data bits are inverted can be used alone or in combination with the embodiments in which data is redirected.

    摘要翻译: 本文描述的优选实施例提供了一种用于在一次写入存储器阵列中存储和读取数据的存储器件和方法。 在一个优选实施例中,表示数据的多个位被反转并存储在一次写入存储器阵列中。 当从存储器阵列中读取反相多位时,这些位被反转以便以其原始的非反相配置提供数据。 通过以倒数形式存储数据位,存储器阵列的初始未编程数字状态被重新定义为备选的编程数字状态。 提供了其它优选实施方案,并且本文所述的各优选实施方案可以单独使用或彼此组合使用。 例如,数据位被反转的实施例可以单独使用或与数据重定向的实施例组合使用。

    Methods for permanently preventing modification of a partition or file
    8.
    发明授权
    Methods for permanently preventing modification of a partition or file 有权
    永久防止修改分区或文件的方法

    公开(公告)号:US06694415B2

    公开(公告)日:2004-02-17

    申请号:US10253022

    申请日:2002-09-23

    IPC分类号: G06F1216

    摘要: The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.

    摘要翻译: 本文描述的优选实施例提供了一种用于其的存储器件和方法。 在一个优选实施例中,提出了一种使用文件系统动态地响应所指示的第一和第二一次写入存储器件的最小数量的存储器单元的可变性的方法。 在另一个优选实施例中,描述了一种用于重写存储器件中的数据的方法,其中在写入破坏性图案之后忽略错误代码。 在另一个优选实施例中,提出了一种方法,其中在已经为要存储在存储器件中的文件分配存储器块之后,确定该块中的可用线。 另一个优选实施例涉及在用于文件结构或文件系统结构的存储器装置中保留至少一个存储器单元。 还提供了一种存储器件,其中至少两个文件系统的文件系统结构存储在同一个存储器分区中。 此外,公开了用于永久地防止存储在存储器件中的数据的修改和用于识别存储数据的存储单元的方法。

    Memory device and method for storing and reading a file system structure in a write-once memory array
    9.
    发明授权
    Memory device and method for storing and reading a file system structure in a write-once memory array 有权
    用于在一次写入存储器阵列中存储和读取文件系统结构的存储器件和方法

    公开(公告)号:US07003619B1

    公开(公告)日:2006-02-21

    申请号:US09877719

    申请日:2001-06-08

    IPC分类号: G11C7/00 G11C11/34

    摘要: The preferred embodiments described herein provide a memory device and method for storing and reading a file system structure in a write-once memory array. In one preferred embodiment, a plurality of bits representing a file system structure is inverted and stored in a write-once memory array. When the inverted plurality of bits is read from the memory array, the bits are inverted to provide the file system structure bits in their original, non-inverted configuration. With this preferred embodiment, a file system structure can be updated to reflect data stored in the memory array after the file system structure was written. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another.

    摘要翻译: 本文描述的优选实施例提供了一种用于在一次写入存储器阵列中存储和读取文件系统结构的存储器件和方法。 在一个优选实施例中,表示文件系统结构的多个位被反转并存储在一次写入存储器阵列中。 当从存储器阵列中读出反相多位时,这些位被反转,以提供其原始的非倒置配置的文件系统结构位。 利用该优选实施例,可以更新文件系统结构以在写入文件系统结构之后反映存储在存储器阵列中的数据。 提供了其它优选实施方案,并且本文所述的各优选实施方案可以单独使用或彼此组合使用。

    Configuring file structures and file system structures in a memory device
    10.
    发明授权
    Configuring file structures and file system structures in a memory device 有权
    在存储设备中配置文件结构和文件系统结构

    公开(公告)号:US06925545B2

    公开(公告)日:2005-08-02

    申请号:US10806826

    申请日:2004-03-22

    摘要: The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.

    摘要翻译: 本文描述的优选实施例提供了一种用于其的存储器件和方法。 在一个优选实施例中,提出了一种使用文件系统动态地响应所指示的第一和第二一次写入存储器件的最小数量的存储器单元的可变性的方法。 在另一个优选实施例中,描述了一种用于重写存储器件中的数据的方法,其中在写入破坏性图案之后忽略错误代码。 在另一个优选实施例中,提出了一种方法,其中在已经为要存储在存储器件中的文件分配存储器块之后,确定该块中的可用线。 另一个优选实施例涉及在用于文件结构或文件系统结构的存储器装置中保留至少一个存储器单元。 还提供了一种存储器件,其中至少两个文件系统的文件系统结构存储在同一个存储器分区中。 此外,公开了用于永久地防止存储在存储器件中的数据的修改和用于识别存储数据的存储单元的方法。