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    Color charge-coupled device
    1.
    发明授权
    Color charge-coupled device 失效
    彩色电荷耦合器件

    公开(公告)号：US5895943A

    公开(公告)日：1999-04-20

    申请号：US902957

    申请日：1997-07-30

    申请人： Chul Ho Park ,  Jin Seop Shim ,  Kwang Bok Song

    发明人： Chul Ho Park ,  Jin Seop Shim ,  Kwang Bok Song

    IPC分类号： H01L27/148 ,  H01L29/768

    CPC分类号： H01L27/14868 ,  H01L27/14843

    摘要： A color charge-coupled device is disclosed including plural light detectors corresponding to first to third colors and plural charge transmission regions on a semiconductor substrate; a pad on one side of the substrate excluding a portion where the light detectors and charge transmission regions are formed; a planarizing film on the substrate excluding the pad; microlenses on the planarizing film above the light detectors; and first to third color filter layers on each microlens excluding the edge portion.

    摘要翻译： 公开了一种彩色电荷耦合器件，其包括对应于半导体衬底上的第一至第三颜色和多个电荷透射区域的多个光检测器; 除了形成光检测器和电荷传输区域的部分之外的衬底的一侧上的焊盘; 在所述衬底上的除所述衬垫之外的平坦化膜; 在光检测器上方的平坦化膜上的微透镜; 以及除了边缘部分之外的每个微透镜上的第一至第三滤色器层。

    Color charge-coupled device and method of manufacturing the same
    2.
    发明授权
    Color charge-coupled device and method of manufacturing the same 失效
    彩色电荷耦合器件及其制造方法

    公开(公告)号：US5677200A

    公开(公告)日：1997-10-14

    申请号：US442879

    申请日：1995-05-17

    申请人： Chul Ho Park ,  Jin Seop Shim ,  Kwang Bok Song

    发明人： Chul Ho Park ,  Jin Seop Shim ,  Kwang Bok Song

    IPC分类号： H01L27/148 ,  H01L31/18 ,  G02F1/29 ,  H01L21/70 ,  H01L31/232

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14843 ,  H01L27/14868

    摘要： A method of manufacturing a color charge-coupled device is disclosed including the steps of alternately forming a plurality of light detectors corresponding to first to third colors and a plurality of charge transmission regions on a semiconductor substrate; forming a pad on one side of the substrate excluding a portion where the light detectors and charge transmission regions are formed; forming a planarizing film on the substrate excluding the pad; coating a microlens material on the planarizing film and patterning the microlens material so as to be left only on the planarizing film above the light detectors; thermally flowing the microlens material, to thereby form microlenses on the planarizing film above the light detectors; and hard-baking first to third dyeing layer, to thereby form first to third color filter layers on each microlens excluding the edge portion.

    摘要翻译： 公开了一种制造彩色电荷耦合器件的方法，包括以下步骤：在半导体衬底上交替地形成对应于第一至第三颜色的多个光检测器和多个电荷透射区域; 在除了形成有光检测器和电荷传输区域的部分之外的基板的一侧上形成焊盘; 在除了焊盘之外的衬底上形成平坦化膜; 在平坦化膜上涂覆微透镜材料并对微透镜材料进行图案化，以仅留在光检测器上方的平坦化膜上; 使微透镜材料热流动，从而在光检测器上方的平坦化膜上形成微透镜; 和硬烘烤第一至第三染色层，从而在除了边缘部分之外的每个微透镜上形成第一至第三滤色器层。

    Method of forming a charge coupled device with stripe layers corresponding to CCD regions
    4.
    发明授权
    Method of forming a charge coupled device with stripe layers corresponding to CCD regions 有权
    形成具有对应于CCD区域的条纹层的电荷耦合器件的方法

    公开(公告)号：US6093582A

    公开(公告)日：2000-07-25

    申请号：US212605

    申请日：1998-12-16

    申请人： Jin Seop Shim

    发明人： Jin Seop Shim

    IPC分类号： H01L27/14 ,  H01L21/304 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L21/00

    CPC分类号： H01L27/14627 ,  H01L27/14868 ,  H01L31/02162

    摘要： A charge coupled device and a method of manufacturing a charged coupled device includes a semiconductor substrate, a plurality of photoelectrical conversion cells formed in the semiconductor substrate in a matrix form, a plurality of vertical charge coupled device regions formed between the plurality of photoelectrical conversion cells, a plurality of stripe layers formed on the semiconductor substrate and corresponding to the plurality of vertical charge coupled device regions, and a plurality of microlenses formed on the semiconductor substrate and corresponding to the plurality of photoelectrical conversion cells.

    摘要翻译： 电荷耦合器件和制造充电耦合器件的方法包括半导体衬底，以矩阵形式形成在半导体衬底中的多个光电转换单元，形成在多个光电转换单元之间的多个垂直电荷耦合器件区域 形成在所述半导体衬底上并对应于所述多个垂直电荷耦合器件区域的多个条纹层以及形成在所述半导体衬底上并对应于所述多个光电转换单元的多个微透镜。

    Charge coupled device with stripe layers corresponding to CCD regions
    5.
    发明授权
    Charge coupled device with stripe layers corresponding to CCD regions 失效
    电荷耦合器件，具有对应于CCD区域的条纹层

    公开(公告)号：US5900655A

    公开(公告)日：1999-05-04

    申请号：US848555

    申请日：1997-04-28

    申请人： Jin Seop Shim

    发明人： Jin Seop Shim

    IPC分类号： H01L27/14 ,  H01L21/304 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L29/768

    CPC分类号： H01L27/14627 ,  H01L27/14868 ,  H01L31/02162

    摘要： A charge coupled device and a method of manufacturing a charged coupled device includes a semiconductor substrate, a plurality of photoelectrical conversion cells formed in the semiconductor substrate in a matrix form, a plurality of vertical charge coupled device regions formed between the plurality of photoelectrical conversion cells, a plurality of stripe layers formed on the semiconductor substrate and corresponding to the plurality of vertical charge coupled device regions, and a plurality of microlenses formed on the semiconductor substrate and corresponding to the plurality of photoelectrical conversion cells.

    摘要翻译： 电荷耦合器件和制造充电耦合器件的方法包括半导体衬底，以矩阵形式形成在半导体衬底中的多个光电转换单元，形成在多个光电转换单元之间的多个垂直电荷耦合器件区域 形成在所述半导体衬底上并对应于所述多个垂直电荷耦合器件区域的多个条纹层以及形成在所述半导体衬底上并对应于所述多个光电转换单元的多个微透镜。

    Solid state CCD image sensor having a light shielding layer
    6.
    发明授权
    Solid state CCD image sensor having a light shielding layer 有权
    具有遮光层的固态CCD图像传感器

    公开(公告)号：US06627929B2

    公开(公告)日：2003-09-30

    申请号：US09879061

    申请日：2001-06-13

    申请人： Jin Seop Shim ,  Seo Kyu Lee

    发明人： Jin Seop Shim ,  Seo Kyu Lee

    IPC分类号： H01L31062

    CPC分类号： H01L27/14806 ,  H01L27/14818

    摘要： Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.

    摘要翻译： 提供了一种固态图像传感器，其适于通过增强器件的形态来简化工艺，并且具有形成在半导体衬底上的光电二极管，以及设置在光电二极管周围的传输门，以传输由 光电二极管，固态图像传感器包括：绝缘层，形成在半导体衬底的整个表面上，并具有暴露传输门限定部分的接触孔; 形成为包括接触孔的内部的金属线; 以及与金属线形成在同一层中而不与光电二极管的上部重叠的遮光层。

    Solid state image sensor and method for fabricating the same
    7.
    发明授权
    Solid state image sensor and method for fabricating the same 有权

    公开(公告)号：US06300157B1

    公开(公告)日：2001-10-09

    申请号：US09170101

    申请日：1998-10-13

    申请人： Jin Seop Shim ,  Seo Kyu Lee

    发明人： Jin Seop Shim ,  Seo Kyu Lee

    IPC分类号： H01L2100

    CPC分类号： H01L27/14806 ,  H01L27/14818

    摘要： Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.