公开(公告)号：US06300157B1

公开(公告)日：2001-10-09

申请号：US09170101

申请日：1998-10-13

申请人： Jin Seop Shim ,  Seo Kyu Lee

发明人： Jin Seop Shim ,  Seo Kyu Lee

IPC分类号： H01L2100

CPC分类号： H01L27/14806 ,  H01L27/14818

摘要： Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.

公开(公告)号：US06627929B2

公开(公告)日：2003-09-30

申请号：US09879061

申请日：2001-06-13

申请人： Jin Seop Shim ,  Seo Kyu Lee

发明人： Jin Seop Shim ,  Seo Kyu Lee

IPC分类号： H01L31062

CPC分类号： H01L27/14806 ,  H01L27/14818

摘要： Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.

摘要翻译： 提供了一种固态图像传感器，其适于通过增强器件的形态来简化工艺，并且具有形成在半导体衬底上的光电二极管，以及设置在光电二极管周围的传输门，以传输由 光电二极管，固态图像传感器包括：绝缘层，形成在半导体衬底的整个表面上，并具有暴露传输门限定部分的接触孔; 形成为包括接触孔的内部的金属线; 以及与金属线形成在同一层中而不与光电二极管的上部重叠的遮光层。

公开(公告)号：US06610557B2

公开(公告)日：2003-08-26

申请号：US10152043

申请日：2002-05-22

申请人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

发明人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

IPC分类号： H01L2100

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

公开(公告)号：US06933974B2

公开(公告)日：2005-08-23

申请号：US09870943

申请日：2001-06-01

申请人： Seo Kyu Lee

发明人： Seo Kyu Lee

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/14

CPC分类号： H04N5/3575

摘要： A CMOS image sensor that outputs signal data before outputs reset data, and a driving method therefor. The CMOS image sensor includes a pixel sensor, a data I/O line, a double sampling circuit and an output circuit. The pixel sensor generates signal data and reset data. The signal data has a voltage level depending on an amount of photo-charge produced in response to energy received externally. The reset data is produced in a reset mode. The data I/O line transfers the generated signal data and the reset data. The double sampling circuit samples the signal data and then the reset data, from the data I/O line, and drives an output terminal. The output circuit outputs data related to a voltage level of the output terminal.

摘要翻译： 在输出复位数据之前输出信号数据的CMOS图像传感器及其驱动方法。 CMOS图像传感器包括像素传感器，数据I / O线，双采样电路和输出电路。 像素传感器生成信号数据和复位数据。 信号数据具有取决于响应于从外部接收的能量产生的光电荷量的电压电平。 复位数据以复位模式产生。 数据I / O线传送生成的信号数据和复位数据。 双采样电路从数据I / O线对信号数据和复位数据进行采样，并驱动输出端。 输出电路输出与输出端子的电压电平相关的数据。

公开(公告)号：US06366322B1

公开(公告)日：2002-04-02

申请号：US09102551

申请日：1998-06-22

申请人： Seo Kyu Lee ,  Yong Park

发明人： Seo Kyu Lee ,  Yong Park

IPC分类号： H04N5335

CPC分类号： H01L27/14825

摘要： The present invention relates to a HCCD of a CCD image sensor comprising a channel stop region, a BCCD channel formed on the channel stop region, a plurality of first poly gates and a plurality of second poly gates formed on the BCCD channel and alternately arranged in a partially overlapping manner, and a dummy gate formed on the BCCD channel between first and second selected ones of the second poly gates.

摘要翻译： 本发明涉及一种CCD图像传感器的HCCD，包括通道停止区域，形成在通道停止区域上的BCCD通道，多个第一多晶硅栅极和形成在BCCD通道上的多个第二多晶硅栅极，并交替地布置在 部分重叠的方式，以及形成在BCCD通道上的第一和第二选择的第二多晶硅门之间的虚拟栅极。

公开(公告)号：US06570144B1

公开(公告)日：2003-05-27

申请号：US09722727

申请日：2000-11-28

申请人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

发明人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

IPC分类号： H01L2700

CPC分类号： H04N5/374

摘要： An active pixel circuit in a CMOS image sensor includes a photodiode to accumulate charge due to incident light. A first transfer transistor is arranged to pass a transfer signal when turned on by a column selection signal. A second transfer transistor transfers the accumulated charge from the photodiode to a first floating node when turned on by the transfer signal from the first transfer transistor. A source follow driver transistor changes the potential of a second floating node according to the charge transferred to the first floating node. A line selecting transistor reads out the potential of the second floating node when turned on by a line selection signal, and a reset transistor resets the charges accumulated in the first floating node when the reading out operation is finished.

摘要翻译： CMOS图像传感器中的有源像素电路包括由入射光积累电荷的光电二极管。 第一传输晶体管被布置成当通过列选择信号导通时传递传输信号。 第二传输晶体管在通过来自第一传输晶体管的传输信号导通时将累积的电荷从光电二极管传送到第一浮动节点。 源跟随驱动器晶体管根据传送到第一浮动节点的电荷来改变第二浮动节点的电位。 线选择晶体管通过线选择信号读出第二浮动节点的电位，并且当读出操作结束时，复位晶体管复位在第一浮动节点中累积的电荷。

公开(公告)号：US06558985B2

公开(公告)日：2003-05-06

申请号：US10086520

申请日：2002-03-04

申请人： Seo Kyu Lee

发明人： Seo Kyu Lee

IPC分类号： H01L2714

CPC分类号： H01L29/42396 ,  H01L27/14831

摘要： A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first transfer gate sequentially formed between the photodiodes arranged in the row direction, a block insulating layer formed along the center of the first transfer gate, a second interlevel insulating layer formed on the first transfer gate, second and third transfer gates formed on the first transfer gate, being isolated from each other on the block insulating layer, a third interlevel insulating layer formed on the second and third transfer gates, and a fourth transfer gate formed on the third interlevel insulating layer, being placed on the second and third transfer gates.

公开(公告)号：US06621109B1

公开(公告)日：2003-09-16

申请号：US09639230

申请日：2000-08-16

申请人： Yong Park ,  Seo Kyu Lee

发明人： Yong Park ,  Seo Kyu Lee

IPC分类号： H01L27148

CPC分类号： H01L27/14825 ,  H01L27/14806

摘要： A charge coupled device includes a plurality of photoelectric conversion regions; a plurality of vertical charge coupled devices (VCCDs) provided between the photoelectric conversion regions for transmission of charges generated at the photoelectric conversion regions in a first direction; and a horizontal charge coupled device (HCCD) coupled to the VCCDs and having a channel region including a plurality of channels for transmission of the charges previously transmitted through the VCCDs in a second direction. The channel region is formed such that one of the plurality of channels has a higher potential than the remaining channels. The remaining channels have potentials that gradually become lower than the highest potential moving in a direction away from the channel with the highest potential. The channel region transmits the charges within the HCCD so that the charges are gathered together centered around the channel having the highest potential during transmission of the charges.

摘要翻译： 电荷耦合器件包括多个光电转换区域; 设置在光电转换区域之间的多个垂直电荷耦合器件（VCCD），用于在第一方向上传输在光电转换区域产生的电荷; 以及耦合到VCCD的水平电荷耦合器件（HCCD），并具有包括多个通道的沟道区，用于传输先前通过VCCD在第二方向上传输的电荷。 沟道区形成为使得多个沟道中的一个具有比剩余沟道更高的电位。 剩余的通道具有逐渐变得低于远离具有最高电位的通道的方向移动的最高电位的电位。 信道区域在HCCD内传输电荷，使得在传输电荷期间以电位最高的信道为中心收集电荷。

公开(公告)号：US06528833B2

公开(公告)日：2003-03-04

申请号：US09883493

申请日：2001-06-19

申请人： Seo Kyu Lee ,  Dae Sung Min

发明人： Seo Kyu Lee ,  Dae Sung Min

IPC分类号： H01L31062

CPC分类号： H01L27/14609

摘要： A CMOS active pixel of increased sensitivity includes a floating diffusion layer, a photo-diode, a reset circuit and an output circuit The floating diffusion layer is of a first dopant type and receives a signal charge. The photo-diode generates the signal charge depending on an energy inputted thereto and transfers the signal charge to the floating diffusion layer. The photo-diode has first and second lower diode dopant layers of the first dopant type and an upper diode dopant layer of a second dopant type. The polarity of the second dopant type is opposite to that of the first dopant type. The first and second lower diode dopant layers are formed to contact a lower portion of the upper diode dopant layer. The upper diode dopant layer and the first lower diode dopant layer are formed to contact the floating diffusion layer. The second lower diode dopant layer is formed to contact the first lower diode dopant layer. The reset circuit controls a voltage level of the floating diffusion layer to a reset voltage level in response to a control signal. A doping concentration of the first lower diode dopant layer is less than that of the floating diffusion layer. A doping concentration of the second lower diode dopant layer is less than that of the first lower diode dopant layer.

摘要翻译： 增加灵敏度的CMOS有源像素包括浮动扩散层，光电二极管，复位电路和输出电路。浮动扩散层是第一掺杂剂类型并且接收信号电荷。 光电二极管根据输入的能量产生信号电荷，并将信号电荷传送到浮动扩散层。 光电二极管具有第一掺杂剂类型的第一和第二下二极管掺杂剂层和第二掺杂剂类型的上二极管掺杂剂层。 第二掺杂剂类型的极性与第一掺杂剂类型的极性相反。 形成第一和第二低二极管掺杂剂层以接触上二极管掺杂剂层的下部。 形成上二极管掺杂剂层和第一下二极管掺杂剂层以接触浮动扩散层。 形成第二低二极管掺杂剂层以接触第一低二极管掺杂剂层。 复位电路响应于控制信号将浮动扩散层的电压电平控制到复位电压电平。 第一低二极管掺杂剂层的掺杂浓度小于浮动扩散层的掺杂浓度。 第二低二极管掺杂剂层的掺杂浓度小于第一低二极管掺杂剂层的掺杂浓度。

公开(公告)号：US06433373B1

公开(公告)日：2002-08-13

申请号：US09712195

申请日：2000-11-15

申请人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

发明人： Seo Kyu Lee ,  Hang Kyoo Kim ,  Jung Soon Shin

IPC分类号： H01L31062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： A CMOS image sensor and a fabrication method thereof are disclosed. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

摘要翻译： 公开了CMOS图像传感器及其制造方法。 传感器具有延伸到有源区的下部的光电二极管区，其中形成传输门，感测门和复位栅，从而增强了CMOS图像传感器的灵敏度。 本发明的传感器包括具有第一区域和邻近第一区域的第二区域的单元区域，具有第一PDN区域的PDN区域，该第一PDN区域从第一区域中的表面沿垂直方向延伸到体内 附图中的表面和从附图中的水平方向从第一PDN区域的下部延伸到第二区域的下部的第二PDN区域，以及浮动扩散区域和复位区域 其形成在第二PDN区域上方的第二区域的表面中。