POT FOR VERTICAL WALL, AND MULTI-FILTER AND PORT SUPPORT FRAME USED THEREFOR
    1.
    发明申请
    POT FOR VERTICAL WALL, AND MULTI-FILTER AND PORT SUPPORT FRAME USED THEREFOR 审中-公开
    用于垂直墙的POT,以及多个过滤器和端口支持框架

    公开(公告)号:US20130227884A1

    公开(公告)日:2013-09-05

    申请号:US13884409

    申请日:2011-10-27

    IPC分类号: A01G9/02

    摘要: Disclosed is a port for a vertical wall, a multi-filter used therein, and a port support frame. In the port a cover is installed in a port body having an interior space. A plurality of body filter holes penetrate the port body. Soil in which plants are set is filled in the interior space. A plurality of vegetation holes through which the plants set in the soil are formed in the cover, and cover filter holes are formed between the vegetation holes at locations corresponding to the body filter holes. Multi-filters penetrate the body filter holes, the cover filter holes, and the soil. A support tubular body forms an outer appearance of the multi-filter, and a filtering case is installed in the support tubular body.

    摘要翻译: 公开了一种用于垂直壁的端口,其中使用的多过滤器和端口支撑框架。 在端口中,盖子安装在具有内部空间的端口体中。 多个主体过滤孔穿透端口主体。 设置植物的土壤填充在内部空间中。 植物在土壤中形成多个植被孔,盖子上形成有与过滤孔对应的位置的植被孔之间的过滤孔。 多过滤器穿透身体过滤孔,盖过滤孔和土壤。 支撑管体形成多过滤器的外观,并且过滤壳体安装在支撑管体中。

    MEMS varactor for measuring RF power
    3.
    发明授权
    MEMS varactor for measuring RF power 失效
    用于测量射频功率的MEMS变容二极管

    公开(公告)号:US06803774B2

    公开(公告)日:2004-10-12

    申请号:US10253383

    申请日:2002-09-23

    申请人: Chul Hong Park

    发明人: Chul Hong Park

    IPC分类号: G01R2726

    CPC分类号: G01R21/10

    摘要: A meter for measuring the root-mean-squared potential of an AC signal characterized by a frequency f is disclosed. The meter includes first and second capacitors. The AC signal is applied to the first capacitor, which includes first and second plates separated by a distance that depends on the root-mean-squared potential of the AC signal, but not on changes in the AC signal that occur over a time of 1/f. The second capacitor has first and second plates separated by a distance that depends on the separation of the first and second plates in the first capacitor. A detection circuit measures the capacitance of the second capacitor. The first plate of the first capacitor is preferably connected to the first plate of the second capacitor by a non-conducting mechanical link.

    摘要翻译: 公开了一种用于测量以频率f为特征的AC信号的均方根电位的仪表。 仪表包括第一和第二电容器。 交流信号被施加到第一电容器,该电容器包括第一和第二板,其间隔一定距离,该距离取决于交流信号的均方根电位,但不包括在1个时间内发生的交流信号的变化 /F。 第二电容器具有分隔第一和第二板在第一电容器中的间隔的距离的第一和第二板。 检测电路测量第二电容器的电容。 第一电容器的第一板优选地通过不导电的机械连接件连接到第二电容器的第一板。

    Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection
    5.
    发明授权
    Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection 失效
    具有片上静电放电保护的增强型伪晶体高电子迁移率晶体管的集成电路

    公开(公告)号:US06984853B2

    公开(公告)日:2006-01-10

    申请号:US10789301

    申请日:2004-02-26

    申请人: Chul Hong Park

    发明人: Chul Hong Park

    IPC分类号: H01L29/739

    摘要: An integrated circuit (IC) with high electron mobility transistors, such as enhancement mode pseudomorphic high electron mobility transistors (E-pHEMTs) and method for fabricating the IC utilizes an increased gate-to-drain etch recess spacing in some of the high electron mobility transistors to provide on-chip electrostatic discharge protection. The use of the increased gate-to-drain etch recess spacing allows smaller high electron mobility transistors to be used for ancillary low speed applications on the IC, which reduces the chip area occupied by these ancillary transistors.

    摘要翻译: 具有高电子迁移率晶体管的集成电路(IC),例如增强模拟伪晶体高电子迁移率晶体管(E-pHEMT)以及用于制造IC的方法利用在一些高电子迁移率中增加的栅 - 漏蚀刻凹槽间距 晶体管提供片上静电放电保护。 使用增加的栅极到漏极蚀刻凹槽间隔允许较小的高电子迁移率晶体管用于IC上的辅助低速应用,这降低了这些辅助晶体管占用的芯片面积。

    Self-tuned matching network for high efficient power amplifiers
    6.
    发明授权
    Self-tuned matching network for high efficient power amplifiers 失效
    用于高效功率放大器的自调整匹配网络

    公开(公告)号:US06977562B2

    公开(公告)日:2005-12-20

    申请号:US10251273

    申请日:2002-09-19

    申请人: Chul Hong Park

    发明人: Chul Hong Park

    CPC分类号: H03H7/40 H01P5/04

    摘要: A passive interface circuit for coupling an output signal from a power amplifier to a load is disclosed. The interface presents an impedance to the power amplifier that increases as the power level in the output signal decreases. In one embodiment, the interface circuit includes a fixed network and a capacitor having a capacitance that varies with the potential across the capacitor. The fixed network couples the output signal to the load. The capacitor is connected in parallel with the load and has a capacitance that increases in response to an increase in potential across the capacitor. The capacitor is preferably a MEM capacitor having plates that move with respect to one another in response to changes in the average potential difference between the plates.

    摘要翻译: 公开了一种用于将功率放大器的输出信号耦合到负载的无源接口电路。 该接口提供了功率放大器的阻抗,随着输出信号中的功率电平的减小而增加。 在一个实施例中,接口电路包括固定网络和具有随电容器两端的电位而变化的电容的电容器。 固定网络将输出信号耦合到负载。 电容器与负载并联连接,并且具有随着电容器两端的电位增加而增加的电容。 电容器优选地是具有响应于板之间的平均电位差的变化而相对于彼此移动的板的MEM电容器。

    SYSTEM AND METHOD FOR SEARCHING FOR MUSICAL PIECES USING HARDWARE-BASED MUSIC SEARCH ENGINE
    7.
    发明申请
    SYSTEM AND METHOD FOR SEARCHING FOR MUSICAL PIECES USING HARDWARE-BASED MUSIC SEARCH ENGINE 审中-公开
    使用基于硬件的音乐搜索引擎搜索音乐片段的系统和方法

    公开(公告)号:US20100138404A1

    公开(公告)日:2010-06-03

    申请号:US12325394

    申请日:2008-12-01

    IPC分类号: G06F7/06 G06F17/30 G06F7/00

    摘要: A system and method for searching for musical pieces utilizes a hardware-based music search engine that includes a systolic array of comparison circuits to correlate musical query data for a desired musical piece with at least some of musical information data from a music database to determine potential musical pieces that are candidates for the desired musical piece.

    摘要翻译: 用于搜索音乐作品的系统和方法利用基于硬件的音乐搜索引擎,其包括比较电路的收缩阵列,以使所需音乐作品的音乐查询数据与来自音乐数据库的至少一些音乐信息数据相关联,以确定潜在的 作为所需乐曲的候选人的音乐作品。

    Temperature-compensated resistor and fabrication method therefor
    8.
    发明授权
    Temperature-compensated resistor and fabrication method therefor 有权
    温度补偿电阻及其制造方法

    公开(公告)号:US07253074B2

    公开(公告)日:2007-08-07

    申请号:US10982009

    申请日:2004-11-05

    申请人: Chul Hong Park

    发明人: Chul Hong Park

    IPC分类号: H01L21/20 H01C7/06

    摘要: A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration is formed, and is selected from an enlarged transverse portion in the resistor element intermediate and spaced from the terminal contacts, and at least one contact pattern along and in contact with the resistor element intermediate and spaced from the terminal contacts.

    摘要翻译: 提供了一种在半导体衬底上形成温度补偿电阻器的方法。 在半导体基板上形成电阻元件。 端子触点形成在电阻元件的端部上。 形成温度补偿结构,并且从中间并与端子触头隔开的电阻元件中的扩大横向部分中选择温度补偿结构,以及沿电阻元件中间并与端子触点间隔开的至少一个接触图案。

    Multi-chip memory devices and modules including independent control of memory chips
    9.
    发明授权
    Multi-chip memory devices and modules including independent control of memory chips 有权
    多芯片存储器件和模块,包括对存储器芯片的独立控制

    公开(公告)号:US06768660B2

    公开(公告)日:2004-07-27

    申请号:US09920062

    申请日:2001-08-01

    IPC分类号: G11C502

    摘要: Multi-chip memory devices include at least two integrated circuit memory chips, each of which includes corresponding address pads, data pads and control signal pads, and a common package that encapsulates the at least two integrated circuit memory chips, and that includes external terminals. An internal connection circuit in the common package is configured to connect at least one of the corresponding control signal pads of each of the integrated circuit memory chips to separate ones of the external terminals, to allow independent external control of each of the integrated circuit memory chips that are encapsulated in the common package. Multi-chip memory devices may be combined to form memory modules. The memory modules include a memory module substrate having first and second opposing surfaces. At least one multi-chip memory device, as described above, is provided on the first surface and on the second surface.

    摘要翻译: 多芯片存储器件包括至少两个集成电路存储器芯片,每个集成电路存储器芯片包括相应的地址焊盘,数据焊盘和控制信号焊盘,以及封装至少两个集成电路存储器芯片的公共封装,并且包括外部端子。 公共封装中的内部连接电路被配置为将每个集成电路存储器芯片的相应控制信号焊盘中的至少一个连接到单独的外部端子,以允许每个集成电路存储器芯片的独立外部控制 封装在公共包中。 多芯片存储器件可以组合以形成存储器模块。 存储器模块包括具有第一和第二相对表面的存储器模块衬底。 如上所述,至少一个多芯片存储器件设置在第一表面和第二表面上。

    Amplifier system having compensated amplification variation
    10.
    发明授权
    Amplifier system having compensated amplification variation 失效
    具有补偿放大变化的放大器系统

    公开(公告)号:US07292103B2

    公开(公告)日:2007-11-06

    申请号:US11107284

    申请日:2005-04-14

    IPC分类号: H03G3/10 H03G3/30

    摘要: An amplifier system is provided for amplifying an input signal to provide an amplified output signal, amplifying an amplified input signal to provide a further amplified output signal, and phase delay compensating variations of the amplifications of the amplified output signal and the further amplified output signal for providing the further amplified output signal with substantially linear amplification under a variable load.

    摘要翻译: 提供放大器系统,用于放大输入信号以提供放大的输出信号,放大放大的输入信号以提供进一步放大的输出信号,以及相位延迟补偿放大的输出信号的放大和进一步放大的输出信号的变化,以供 在可变负载下提供具有基本上线性放大的进一步放大的输出信号。