公开(公告)号：US06769629B2

公开(公告)日：2004-08-03

申请号：US10326745

申请日：2002-12-20

申请人： Chul Ju Hwang ,  Jong Man Park

发明人： Chul Ju Hwang ,  Jong Man Park

IPC分类号： B05B310

CPC分类号： C23C16/45544 ,  C23C16/45589 ,  F23D14/48 ,  F23D91/02

摘要： A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

摘要翻译： 气体喷射器包括主体，马达和斩波器。 主体以垂直延伸的圆筒形状安装在反应室上，并具有多个气体注入管和中心中空部分。 多个气体注入管穿过主体的底面，并且中央中空部分穿过主体的底部和顶面的每个中心。 马达具有插入中心中空部的旋转轴。 切割器形成为圆板形状并且在预定部分上具有凹口。 切断器与旋转轴的端部连接，并且通过旋转轴的旋转在主体的底面通过磁性密封紧密地附接到斩波器的状态下旋转。

公开(公告)号：US6124218A

公开(公告)日：2000-09-26

申请号：US916424

申请日：1997-08-22

申请人： Chul Ju Hwang

发明人： Chul Ju Hwang

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316

CPC分类号： H01L21/28211 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/31662 ,  H01L21/28167

摘要： A method for removing a native oxide and contaminants from a wafer surface at a relatively low temperature ranged from 100.degree. C. to 800.degree. C. uses H.sub.2 gas or hydrogen containing gas comprising ion sources chosen from impurity ions such as boron, phosphorus, arsenic, antimony, aluminum, and germanium activated by a plasma to be applied to the wafer surface in a vacuum furnace. A method for forming a thin oxide on a silicon wafer or substrate at a relatively low temperature ranged from 250.degree. C. to 800.degree. C. applies O.sub.2 or NO.sub.2 by using a plasma to the silicon wafer in a vacuum furnace.

摘要翻译： 在100℃至800℃的相对较低的温度下从晶片表面除去天然氧化物和污染物的方法使用包含选自杂质离子如硼，磷，砷的离子源的H 2气体或含氢气体 ，通过在真空炉中施加到晶片表面的等离子体活化的锑，铝和锗。 在250℃〜800℃的相对较低的温度下，在硅晶片或基板上形成薄氧化物的方法，在真空炉中通过使用等离子体对硅晶片施加O2或NO2。

公开(公告)号：US06524430B1

公开(公告)日：2003-02-25

申请号：US09667961

申请日：2000-09-21

申请人： Kyung Sik Shim ,  Chul Ju Hwang

发明人： Kyung Sik Shim ,  Chul Ju Hwang

IPC分类号： H01L2100

CPC分类号： H01J37/32862 ,  H01J37/32082 ,  H01J2237/186

摘要： An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor substrate; a substrate transport port for loading said semiconductor substrate into said reactor; and upper and lower plasma electrodes for generating plasma within said reaction region, said upper and lower plasma electrodes being disposed in the upper and lower portions of said reaction region in respect to said pedestal, respectively. The apparatus further comprise a slot valve plasma electrode within the substrate transport port, and the slot valve plasma electrode is connected to the lower plasma electrode via an RF wire. Also, the upper and lower plasma electrodes are connected to the same RF power supply. According to the present invention, the region lower than the pedestal and the substrate transport port are dry cleaned by plasma generated by the lower plasma electrode and the slot valve plasma electrode, so an additional wet cleaning is not required. Therefore, generation of undesired particles of the prior art can be prevented.

摘要翻译： 一种用于制造半导体器件的装置，包括：用于提供从外部分离的反应区域的反应器; 布置在所述反应器内以支撑半导体衬底的基座; 用于将所述半导体衬底加载到所述反应器中的衬底输送端口; 以及用于在所述反应区域内产生等离子体的上，下等离子体电极，所述上等离子体电极和下等离子体电极分别相对于所述基座设置在所述反应区域的上部和下部。 所述设备还包括在所述衬底输送端口内的槽阀等离子体电极，并且所述槽阀等离子体电极通过RF线连接到所述下等离子体电极。 此外，上等离子电极和下等离子体电极连接到相同的RF电源。 根据本发明，低于基座和基板输送口的区域被下部等离子体电极和狭槽阀等离子体电极产生的等离子体干洗，因此不需要额外的湿式清洗。 因此，可以防止现有技术的不想要的颗粒的产生。

公开(公告)号：US07391098B2

公开(公告)日：2008-06-24

申请号：US11297504

申请日：2005-12-07

申请人： Chul Ju Hwang

发明人： Chul Ju Hwang

IPC分类号： H01L29/12

CPC分类号： H01L29/1054 ,  H01L29/78 ,  H01L29/7843 ,  H01L29/7848

摘要： The present invention relates to a semiconductor substrate, a semiconductor device with high carrier mobility and a method of manufacturing the same. According to the present invention, there are provided a semiconductor substrate comprising a silicon substrate, a single crystal germanium layer formed on the silicon substrate, and a silicon layer formed on the single crystal germanium layer; a semiconductor device comprising a gate electrode formed on the semiconductor substrate, and junctions formed in the substrate at both sides of the gate electrode; and a method of manufacturing the semiconductor device. Therefore, carrier mobility of channels can be enhanced since the channels of semiconductor devices are placed within the germanium layer. Further, since the silicon layer is formed on the germanium layer, the reliable gate insulation film can be formed and a leakage current produced in a junction layer can also be reduced. Moreover, the same effect can be obtained without using an expensive germanium wafer. Accordingly, since conventional processes and equipment can be used as they are, highly efficient semiconductor devices can be fabricated without increase of a unit cost of production.

摘要翻译： 本发明涉及半导体衬底，具有高载流子迁移率的半导体器件及其制造方法。 根据本发明，提供了一种半导体衬底，包括硅衬底，形成在硅衬底上的单晶锗层和形成在单晶锗层上的硅层; 半导体器件，包括形成在半导体衬底上的栅电极和形成在栅电极两侧的衬底中的结; 以及半导体器件的制造方法。 因此，由于半导体器件的沟道被放置在锗层内，所以可以增强沟道的载流子迁移率。 此外，由于硅层形成在锗层上，所以可以形成可靠的栅极绝缘膜，并且还可以减少在接合层中产生的漏电流。 此外，可以在不使用昂贵的锗晶片的情况下获得相同的效果。 因此，由于可以直接使用常规的工艺和设备，所以可以在不增加单位生产成本的情况下制造高效的半导体器件。

公开(公告)号：US06656284B1

公开(公告)日：2003-12-02

申请号：US10187090

申请日：2002-06-28

申请人： Chul Ju Hwang ,  Kyung Sik Shim ,  Chang Soo Park

发明人： Chul Ju Hwang ,  Kyung Sik Shim ,  Chang Soo Park

IPC分类号： H01L2130

CPC分类号： C23C16/45574 ,  C23C16/45578 ,  C23C16/45589 ,  H01J37/3244 ,  Y10T428/24273

摘要： Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.

摘要翻译： 公开了一种半导体器件制造装置，其具有用于在反应室的上部供应源气体的旋转气体注入器。 根据本发明，源气体通过旋转式气体注入器从晶片的上侧注入，而未反应的气体被排出到晶片的下侧空间中，从而使薄膜的厚度均匀性降低，由于 传统技术中提供的源气体的水平流动显着减少。 因此，虽然多个晶片装载在单个反应室中，但是可以相对于所有的晶片沉积具有非常高的厚度均匀性的薄膜，从而能够提高生产率。

公开(公告)号：US08889470B2

公开(公告)日：2014-11-18

申请号：US12456121

申请日：2009-06-11

申请人： Jae Ho Kim ,  Chul Ju Hwang

发明人： Jae Ho Kim ,  Chul Ju Hwang

IPC分类号： H01L21/00 ,  H01L31/00 ,  H01L27/142 ,  H01L31/05

CPC分类号： H01L31/05 ,  H01L31/0463 ,  Y02E10/50

摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process. According to the present invention, there is no need to alternately load the substrate to the vacuum-deposition apparatus and the laser-scribing apparatus, whereby the apparatus structure is simple and the manufacturing time is decreased, thereby resulting in the improved yield.

摘要翻译： 公开了一种薄膜型太阳能电池及其制造方法，其特征在于，所述方法包括在基板上依次沉积前电极层和半导体层; 通过去除前电极层和半导体层的预定部分来形成第一分离通道; 通过去除所述半导体层的预定部分来形成接触部分和第二分离通道; 在所述第一分离通道中形成第一绝缘层; 并且通过插入其间的每个第二分隔通道以固定的间隔形成多个后电极，其中每个后电极通过接触部分与前电极层电连接。 本发明在进行激光划线处理之后仅需要一次清洁处理，由于简化的制造工艺，可以提高成品率。 根据本发明，不需要将基板交替地装载到真空沉积装置和激光划线装置，由此装置结构简单并且制造时间减少，从而提高产量。

公开(公告)号：US20090308436A1

公开(公告)日：2009-12-17

申请号：US12456121

申请日：2009-06-11

申请人： Jae Ho Kim ,  Chul Ju Hwang

发明人： Jae Ho Kim ,  Chul Ju Hwang

IPC分类号： H01L31/0224

CPC分类号： H01L31/05 ,  H01L31/0463 ,  Y02E10/50

摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process. According to the present invention, there is no need to alternately load the substrate to the vacuum-deposition apparatus and the laser-scribing apparatus, whereby the apparatus structure is simple and the manufacturing time is decreased, thereby resulting in the improved yield.

摘要翻译： 公开了一种薄膜型太阳能电池及其制造方法，其特征在于，所述方法包括在基板上依次沉积前电极层和半导体层; 通过去除前电极层和半导体层的预定部分来形成第一分离通道; 通过去除所述半导体层的预定部分来形成接触部分和第二分离通道; 在所述第一分离通道中形成第一绝缘层; 并且通过插入其间的每个第二分隔通道以固定的间隔形成多个后电极，其中每个后电极通过接触部分与前电极层电连接。 本发明在进行激光划线处理之后仅需要一次清洁处理，由于简化的制造工艺，可以提高成品率。 根据本发明，不需要将基板交替地装载到真空沉积装置和激光划线装置，由此装置结构简单并且制造时间减少，从而提高产量。

公开(公告)号：US06338995B1

公开(公告)日：2002-01-15

申请号：US09368210

申请日：1999-08-04

申请人： Chul Ju Hwang ,  Ki Bum Kim

发明人： Chul Ju Hwang ,  Ki Bum Kim

IPC分类号： H01L218242

CPC分类号： H01L21/3145 ,  H01L28/40

摘要： A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.

摘要翻译： 提供了一种高介电常数介电电容器及其制造方法。 电容器使用氮氧化钽膜作为高介电常数介电膜。 氧化钽膜通过化学气相沉积法使用钽乙醇盐气体作为钽源和氧气和氨气作为氮源来沉积。 氮氧化钽膜具有高电容率，高热稳定性和上下电极之间的低界面异质性。 因此，可以降低由于膜中的氧空位导致的电流泄漏。

公开(公告)号：US06530993B2

公开(公告)日：2003-03-11

申请号：US09793949

申请日：2001-02-27

申请人： Chul Ju Hwang ,  Sung Weon Lee

发明人： Chul Ju Hwang ,  Sung Weon Lee

IPC分类号： C23C1600

CPC分类号： H01L21/67167 ,  H01L21/67781 ,  Y10S414/135

摘要： A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them. Since it includes a fresh structure of wafer multiple-mounting unit, even though the plurality of process chambers of the cluster tool simultaneously proceed the fabrication process of a semiconductor device, the process bottle neck phenomenon as in the conventional art would not occur even though the wafer is delayed to be cooled. Consequently, the process time is shortened and thus the production cost of the semiconductor device can be reduced.

摘要翻译： 用于制造半导体器件的簇工具包括：具有晶片处理机器人的传送室; 与传送室的每个壁面相邻设置的多个处理室; 安装在传送室的不同壁面附近的装载室，其中盒被定位成带入和取出晶片; 以及冷却室，其安装在所述转移室的不同壁面的一侧，其间具有打开和关闭单元，所述冷却室设置有具有多个晶片安装板的晶片多重安装单元，所述晶片安装单元同时安装晶片 其完成在处理室中进行处理并冷却它们。 由于它包括晶片多重安装单元的新鲜结构，即使集群工具的多个处理室同时进行半导体器件的制造过程，也不会发生如传统技术中的工艺瓶颈现象，即使 晶片被延迟冷却。 因此，缩短了处理时间，可以降低半导体装置的制造成本。

公开(公告)号：US06435197B1

公开(公告)日：2002-08-20

申请号：US09794827

申请日：2001-02-27

申请人： Yong Woo Shin ,  Chul Ju Hwang

发明人： Yong Woo Shin ,  Chul Ju Hwang

IPC分类号： B08B600

摘要： An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified. In addition, since the density of the plasma can be easily controlled without increase or decrease of the RF electric power by transferring the susceptor 140 vertically, the inside of the reactive chamber 110 can be uniformly and effectively cleaned with the plasma.