公开(公告)号：US08889470B2

公开(公告)日：2014-11-18

申请号：US12456121

申请日：2009-06-11

申请人： Jae Ho Kim ,  Chul Ju Hwang

发明人： Jae Ho Kim ,  Chul Ju Hwang

IPC分类号： H01L21/00 ,  H01L31/00 ,  H01L27/142 ,  H01L31/05

CPC分类号： H01L31/05 ,  H01L31/0463 ,  Y02E10/50

摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process. According to the present invention, there is no need to alternately load the substrate to the vacuum-deposition apparatus and the laser-scribing apparatus, whereby the apparatus structure is simple and the manufacturing time is decreased, thereby resulting in the improved yield.

摘要翻译： 公开了一种薄膜型太阳能电池及其制造方法，其特征在于，所述方法包括在基板上依次沉积前电极层和半导体层; 通过去除前电极层和半导体层的预定部分来形成第一分离通道; 通过去除所述半导体层的预定部分来形成接触部分和第二分离通道; 在所述第一分离通道中形成第一绝缘层; 并且通过插入其间的每个第二分隔通道以固定的间隔形成多个后电极，其中每个后电极通过接触部分与前电极层电连接。 本发明在进行激光划线处理之后仅需要一次清洁处理，由于简化的制造工艺，可以提高成品率。 根据本发明，不需要将基板交替地装载到真空沉积装置和激光划线装置，由此装置结构简单并且制造时间减少，从而提高产量。

公开(公告)号：US20090308436A1

公开(公告)日：2009-12-17

申请号：US12456121

申请日：2009-06-11

申请人： Jae Ho Kim ,  Chul Ju Hwang

发明人： Jae Ho Kim ,  Chul Ju Hwang

IPC分类号： H01L31/0224

CPC分类号： H01L31/05 ,  H01L31/0463 ,  Y02E10/50

摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process. According to the present invention, there is no need to alternately load the substrate to the vacuum-deposition apparatus and the laser-scribing apparatus, whereby the apparatus structure is simple and the manufacturing time is decreased, thereby resulting in the improved yield.

摘要翻译： 公开了一种薄膜型太阳能电池及其制造方法，其特征在于，所述方法包括在基板上依次沉积前电极层和半导体层; 通过去除前电极层和半导体层的预定部分来形成第一分离通道; 通过去除所述半导体层的预定部分来形成接触部分和第二分离通道; 在所述第一分离通道中形成第一绝缘层; 并且通过插入其间的每个第二分隔通道以固定的间隔形成多个后电极，其中每个后电极通过接触部分与前电极层电连接。 本发明在进行激光划线处理之后仅需要一次清洁处理，由于简化的制造工艺，可以提高成品率。 根据本发明，不需要将基板交替地装载到真空沉积装置和激光划线装置，由此装置结构简单并且制造时间减少，从而提高产量。

公开(公告)号：US20050000453A1

公开(公告)日：2005-01-06

申请号：US10860534

申请日：2004-06-02

申请人： Chul-Ju Hwang ,  Sang-Gon Lee

发明人： Chul-Ju Hwang ,  Sang-Gon Lee

IPC分类号： H01L21/68 ,  H01L21/00 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68764 ,  H01L21/67103 ,  H01L21/68771

摘要： An apparatus for a semiconductor device includes: a chamber; a susceptor in the chamber; a plurality of heating-blocks on the susceptor; a lift pin assembly through the susceptor; a substrate holder over the susceptor, the substrate holder having a plurality of through holes corresponding to the plurality of heating-blocks; and a shaft combined with the substrate holder-through the susceptor.

摘要翻译： 一种半导体器件的装置，包括：腔室; 室内的一个感受器; 基座上的多个加热块; 提升销组件通过基座; 在所述基座上方的基板保持器，所述基板保持具有对应于所述多个加热块的多个通孔; 以及与基板支架结合的轴穿过基座。

公开(公告)号：US06769629B2

公开(公告)日：2004-08-03

申请号：US10326745

申请日：2002-12-20

申请人： Chul Ju Hwang ,  Jong Man Park

发明人： Chul Ju Hwang ,  Jong Man Park

IPC分类号： B05B310

CPC分类号： C23C16/45544 ,  C23C16/45589 ,  F23D14/48 ,  F23D91/02

摘要： A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

摘要翻译： 气体喷射器包括主体，马达和斩波器。 主体以垂直延伸的圆筒形状安装在反应室上，并具有多个气体注入管和中心中空部分。 多个气体注入管穿过主体的底面，并且中央中空部分穿过主体的底部和顶面的每个中心。 马达具有插入中心中空部的旋转轴。 切割器形成为圆板形状并且在预定部分上具有凹口。 切断器与旋转轴的端部连接，并且通过旋转轴的旋转在主体的底面通过磁性密封紧密地附接到斩波器的状态下旋转。

公开(公告)号：US06514837B2

公开(公告)日：2003-02-04

申请号：US09801518

申请日：2001-03-08

申请人： Young Suk Lee ,  Chul-Ju Hwang

发明人： Young Suk Lee ,  Chul-Ju Hwang

IPC分类号： H01L2136

CPC分类号： H01L21/02274 ,  C23C16/46 ,  C23C16/507 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/31625 ,  H01L21/76224

摘要： A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

摘要翻译： 高密度等离子体化学气相沉积装置包括：真空室，设有反应气体的入口和出口; 位于真空室内以将晶片安装在其上的可变元件，所述可动元件在其上表面具有晶片卡盘，以防止晶片水平移动; 围绕真空室的上外壁的线圈天线; 用于向线圈天线施加RF功率的RF发生器; 以及加热装置，用于加热安装在所述容器上的所述晶片。 由于晶片111由传统的HDP-CVD装置中没有提出的晶片加热单元预先加热，所以抑制了先前溅射的绝缘材料的再沉积。 因此，即使间隙具有高纵横比，也可以填补空隙。

公开(公告)号：US06338995B1

公开(公告)日：2002-01-15

申请号：US09368210

申请日：1999-08-04

申请人： Chul Ju Hwang ,  Ki Bum Kim

发明人： Chul Ju Hwang ,  Ki Bum Kim

IPC分类号： H01L218242

CPC分类号： H01L21/3145 ,  H01L28/40

摘要： A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.

摘要翻译： 提供了一种高介电常数介电电容器及其制造方法。 电容器使用氮氧化钽膜作为高介电常数介电膜。 氧化钽膜通过化学气相沉积法使用钽乙醇盐气体作为钽源和氧气和氨气作为氮源来沉积。 氮氧化钽膜具有高电容率，高热稳定性和上下电极之间的低界面异质性。 因此，可以降低由于膜中的氧空位导致的电流泄漏。

公开(公告)号：US06634314B2

公开(公告)日：2003-10-21

申请号：US09927004

申请日：2001-08-08

申请人： Chul-Ju Hwang ,  Kyung-Sik Shim

发明人： Chul-Ju Hwang ,  Kyung-Sik Shim

IPC分类号： C23C1600

CPC分类号： C23C16/45551 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/45589

摘要： The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate. In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a remaining vapor substance out of the reaction chamber.

摘要翻译： 本发明公开了一种ALD方法，其包括：将多个基板分别装载到多个反应池中，所述多个反应池设置在与外部条件隔离的反应室内; 交替地且重复地将各种蒸汽物质施加到每个基板上，使得在每个基板上形成薄膜，其中每个喷射一种蒸汽物质的多个蒸气喷射管周期性地扫描每个基板，以交替地和重复地将各种蒸气物质施加到 在另一方面，本发明公开了一种半导体器件制造装置，包括：多个基座，其上分别安装相同数量的基板; 反应室将多个基座上的所有基板与外部条件隔离; 多个蒸气喷射管，设置在所述基板上，每个蒸气喷射管相对于所述基板相对旋转并周期性地将蒸气物质施加到每个基板上; 多个排气部分，每个排放部分设置在相应的基座附近，以将剩余的蒸汽物质排出反应室。

公开(公告)号：US06565655B2

公开(公告)日：2003-05-20

申请号：US09803859

申请日：2001-03-12

申请人： Chul-Ju Hwang ,  Sung-Ryul Kim ,  Jae-Kyun Park

发明人： Chul-Ju Hwang ,  Sung-Ryul Kim ,  Jae-Kyun Park

IPC分类号： C30B2514

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/45593 ,  C30B25/14 ,  Y10T117/10

摘要： A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced. In addition, the gas outlet is installed at the portion where the reactive gas is satisfactorily cooled and condensed and the vacuum pump is connected with the gas outlet, so that the cooled and condensed contaminant generating source is quickly removed, and thus the defective proportion of the semiconductor device can be considerably reduced.

摘要翻译： 用于制造半导体器件的高真空装置包括设置有用于反应气体的入口和出口的反应室，安装在反应室中的用于将半导体安装在其上的阻塞器和与出口连接的真空泵， 所述反应室进入高真空状态，其中所述反应气体入口的气体喷射器被引导到所述半导体器件的下方，使得从所述反应气体入口喷射的反应气体的初始气体流不直接通过所述上部 的半导体衬底。 由于防止反应性气体在半导体衬底的上表面处冷却和冷凝，所以可以显着地减少半导体器件的不合格率。 此外，气体出口安装在反应气体被令人满意地冷却和冷凝的部分处，并且真空泵与气体出口连接，使得冷却和冷凝的污染物发生源被快速去除，因此，缺陷比例 可以大大减少半导体器件。

公开(公告)号：US06530993B2

公开(公告)日：2003-03-11

申请号：US09793949

申请日：2001-02-27

申请人： Chul Ju Hwang ,  Sung Weon Lee

发明人： Chul Ju Hwang ,  Sung Weon Lee

IPC分类号： C23C1600

CPC分类号： H01L21/67167 ,  H01L21/67781 ,  Y10S414/135

摘要： A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them. Since it includes a fresh structure of wafer multiple-mounting unit, even though the plurality of process chambers of the cluster tool simultaneously proceed the fabrication process of a semiconductor device, the process bottle neck phenomenon as in the conventional art would not occur even though the wafer is delayed to be cooled. Consequently, the process time is shortened and thus the production cost of the semiconductor device can be reduced.

摘要翻译： 用于制造半导体器件的簇工具包括：具有晶片处理机器人的传送室; 与传送室的每个壁面相邻设置的多个处理室; 安装在传送室的不同壁面附近的装载室，其中盒被定位成带入和取出晶片; 以及冷却室，其安装在所述转移室的不同壁面的一侧，其间具有打开和关闭单元，所述冷却室设置有具有多个晶片安装板的晶片多重安装单元，所述晶片安装单元同时安装晶片 其完成在处理室中进行处理并冷却它们。 由于它包括晶片多重安装单元的新鲜结构，即使集群工具的多个处理室同时进行半导体器件的制造过程，也不会发生如传统技术中的工艺瓶颈现象，即使 晶片被延迟冷却。 因此，缩短了处理时间，可以降低半导体装置的制造成本。

公开(公告)号：US06435197B1

公开(公告)日：2002-08-20

申请号：US09794827

申请日：2001-02-27

申请人： Yong Woo Shin ,  Chul Ju Hwang

发明人： Yong Woo Shin ,  Chul Ju Hwang

IPC分类号： B08B600

摘要： An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified. In addition, since the density of the plasma can be easily controlled without increase or decrease of the RF electric power by transferring the susceptor 140 vertically, the inside of the reactive chamber 110 can be uniformly and effectively cleaned with the plasma.