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1.发明申请公开(公告)号：US20100181283A1
公开(公告)日：2010-07-22
申请号：US12356968
申请日：2009-01-21
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
IPC分类号： B44C1/22
CPC分类号： H01L27/14636 , H01L24/82 , H01L27/14632 , H01L27/1464 , H01L27/14687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/10329 , H01L2924/10336 , H01L2924/14 , H01L2924/30105
摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.
摘要翻译： 公开了一种制造具有改进的接合能力的半导体器件的方法。 该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和 第二导电层。
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公开(公告)号：US20100184242A1
公开(公告)日：2010-07-22
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76 , H01L31/02 , H01L31/0224
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。
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3.发明授权公开(公告)号：US08293122B2
公开(公告)日：2012-10-23
申请号：US12356968
申请日：2009-01-21
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
IPC分类号： H01B13/00
CPC分类号： H01L27/14636 , H01L24/82 , H01L27/14632 , H01L27/1464 , H01L27/14687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/10329 , H01L2924/10336 , H01L2924/14 , H01L2924/30105
摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.
摘要翻译： 公开了一种制造具有改进的接合能力的半导体器件的方法。 该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和 第二导电层。
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公开(公告)号：US07968424B2
公开(公告)日：2011-06-28
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。
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公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。
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公开(公告)号：US08981510B2
公开(公告)日：2015-03-17
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。
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公开(公告)号：US20080303932A1
公开(公告)日：2008-12-11
申请号：US12120019
申请日：2008-05-13
申请人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
发明人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
IPC分类号： H04N5/335
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided is an image sensor device including a substrate with a pixel region and a peripheral region. A first isolation structure is formed on the substrate in the pixel region. The first isolation structure includes a trench having a first depth. A second isolation structure is formed on the substrate in the peripheral region. The second isolation structure includes a trench having a second depth. The first depth is greater than the second depth.
摘要翻译： 提供了一种包括具有像素区域和周边区域的基板的图像传感器装置。 在像素区域中的衬底上形成第一隔离结构。 第一隔离结构包括具有第一深度的沟槽。 在周边区域的基板上形成第二隔离结构。 第二隔离结构包括具有第二深度的沟槽。 第一个深度大于第二个深度。
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公开(公告)号：US08164124B2
公开(公告)日：2012-04-24
申请号：US11752012
申请日：2007-05-22
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H01L27/14812
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
摘要翻译： 本公开提供了一种图像传感器半导体器件。 半导体器件包括半导体衬底; 第一外延半导体层，其设置在所述半导体衬底上并且具有第一类型的掺杂剂和第一掺杂浓度; 第二外延半导体层，设置在所述第一外延半导体层上并且具有所述第一类型的掺杂物和小于所述第一掺杂浓度的第二掺杂浓度; 以及第二外延半导体层上的图像传感器。
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公开(公告)号：US20080246063A1
公开(公告)日：2008-10-09
申请号：US11752012
申请日：2007-05-22
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/113 , H01L31/0232
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H01L27/14812
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
摘要翻译： 本公开提供了一种图像传感器半导体器件。 半导体器件包括半导体衬底; 第一外延半导体层，其设置在所述半导体衬底上并且具有第一类型的掺杂剂和第一掺杂浓度; 第二外延半导体层，设置在所述第一外延半导体层上并且具有所述第一类型的掺杂物和小于所述第一掺杂浓度的第二掺杂浓度; 以及第二外延半导体层上的图像传感器。
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公开(公告)号：US08816457B2
公开(公告)日：2014-08-26
申请号：US13549792
申请日：2012-07-16
IPC分类号： H04N5/225
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.
摘要翻译： 本公开提供了图像传感器装置的各种实施例。 示例性图像传感器装置包括设置在基板中的图像感测区域; 布置在所述基板上的多层互连结构; 以及形成在多层互连结构中并与图像感测区域对准的滤色器。 滤色片具有长度和宽度，其长度大于宽度。
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